CHA3689-99F

CHA3689-99F RoHS COMPLIANT 12.5-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA3689-99F is a three-stage self biased wide band monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Vd1 RFin Vd2 B Main Features Vd3 RFout D ■ Broadband performance: 12.5-30GHz ■ 2.0dB noise figure ■ 26dB gain (12.5-26GHz) ■ 26dBm output IP3 (18-30GHz) ■ Low DC power consumption ■ DC bias: Vd=4 Volt @ Id= 90 /120mA ■ Chip size : 2.45 x 1.21 x 0.1mm Gain NF On wafer typical measurements @ 120mA Main Characteristics Tamb = +25°C, Vd1=Vd2=Vd3 = +4V Pads B, D = GND (High current configuration) Symbol Parameter Min Typ Max Freq Frequency range 12.5 30 Gain Linear Gain 26 NF Noise Figure 2 2.6 Pout1dB Output Power @1dB comp. 14 15 Unit GHz dB dB dBm Ref. : DSCHA36891035 - 07 Feb 11 1/16 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - BP46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHA3689-99F 12.5-30GHz Low Noise Amplifier Main Characteristics (low current configuration) Tamb = +25°C, Vd1=Vd2=Vd3= +4V Pads B, D = not connected Symbol Parameter Min Typ Max Unit Freq Frequency range...