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Monolithic Microwave. CHA6005-99F Datasheet

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Monolithic Microwave. CHA6005-99F Datasheet






CHA6005-99F Microwave. Datasheet pdf. Equivalent




CHA6005-99F Microwave. Datasheet pdf. Equivalent





Part

CHA6005-99F

Description

GaAs Monolithic Microwave



Feature


CHA6005-99F Linear Gain (dB) & Pout @ ~ 3dBcomp Idrain @ ~ 3dBcomp (mA) 8-12G Hz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6005- 99F is a high power amplifier monolithi c circuit, which integrates two stages and produces 32.5dBm output power assoc iated to a high power added efficiency of 38%. It is designed for a wide range of applications, .
Manufacture

United Monolithic Semiconductors

Datasheet
Download CHA6005-99F Datasheet


United Monolithic Semiconductors CHA6005-99F

CHA6005-99F; from military to commercial communicatio n systems. The circuit is manufactured with a pHEMT process, 0.25µm gate leng th, via holes through the substrate, ai r bridges and electron beam gate lithog raphy. It is available in chip form. M ain Features ■ High power : 32.5dBm High PAE : 38% ■ Frequency band : 8-12GHz ■ Linear gain : 22dB ■ DC b ias: Vd=8Volt@Id=350mA ■ Chip.


United Monolithic Semiconductors CHA6005-99F

size 3x1.5x0.1mm 34 600 32 550 30 50 0 28 450 Linear Gain (dB) 26 Pout @ Pin=14 dBm (3dBcomp) 400 Idrain @ Pi n=14 dBm (3dBcomp) 24 350 22 300 20 250 18 200 8 8.5 9 9.5 10 10.5 11 11.5 12 Freq (GHz) Main Electrical Charact eristics Tamb.= +25°C Symbol Parame ter Freq Frequency range G Linear Gai n P1dB Output Power @ 3dB comp. PAE P ower Added Efficien.


United Monolithic Semiconductors CHA6005-99F

cy @ 3dB comp. Min Typ Max Unit 8 12 GH z 22 dB 31.5 dBm 38 % Ref. : DSCHA6005 2244 - 31 Aug 12 1/10 Specifications s ubject to change without notice United Monolithic Semiconductors S.A.S. Bât . Charmille - Parc SILIC - 10, Avenue d u Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA6005-99F 8-12GHz High Power.

Part

CHA6005-99F

Description

GaAs Monolithic Microwave



Feature


CHA6005-99F Linear Gain (dB) & Pout @ ~ 3dBcomp Idrain @ ~ 3dBcomp (mA) 8-12G Hz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6005- 99F is a high power amplifier monolithi c circuit, which integrates two stages and produces 32.5dBm output power assoc iated to a high power added efficiency of 38%. It is designed for a wide range of applications, .
Manufacture

United Monolithic Semiconductors

Datasheet
Download CHA6005-99F Datasheet




 CHA6005-99F
CHA6005-99F
8-12GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA6005-99F is a high power amplifier
monolithic circuit, which integrates two
stages and produces 32.5dBm output power
associated to a high power added efficiency
of 38%.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
Main Features
High power : 32.5dBm
High PAE : 38%
Frequency band : 8-12GHz
Linear gain : 22dB
DC bias: Vd=8Volt@Id=350mA
Chip size 3x1.5x0.1mm
34 600
32 550
30 500
28 450
Linear Gain (dB)
26
Pout @ Pin=14 dBm (3dBcomp)
400
Idrain @ Pin=14 dBm (3dBcomp)
24 350
22 300
20 250
18 200
8 8.5 9 9.5 10 10.5 11 11.5 12
Freq (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
G Linear Gain
P1dB Output Power @ 3dB comp.
PAE Power Added Efficiency @ 3dB comp.
Min Typ Max Unit
8 12 GHz
22 dB
31.5 dBm
38 %
Ref. : DSCHA60052244 - 31 Aug 12
1/10 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34




 CHA6005-99F
CHA6005-99F
8-12GHz High Power Amplifier
Electrical Characteristics
Tamb.= +25°C, Vd = +8V
Symbol
Parameter
Min Typ Max Unit
Freq Operating frequency
8 12 GHz
G Small signal gain
22 dB
dBS11 Input Return Loss
13 dB
dBS22 Output Return Loss
10 dB
P1dB Output power @ 1dBcomp
31.5 dBm
P3dB Output power @ 3dBcomp
32.5 dBm
PAE Power Added Efficiency @ 3dBcomp
39 %
Id_3dBc Supply drain current @ 3dBcomp
500 mA
Vd1, 2 Drain supply voltage
8V
Id Supply quiescent current
350 mA
Vg Gate supply voltage
-1 V
These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
A bonding wire of typically 0.25 to 0.3nH will improve the matching at the accesses.
Ref. : DSCHA60052244 - 31 Aug 12
2/10 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34




 CHA6005-99F
8-12GHz High Power Amplifier
CHA6005-99F
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vd Drain bias voltage
9.0 V
Id Drain bias current
550 mA
Vg Gate bias voltage
Pin Maximum peak input power overdrive (2)
-0.6 V
+20 dBm
Tj Junction temperature
175 °C
Ta Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +150
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Typical Bias Conditions
Tamb.= +25°C
Symbol Pad No
V1 V1
V2 V2
Parameter
Drain supply voltage
Gaye supply voltage
Values
8
-1
Unit
V
V
Ref. : DSCHA60052244 - 31 Aug 12
3/10 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34



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