MBR6060R

Silicon Power Schottky Diode Features High Surge Capability Types from 45 V to 100 V VRRM Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. MBR6045 thru MBR60100R VRRM = 45 V - 100 V IF = 60 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR6045 (R) MBR6060 (R) MBR6080 (R) MBR60100 (R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 100 °C TC = 25 °C, tp = 8.3 ms 45 32 45 60 700 -55 to 150 -55 to 150 60 42 60 60 700 -55 to 150 -55 to 150 80 50 80 60 700 -55 to 150 -55 to 150 100 70 100 60 700 -55 to 150 -55 to 150 V V V A A °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MBR6045 (R) MBR6060(R) MBR6080 (R) MBR60100 (R) Unit Diode forward voltage Reverse current Thermal characteristics Thermal resistance, junction case VF IF = 60 A, Tj = 25 °C IR VR = 20 V, Tj = 25 °C VR = 20 V, Tj = 125 °C RthJC 0.65 5 150 1.0 0.75 5 150 1.0 0.84 5 150 1.0 0.84 V 5 150 mA 1.0 °C/W www.genesicsemi.com/silicon-products/schottky-rectifiers/ 1 MBR6045 thru MBR60100R www.genesicsemi.com/silicon-products/schottky-rectifiers/ 2 MBR6045 thru MBR60100R Package dime...