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CHA6005-99F Dataheets PDF



Part Number CHA6005-99F
Manufacturers United Monolithic Semiconductors
Logo United Monolithic Semiconductors
Description GaAs Monolithic Microwave
Datasheet CHA6005-99F DatasheetCHA6005-99F Datasheet (PDF)

CHA6005-99F Linear Gain (dB) & Pout @ ~ 3dBcomp Idrain @ ~ 3dBcomp (mA) 8-12GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6005-99F is a high power amplifier monolithic circuit, which integrates two stages and produces 32.5dBm output power associated to a high power added efficiency of 38%. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes.

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CHA6005-99F Linear Gain (dB) & Pout @ ~ 3dBcomp Idrain @ ~ 3dBcomp (mA) 8-12GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6005-99F is a high power amplifier monolithic circuit, which integrates two stages and produces 32.5dBm output power associated to a high power added efficiency of 38%. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features ■ High power : 32.5dBm ■ High PAE : 38% ■ Frequency band : 8-12GHz ■ Linear gain : 22dB ■ DC bias: Vd=8Volt@Id=350mA ■ Chip size 3x1.5x0.1mm 34 600 32 550 30 500 28 450 Linear Gain (dB) 26 Pout @ Pin=14 dBm (3dBcomp) 400 Idrain @ Pin=14 dBm (3dBcomp) 24 350 22 300 20 250 18 200 8 8.5 9 9.5 10 10.5 11 11.5 12 Freq (GHz) Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range G Linear Gain P1dB Output Power @ 3dB comp. PAE Power Added Efficiency @ 3dB comp. Min Typ Max Unit 8 12 GHz 22 dB 31.5 dBm 38 % Ref. : DSCHA60052244 - 31 Aug 12 1/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA6005-99F 8-12GHz High Power Amplifier Electrical Characteristics Tamb.= +25°C, Vd = +8V Symbol Parameter Min Typ Max Unit Freq Operating frequency 8 12 GHz G Small signal gain 22 dB dBS11 Input Return Loss 13 dB dBS22 Output Return Loss 10 dB P1dB Output power @ 1dBcomp 31.5 dBm P3dB Output power @ 3dBcomp 32.5 dBm PAE Power Added Efficiency @ 3dBcomp 39 % Id_3dBc Supply drain current @ 3dBcomp 500 mA Vd1, 2 Drain supply voltage 8V Id Supply quiescent current 350 mA Vg Gate supply voltage -1 V These values are representative of on-wafer measurements that are made without bonding wires at the RF ports. A bonding wire of typically 0.25 to 0.3nH will improve the matching at the accesses. Ref. : DSCHA60052244 - 31 Aug 12 2/10 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 8-12GHz High Power Amplifier CHA6005-99F Absolute Maximum Ratings (1) Tamb.= +25°C Symbol Parameter Values Unit Vd Drain bias voltage 9.0 V Id Drain bias current 550 mA Vg Gate bias voltage Pin Maximum peak input power overdrive (2) -0.6 V +20 dBm Tj Junction temperature 175 °C Ta Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +150 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Typical Bias Conditions Tamb.= +25°C Symbol Pad No V1 V1 V2 V2 Parameter Drain supply voltage Gaye supply voltage Values 8 -1 Unit V V Ref. : DSCHA60052244 - 31 Aug 12 3/10 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA6005-99F 8-12GHz High Power Amplifier Typical on-wafer Sij parameters Tamb.= +25°C, Vd = +8V, Id = 350mA Freq (GHz) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 S11 (dB) -0.13 -0.41 -0.91 -1.58 -2.38 -2.84 -3.31 -3.93 -4.31 -4.83 -5.46 -6.62 -8.19 -9.90 -11.75 -14.25 -22.50 -19.68 -11.97 -9.48 -9.03 -8.28 -7.24 -6.28 -4.14 -2.77 -2.03 -1.55 -1.57 -1.81 -1.92 -2.40 -1.78 -2.71 -4.54 PhS11 (°) -24.56 -36.99 -49.02 -59.45 -68.02 -74.73 -82.38 -90.68 -97.82 -106.35 -116.08 -124.18 -132.30 -137.14 -139.76 -147.90 -149.89 -36.57 -46.88 -66.85 -76.06 -75.50 -77.36 -73.12 -77.38 -86.29 -97.24 -108.80 -118.06 -127.31 -138.32 -143.30 -155.35 -171.55 169.63 S12 (dB) -41.65 -73.73 -69.95 -63.20 -56.66 -63.04 -57.85 -60.34 -60.03 -50.57 -70.50 -55.54 -53.46 -55.00 -57.16 -51.44 -61.08 -61.46 -49.78 -54.09 -45.08 -45.12 -46.53 -50.56 -45.11 -40.75 -43.07 -46.25 -61.73 -40.65 -51.69 -37.13 -53.00 -30.56 -37.57 PhS12 (°) 94.28 -169.07 74.68 3.88 157.15 94.69 -114.80 158.64 24.56 -80.01 131.94 -157.24 -7.29 -29.83 -149.65 49.02 68.48 37.28 -37.51 43.84 -123.49 -167.53 178.36 143.28 -73.10 -41.28 39.37 -168.74 -65.61 56.06 -38.56 17.09 -31.01 -18.51 -134.74 S21 (dB) -41.00 -33.87 -23.74 -18.60 -10.90 -6.27 -3.73 -1.35 1.15 4.11 7.63 11.36 15.47 19.90 22.91 23.09 22.44 22.18 22.25 22.31 22.21 22.20 21.59 17.68 10.97 3.20 -4.83 -12.75 -20.85 -28.30 -36.54 -40.98 -52.02 -34.16 -41.04 PhS21 (°) 5.33 124.41 83.31 78.66 48.69 4.33 -33.50 -66.01 -94.43 -123.24 -154.66 170.68 129.40 79.16 14.32 -50.26 -104.62 -154.83 154.10 99.85 43.81 -18.84 -93.01 -177.82 108.88 49.97 -0.77 -42.90 -80..


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