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Monolithic Microwave. CHE1270A98F Datasheet

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Monolithic Microwave. CHE1270A98F Datasheet






CHE1270A98F Microwave. Datasheet pdf. Equivalent




CHE1270A98F Microwave. Datasheet pdf. Equivalent





Part

CHE1270A98F

Description

GaAs Monolithic Microwave



Feature


CHE1270a98F RoHS COMPLIANT 5-44GHz Dete ctor GaAs Monolithic Microwave IC Desc ription The CHE1270a is a detector that integrates a matched detection diode ( Vdet). A reference diode is also availa ble to be used in differential mode (Vr ef). It is designed for a wide range of applications where an accurate transmi tted power control is required, typical ly commercial comm.
Manufacture

United Monolithic Semiconductors

Datasheet
Download CHE1270A98F Datasheet


United Monolithic Semiconductors CHE1270A98F

CHE1270A98F; unication systems. The circuit is manufa ctured with a Schottky diode MMIC proce ss, 1µm gate length, via holes through the substrate and air bridges. It is a vailable in chip form. RF IN Matching Vdet DC Vref Main Features ■ Wide frequency range 5-44GHz ■ 30dB dynami c range ■ ESD protected ■ BCB layer protection ■ Chip size: 1.34 x 0.82 x 0.1mm Transmitted power de.


United Monolithic Semiconductors CHE1270A98F

tection (mV) 10000 1000 10GHz 22GHz 4 0GHz 11GHz 27GHz 42GHz 12GHz 32GHz 44 GHz 17GHz 37GHz 100 Vdetect= Vref-Vd et (mV) 10 1 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 Input power (dBm) Main Characteristics Tam b.= +25°C Symbol Parameter Freq Fre quency range Dr Dynamic range RL Retu rn Loss Min Typ Max Unit 5 44 GHz 30 d B -10 dB Ref. : DS.


United Monolithic Semiconductors CHE1270A98F

CH1270a2074 - 14 Mar 12 1/8 Specificati ons subject to change without notice U nited Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Ave nue du Québec - 91140 VILLEBON-SUR-YVE TTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 5-44GH z Detector CHE1270a98F Main Character istics Tamb.= +25°C, Vdc = +4.5V Sym bol Parameter Min T.

Part

CHE1270A98F

Description

GaAs Monolithic Microwave



Feature


CHE1270a98F RoHS COMPLIANT 5-44GHz Dete ctor GaAs Monolithic Microwave IC Desc ription The CHE1270a is a detector that integrates a matched detection diode ( Vdet). A reference diode is also availa ble to be used in differential mode (Vr ef). It is designed for a wide range of applications where an accurate transmi tted power control is required, typical ly commercial comm.
Manufacture

United Monolithic Semiconductors

Datasheet
Download CHE1270A98F Datasheet




 CHE1270A98F
CHE1270a98F
RoHS COMPLIANT
5-44GHz Detector
GaAs Monolithic Microwave IC
Description
The CHE1270a is a detector that integrates a
matched detection diode (Vdet). A reference
diode is also available to be used in
differential mode (Vref).
It is designed for a wide range of applications
where an accurate transmitted power control
is required, typically commercial
communication systems.
The circuit is manufactured with a Schottky
diode MMIC process, 1µm gate length, via
holes through the substrate and air bridges.
It is available in chip form.
RF IN
Matching
Vdet
DC
Vref
Main Features
Wide frequency range 5-44GHz
30dB dynamic range
ESD protected
BCB layer protection
Chip size: 1.34 x 0.82 x 0.1mm
Transmitted power detection (mV)
10000
1000
10GHz
22GHz
40GHz
11GHz
27GHz
42GHz
12GHz
32GHz
44GHz
17GHz
37GHz
100
10
1
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16
Input power (dBm)
Main Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Dr Dynamic range
RL Return Loss
Min Typ Max Unit
5 44 GHz
30 dB
-10 dB
Ref. : DSCH1270a2074 - 14 Mar 12
1/8 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34




 CHE1270A98F
5-44GHz Detector
CHE1270a98F
Main Characteristics
Tamb.= +25°C, Vdc = +4.5V
Symbol
Parameter
Min Typ Max Unit
Freq Frequency range
5 44 GHz
Dr Dynamic range (for Input Power detection)
30
dB
IPd Input Power detection
-15 15 dBm
Vdetect
Voltage detection Vref – Vdet
from IPd_min to IPd_max
5 2200 mV
Return Loss (5 – 10GHz)
-4 -3 dB
Return Loss (10 – 12GHz)
-7 -5 dB
RL Return Loss (12 – 14.5GHz)
-8 -6 dB
Return Loss (14.5 – 42GHz)
-10 -8 dB
Return Loss (42 – 44GHz)
-7 -5 dB
Vdc Bias voltage
4.5 V
Idc Bias current
50 70 90 µA
These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports but with 27kresistor in parallel on pads Vdet and Vref.
Ref. : DSCH1270a2074 - 14 Mar 12
2/8 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34




 CHE1270A98F
5-44GHz Detector
CHE1270a98F
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vdc Drain bias voltage
6V V
IPdmax Maximum Input Power detection
+18 dBm
Ta Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +150
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
Ref. : DSCH1270a2074 - 14 Mar 12
3/8 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34



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