GaAs Monolithic Microwave
CHA7115-99F
RoHS COMPLIANT
X-band High Power Amplifier
GaAs Monolithic Microwave IC
Description
Vg3 Vd3
The CHA7115 i...
Description
CHA7115-99F
RoHS COMPLIANT
X-band High Power Amplifier
GaAs Monolithic Microwave IC
Description
Vg3 Vd3
The CHA7115 is a monolithic three-stage
GaAs high power amplifier designed for X-band applications.
Vg2 Vd2 Vg1
The HPA provides typically 8W output power associated to 36% power added efficiency at IN
OUT
4dBcomp and a high robustness on
mismatch load.
Vd1 Vd2
This device is manufactured using 0.25µm
Power pHEMT process, including, via holes
through the substrate and air bridges.
Vg3 Vd3
It is available in chip form.
Main Features
0.25µm Power pHEMT Technology Frequency band: 8.5 – 11.5GHz Output power : 39dBm @ 4dBcomp High linear gain: > 27dB High PAE : 37% @ 4dBcomp Quiescent bias point: Vd=8V, Id=2.2A Chip size: 4.59 x 3.31 x 0.07mm
Pout (dBm) & PAE (%) & Gain (dB)
44 42 40 Pout @ 4dBc 38 36 34 32 PAE @ 4dBc 30 28 26 24 Pulse : 25µs 10% 22
8 8.5 9 9.5 10 10.5 Frequency (GHz)
Linear Gain 11 11.5
12
Main Characteristics
Vd = 8V, Id (Quiescent) = 2.2A, Drain Pulse width = 25µs, Duty cycle = 10%
Symbol
Parameter
Min Typ
Fop Operating frequency range
8.5
PAE_4dB Power added efficiency @4dBcomp @ 20°C
37
P_4dB Output power @ 4dBcomp @ 20°C
39
G Small signal gain @ 20°C
27.5
Max 11.5
Unit GHz
% dBm dB
ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions!
Ref : DSCHA71151069 - 10 Mar 11
1/6 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
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