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Monolithic Microwave. CHA7215 Datasheet

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Monolithic Microwave. CHA7215 Datasheet






CHA7215 Microwave. Datasheet pdf. Equivalent




CHA7215 Microwave. Datasheet pdf. Equivalent





Part

CHA7215

Description

GaAs Monolithic Microwave



Feature


CHA7215 RoHS COMPLIANT X-band High Power Amplifier GaAs Monolithic Microwave IC Description The CHA7215 is a monolith ic three-stage GaAs high power amplifie r designed for X band applications. The HPA provides typically 9W output power associated to 35% power added efficien cy at 4dBc and a high robustness on mis match load. This device is manufactured using 0.25 µm Pow.
Manufacture

United Monolithic Semiconductors

Datasheet
Download CHA7215 Datasheet


United Monolithic Semiconductors CHA7215

CHA7215; er pHEMT process, including, via holes t hrough the substrate and air bridges. M ain Features 0.25 µm Power pHEMT Techn ology Frequency band: 8.5 – 11.5GHz O utput power: 39.5dBm at saturation High linear gain: 28dB Power added efficien cy: 34% @4dBc Quiescent bias point: Vd= 8V, Id=2.3A Chip size: 5 x 3.31 x 0.07m m VG1R VD1 ●● ● IN ● VD1 VG2R VD2 ●● ● VD2 VG3R VD3 ●● ●●.


United Monolithic Semiconductors CHA7215

VG3R VD3 ● OUT O utput Pow er (dB m ) 41 40,5 40 39,5 39 38,5 38 37,5 37 36,5 36 35,5 35 8 Output Power versus Frequency @Pin=19dBm Temp=-40°C Temp= +20°C Temp=+80°C 8,5 9 9,5 10 10,5 1 1 11,5 Frequency (GHz) 12 Main Charac teristics Vd=8V, Id (Quiescent) = 2.3A , Drain Pulse width = 25µs, Duty cycle = 10% Symbol Parameter Min Typ Max Unit Top Operating temp.


United Monolithic Semiconductors CHA7215

erature range -40 +80 °C Fop Operatin g frequency range 8.5 11.5 GHz PAE_4d Bc Power added efficiency @4dBc @ 20°C 34 % Psat Saturated output power @ 20°C 39.5 dBm G Small signal gain @ 20°C 25 28 31 dB ESD Protections: E lectrostatic discharge sensitive device . Observe handling precautions! Ref : DSCHA72159287 - 14 Oct 09 1/8 Specific ations subject to chan.

Part

CHA7215

Description

GaAs Monolithic Microwave



Feature


CHA7215 RoHS COMPLIANT X-band High Power Amplifier GaAs Monolithic Microwave IC Description The CHA7215 is a monolith ic three-stage GaAs high power amplifie r designed for X band applications. The HPA provides typically 9W output power associated to 35% power added efficien cy at 4dBc and a high robustness on mis match load. This device is manufactured using 0.25 µm Pow.
Manufacture

