OptiMOSTM-T2 Power-Transistor
Features • N-channel Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C pea...
OptiMOSTM-T2 Power-
Transistor
Features N-channel Logic Level - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow Green product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)
IPC60N04S4L-06
Product Summary VDS RDS(on) ID
40 V 5.6 m 60 A
PG-TDSON-8-23
1 1
Type IPC60N04S4L-06
Package PG-TDSON-8-23
Marking 4N04L06
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
Pulsed drain current2) Avalanche energy, single pulse Avalanche current, single pulse Gate source voltage
ID
I D,pulse E AS I AS V GS
T C=25°C, T J =175°C, V GS=10V
T C=100 °C, T J =175°C, V GS=10 V
T C=25 °C
I D=30 A
-
-
Power dissipation
P tot
T C=25 °C, T J =175°C
Operating and storage temperature T j, T stg -
Value 601)
Unit A
581, 2)
240 120 60 ±16
63 -55 ... +1753)
mJ A V
W
°C
Rev. 1.0
page 1
2015-05-22
IPC60N04S4L-06
Parameter
Symbol
Conditions
Thermal characteristics Thermal resistance, junction - case R thJC -
min.
Values typ.
Unit max.
- - 2.4 K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
40
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D= 30µA 1.2 1.7 2.2
Zero gate voltage drain current
I DSS
V DS=40 V, V GS=0 V, T j=25 °C
-
0.01
1 µA
Gate-source leakage current Drain-source on-state resistance
V DS=18 V, V GS=0 V, T j=85 °C...
