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Monolithic Microwave. CHA7115-99F Datasheet

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Monolithic Microwave. CHA7115-99F Datasheet






CHA7115-99F Microwave. Datasheet pdf. Equivalent




CHA7115-99F Microwave. Datasheet pdf. Equivalent





Part

CHA7115-99F

Description

GaAs Monolithic Microwave



Feature


CHA7115-99F RoHS COMPLIANT X-band High P ower Amplifier GaAs Monolithic Microwav e IC Description Vg3 Vd3 The CHA7115 is a monolithic three-stage GaAs high power amplifier designed for X-band ap plications. Vg2 Vd2 Vg1 The HPA provi des typically 8W output power associate d to 36% power added efficiency at IN OUT 4dBcomp and a high robustness on mismatch load. Vd.
Manufacture

United Monolithic Semiconductors

Datasheet
Download CHA7115-99F Datasheet


United Monolithic Semiconductors CHA7115-99F

CHA7115-99F; 1 Vd2 This device is manufactured using 0.25µm Power pHEMT process, includin g, via holes through the substrate and air bridges. Vg3 Vd3 It is available in chip form. Main Features  0.25 m Power pHEMT Technology  Frequency band: 8.5 – 11.5GHz  Output power : 39dBm @ 4dBcomp  High linear gain : > 27dB  High PAE : 37% @ 4dBcomp Quiescent bias point: Vd=8V, Id.


United Monolithic Semiconductors CHA7115-99F

=2.2A  Chip size: 4.59 x 3.31 x 0.07m m Pout (dBm) & PAE (%) & Gain (dB) 44 42 40 Pout @ 4dBc 38 36 34 32 PAE @ 4d Bc 30 28 26 24 Pulse : 25µs 10% 22 8 8 .5 9 9.5 10 10.5 Frequency (GHz) Linea r Gain 11 11.5 12 Main Characteristic s Vd = 8V, Id (Quiescent) = 2.2A, Drai n Pulse width = 25µs, Duty cycle = 10% Symbol Parameter Min Typ Fop Opera ting frequency range .


United Monolithic Semiconductors CHA7115-99F

8.5 PAE_4dB Power added efficiency @4dB comp @ 20°C 37 P_4dB Output power @ 4dBcomp @ 20°C 39 G Small signal gai n @ 20°C 27.5 Max 11.5 Unit GHz % d Bm dB ESD Protections: Electrostatic d ischarge sensitive device. Observe hand ling precautions! Ref : DSCHA71151069 - 10 Mar 11 1/6 Specifications subject to change without notice United Monol ithic Semiconductors .

Part

CHA7115-99F

Description

GaAs Monolithic Microwave



Feature


CHA7115-99F RoHS COMPLIANT X-band High P ower Amplifier GaAs Monolithic Microwav e IC Description Vg3 Vd3 The CHA7115 is a monolithic three-stage GaAs high power amplifier designed for X-band ap plications. Vg2 Vd2 Vg1 The HPA provi des typically 8W output power associate d to 36% power added efficiency at IN OUT 4dBcomp and a high robustness on mismatch load. Vd.
Manufacture

United Monolithic Semiconductors

Datasheet
Download CHA7115-99F Datasheet




 CHA7115-99F
CHA7115-99F
RoHS COMPLIANT
X-band High Power Amplifier
GaAs Monolithic Microwave IC
Description
Vg3 Vd3
The CHA7115 is a monolithic three-stage
GaAs high power amplifier designed for
X-band applications.
Vg2 Vd2
Vg1
The HPA provides typically 8W output power
associated to 36% power added efficiency at IN
OUT
4dBcomp and a high robustness on
mismatch load.
Vd1 Vd2
This device is manufactured using 0.25µm
Power pHEMT process, including, via holes
through the substrate and air bridges.
Vg3 Vd3
It is available in chip form.
Main Features
0.25µm Power pHEMT Technology
Frequency band: 8.5 11.5GHz
Output power : 39dBm @ 4dBcomp
High linear gain: > 27dB
High PAE : 37% @ 4dBcomp
Quiescent bias point: Vd=8V, Id=2.2A
Chip size: 4.59 x 3.31 x 0.07mm
44
42
40 Pout @ 4dBc
38
36
34
32 PAE @ 4dBc
30
28
26
24 Pulse : 25µs 10%
22
8 8.5 9 9.5 10 10.5
Frequency (GHz)
Linear Gain
11 11.5
12
Main Characteristics
Vd = 8V, Id (Quiescent) = 2.2A, Drain Pulse width = 25µs, Duty cycle = 10%
Symbol
Parameter
Min Typ
Fop Operating frequency range
8.5
PAE_4dB Power added efficiency @4dBcomp @ 20°C
37
P_4dB Output power @ 4dBcomp @ 20°C
39
G Small signal gain @ 20°C
27.5
Max
11.5
Unit
GHz
%
dBm
dB
ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions!
Ref : DSCHA71151069 - 10 Mar 11
1/6 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09




 CHA7115-99F
CHA7115-99F
X-band High Power Amplifier
Electrical Characteristics on wafer
Tamb = 20°C, Vd = 8V, Id (Quiescent) = 2.2A, Drain Pulse width = 25µs, Duty cycle = 10%
Symbol
Parameter
Min Typ Max Unit
Fop Operating frequency
8.5 11.5 GHz
G Small signal gain
27.5 dB
RLin Input Return Loss
10 dB
RLout
Output Return Loss
12 dB
P_4dBc
Output power @ 4dBcomp (2)
39 dBm
PAE_4dB
Power Added Efficiency @ 4dBcomp
37
%
Id_4dB
Supply drain current @ 4dBcomp
2.6 A
Vd1, Vd2, Vd3 Drain supply voltage (2)
8V
Id Supply quiescent current (1)
2.2 A
Vg Gate supply voltage
-1.4 V
(1) Parameter can be adjusted by tuning of Vg.
(2) 0.5V variation on Vd leads to around 0.4dB variation of the output power (impact on
robustness see Maximum ratings).
Absolute Maximum Ratings (1)
Tamb = 20°C
Symbol
Cmp
Vd
Id
Id_sat
Vg
Tj
Tstg
Top
Parameter
Compression level (2)
Supply voltage (3)
Supply quiescent current
Supply current in saturation
Supply voltage
Maximum junction temperature
Storage temperature range
Operating temperature range
Values
6
10
2.8
4
-0.8
175
-55 to +150
-40 to +80
Unit
dB
V
A
A
V
°C
°C
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
(2) For higher compression the level limit can be increased by decreasing the voltage
Vd using the rate 0.5V/dBc.
(3) Without RF input power.
Ref DSCHA71151069 - 10 Mar 11
2/6
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice




 CHA7115-99F
X-band High Power Amplifier
CHA7115-99F
Typical measured characteristics
Measurements on Wafer:
Vd = 8V, Id (Quiescent) = 2.2A, Drain Pulse width = 25µs, Duty cycle = 10%
Linear gain versus frequency
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
8 8.5 9 9.5 10 10.5 11 11.5 12
Frequency (GHz)
42.0
41.5
41.0
40.5
40.0
39.5
39.0
38.5
38.0
37.5
37.0
36.5
36.0
35.5
35.0
8
Output Power @ 4dBcomp versus frequency
8.5 9 9.5 10 10.5 11 11.5 12
Frequency (GHz)
Ref : DSCHA71151069 - 10 Mar 11
3/6
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice



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