United Monolithic Semiconductors

Datasheet
Download CHA7215 Datasheet




 CHA7215
CHA7215
RoHS COMPLIANT
X-band High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA7215 is a monolithic three-stage
GaAs high power amplifier designed for X
band applications.
The HPA provides typically 9W output power
associated to 35% power added efficiency at
4dBc and a high robustness on mismatch
load.
This device is manufactured using 0.25 µm
Power pHEMT process, including, via holes
through the substrate and air bridges.
Main Features
0.25 µm Power pHEMT Technology
Frequency band: 8.5 – 11.5GHz
Output power: 39.5dBm at saturation
High linear gain: 28dB
Power added efficiency: 34% @4dBc
Quiescent bias point: Vd=8V, Id=2.3A
Chip size: 5 x 3.31 x 0.07mm
VG1R VD1
●●
IN
VD1
VG2R VD2
●●
VD2
VG3R VD3
●●
●●
VG3R VD3
OUT
41
40,5
40
39,5
39
38,5
38
37,5
37
36,5
36
35,5
35
8
Output Power versus Frequency @Pin=19dBm
Temp=-40°C
Temp=+20°C
Temp=+80°C
8,5 9
9,5 10 10,5 11 11,5
Frequency (GHz)
12
Main Characteristics
Vd=8V, Id (Quiescent) = 2.3A, Drain Pulse width = 25µs, Duty cycle = 10%
Symbol
Parameter
Min Typ Max Unit
Top Operating temperature range
-40 +80 °C
Fop Operating frequency range
8.5 11.5 GHz
PAE_4dBc Power added efficiency @4dBc @ 20°C
34
%
Psat Saturated output power @ 20°C
39.5
dBm
G Small signal gain @ 20°C
25 28 31 dB
ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions!
Ref : DSCHA72159287 - 14 Oct 09
1/8 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09




 CHA7215
CHA7215
X-band High Power Amplifier
Electrical Characteristics on test fixture
Tamb = 20°C, Vd=8V, Id (Quiescent) = 2.3A, Drain Pu lse width = 25µs, Duty cycle = 10%
Symbol
Parameter
Min Typ Max Unit
Fop Operating frequency
8.5 11.5 GHz
G Small signal gain
25 28 31
dB
G_T
Small signal gain variation versus
temperature
-0.05
dB/°C
RLin Input Return Loss
10 dB
RLout
Output Return Loss
12 dB
Psat Saturated output power
39.5
dBm
Psat_T
Saturated output power variation versus
temperature
-0.01
dB/°C
PAE_4dBc
Power added efficiency @4dBc
34 %
Id_4dBc
Supply drain current @ 4dBc
3.3 4.4
A
Vd1, Vd2, Vd3 Drain supply voltage (2)
8V
Id Supply quiescent current (1)
2.3 A
Vg1, Vg2, Vg3 Gate supply voltage
-2.2 V
(1) Parameter can be adjusted by tuning of Vg.
(2) 0.5V variation on Vd leads to around 0.4dB variation of the output power (impact on
robustness see Maximum ratings)
Absolute Maximum Ratings (1)
Tamb = 20°C
Symbol
Parameter
Values
Unit
Cmp Compression level (2)
6 dBc
Vd Supply voltage with RF input power
9V
Vd Supply voltage without RF input power
10 V
Id Supply quiescent current
3A
Id_sat Supply current in saturation
4.8 A
Vg Supply voltage
-1.1 V
Tj Maximum junction temperature
175 °C
Tstg Storage temperature range
-55 to +125
°C
Top Operating temperature range
-40 to +80
°C
(1) Operation of this device above anyone of these parameters may cause
permanent damage.
(2) For higher compression the level limit can be increased by decreasing the voltage
Vd using the rate 0.5 V / dBc
Ref : DSCHA72159287 - 14 Oct 09
2/8 Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09




 CHA7215
X-band High Power Amplifier
CHA7215
Typical measured characteristics
Measurements on Jig:
Vd=8V, Id (Quiescent) = 2.3A, Drain Pulse width = 25µs, Duty cycle = 10%
38
36
34 Temp=-40°C
Temp=+20°C
32 Temp=+80°C
30
28
26
24
22
20
18
8 8,5 9 9,5 10 10,5 11 11,5
Frequency (GHz)
Linear gain versus frequency and temperature
12
42
40
38
36
34
32
30
28
26
24
22
20
18
16
0
Pout
Gain
Temp=-40°C
Temp=-40°C
Temp=+20°C
Temp=+20°C
Temp=+80°C
Temp=+80°C
2 4 6 8 10 12 14 16 18 20
Input Power (dBm)
Linear Gain and Output Power @Freq=10GHz
versus input power and temperature
Ref : DSCHA72159287 - 14 Oct 09
3/8 Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09



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