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Monolithic Microwave. CHA5356-QGG Datasheet

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Monolithic Microwave. CHA5356-QGG Datasheet






CHA5356-QGG Microwave. Datasheet pdf. Equivalent




CHA5356-QGG Microwave. Datasheet pdf. Equivalent





Part

CHA5356-QGG

Description

GaAs Monolithic Microwave



Feature


CHA5356-QGG UMS A366878A YYWWG 17.7-23 .6GHz Packaged HPA GaAs Monolithic Micr owave IC in SMD leadless package Descr iption The CHA5356-QGG is a three stage monolithic GaAs high power amplifier, which integrates a power detector. It i s designed for a wide range of applicat ions, from military to commercial commu nication systems. The circuit is manufa ctured with a pHEM.
Manufacture

United Monolithic Semiconductors

Datasheet
Download CHA5356-QGG Datasheet


United Monolithic Semiconductors CHA5356-QGG

CHA5356-QGG; T process, 0.15µm gate length. It is su pplied in RoHS compliant SMD package. UUMUMSMSS AAA3536356866687878AA YYYYWYW WWWWGG SMU A786863A GWWYY Outpu t power (dBm) UMS A368687A YYWWG Main Features ■ Broadband performances: 1 7.7-23.6GHz 35 Saturated power ■ 3 3dBm Pout in saturation UMS■38dBmOIP 3 ■ 19dB Gain ■ 30dB power detectio n dynamic ■ DC bias: Vd=6.0Volt@I.


United Monolithic Semiconductors CHA5356-QGG

d=700mA ■ QGG-QFN5x5 ■ MSL3 34 33 32 31 30 -40 °C 25 °C 85 °C 2 9 28 17 18 19 20 21 22 23 24 Frequency (GHz) Main Electrical Characteristics Tamb.= +25°C Symbol Freq Gain Psat OIP3 Parameter Frequency range Linear Gain Saturated Output Power Output IP3 A3687ARef.:DSCHA5356-QGG4273-30Sep14 1/16 Min Typ Max Unit 17.7 23.6 GHz 19 dB 33 dBm 38 dBm Sp.


United Monolithic Semiconductors CHA5356-QGG

ecifications subject to change without n otice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON -SUR-YVETTE - France Tel.: +33 (0) 1 6 9 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA5356-QGG 17.7-23.6GHz Packaged HP A Electrical Characteristics Tamb.= + 25°C, Vd = +6.0V Symbol Parameter M in Typ Freq Operati.

Part

CHA5356-QGG

Description

GaAs Monolithic Microwave



Feature


CHA5356-QGG UMS A366878A YYWWG 17.7-23 .6GHz Packaged HPA GaAs Monolithic Micr owave IC in SMD leadless package Descr iption The CHA5356-QGG is a three stage monolithic GaAs high power amplifier, which integrates a power detector. It i s designed for a wide range of applicat ions, from military to commercial commu nication systems. The circuit is manufa ctured with a pHEM.
Manufacture

United Monolithic Semiconductors

Datasheet
Download CHA5356-QGG Datasheet




 CHA5356-QGG
CHA5356-QGG
17.7-23.6GHz Packaged HPA
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA5356-QGG is a three stage
monolithic GaAs high power amplifier, which
integrates a power detector.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.15µm gate length.
It is supplied in RoHS compliant SMD
package.
UUMUMSMSS
AAA3536356866687878AA
YYYYWYWWWWWGG
SMU
A786863A
GWWYY
Main Features
Broadband performances: 17.7-23.6GHz
35
Saturated power
33dBm Pout in saturation
UMS38dBmOIP3
19dB Gain
30dB power detection dynamic
DC bias: Vd=6.0Volt@Id=700mA
QGG-QFN5x5
MSL3
34
33
32
31
30
-40 °C
25 °C
85 °C
29
28
17 18 19 20 21 22 23 24
Frequency (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Freq
Gain
Psat
OIP3
Parameter
Frequency range
Linear Gain
Saturated Output Power
Output IP3
A3687ARef.:DSCHA5356-QGG4273-30Sep14
1/16
Min Typ Max Unit
17.7
23.6 GHz
19 dB
33 dBm
38 dBm
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34




 CHA5356-QGG
CHA5356-QGG
17.7-23.6GHz Packaged HPA
Electrical Characteristics
Tamb.= +25°C, Vd = +6.0V
Symbol
Parameter
Min Typ
Freq
Operating frequency range
17.7
G Small Signal Gain
ΔG Gain variation in temperature
19
0.045
Psat
Saturated output power in 17.7- 19.7GHz
Saturated output power in 21.2- 23.6GHz
33
31.5
P1dB Output power @1dB compression
31
OIP3
Output IP3 in 17.7- 19.7GHz
Output IP3 in 21.2- 23.6GHz
38
36
PAE
PAE at 1dB compression
20
Rlin Input Return Loss
12
Rlout Output Return Loss
15
NF Noise Figure
Dr Detection dynamic range (1)
7.5
30
Vdet_min Voltage detection Vref-Vdet min
10
Vdet_max Voltage detection Vref-Vdet up to Psat
2100
Vg DC Gate voltage
-0.75
Idet Detector current
3.0
Idq Total drain current
(1) Detection dynamic range for output power detection up to Psat.
700
These values are representative of on-board measurements.
Electrostatic discharge sensitive device observe handling precautions!
Max
23.6
Unit
GHz
dB
dB/°C
dBm
dBm
dBm
%
dB
dB
dB
dB
mV
mV
V
mA
mA
Ref. : DSCHA5356-QGG4273- 30 Sep 14
2/16 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34




 CHA5356-QGG
17.7-23.6GHz Packaged HPA
CHA5356-QGG
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vd Drain bias voltage
6.5V
V
Id Drain bias quiescent current
900 mA
Vg Gate bias voltage
Pin Maximum peak input power overdrive (2)
-2 to +0.4
+20
V
dBm
Tj Junction temperature
175 °C
Ta Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +150
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
(2) Duration < 1s.
Typical Bias Conditions
Tamb.= +25°C
Symbol Pad No
Vd1 28
Vd2 26
Vd3 24, 12
Vg1 9
Vg2 10
Vg3 25, 11
VDC
22
Parameter
DC Drain voltage 1st stage
DC Drain voltage 2nd stage
DC Drain voltage 3rd stage
DC Gate voltage 1st stage
DC Gate voltage 2nd stage
DC Gate voltage 3rd stage
DC Detector voltage
Values
6.0
6.0
6.0
-0.75
-0.75
-0.75
6.0
Unit
V
V
V
V
V
V
V
Ref. : DSCHA5356-QGG4273- 30 Sep 14
3/16 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34



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