GaAs Monolithic Microwave
CHA3514
RoHS COMPLIANT
6-18GHz 4 bit Digital Variable Amplifier
GaAs Monolithic Microwave IC
Description
The CHA3514 is...
Description
CHA3514
RoHS COMPLIANT
6-18GHz 4 bit Digital Variable Amplifier
GaAs Monolithic Microwave IC
Description
The CHA3514 is composed by a two stage travelling wave amplifier followed by a four steps digital attenuator. It is designed for defense applications. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process.
The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is available in chip form.
Main Features
■ Performances: 6-18GHz ■ 19dBm saturated output power ■ 13 dB gain ■ 4bit attenuator for 39.5dB dynamic range ■ DC power consumption, 190mA @ 4.5V ■ Chip size: 5.54 x 2.30 x 0.1mm
Typical on wafer Measurements Gain versus attenuation states
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Min Typ Max Unit
Fop Operating frequency range 6
18 GHz
G Small signal gain @ Attenuator state 0dB
13 dB
Psat
Saturated Output power @ Attenuator state 0dB
19
dBm
ATT dyn
Attenuator range with 4bit
39.5 dB
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. DSCHA3514-8144 - 23 May 08
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3514
6-18GHz Digital Variable Amplifier
Electrical Characteristics on wafer
Tamb = +25°C V...
Similar Datasheet