Document
CHR1080a98F
71-86GHz Down-converter
GaAs Monolithic Microwave IC
Description
The CHR1080a98F is a multifunction monolithic receiver, which integrates a balanced sub-harmonic cold FET mixer, a LO buffer, and a RF low noise amplifier. It is designed for the E-band telecommunication application, particularly well suited for the new generation of high capacity backhaul. The circuit is manufactured with a pHEMT process, 0.10µm gate length. It is available in chip form.
GLO DLO
GX DRF GRF
LO RF
I Q
Main Features
■ Broadband RF performances: 71-86GHz ■ 8dB Conversion Gain ■ 5dB Noise Figure ■ -10dBm Input Power at 1dB compression ■ DC bias: Vd=3.5V @Id=175mA ■ Chip size 3.43x2.24x0.07mm
Conversion Gain (dB)
Conversion Gain
16
14
12
10
8
6 LSB; IF= 10GHz LSB; IF= 6GHz
4 USB; IF= 10GHz USB; IF= 6GHz
2
0 71 73 75 77 79 81 RF Frequency (GHz)
83
85
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
FRF RF Frequency
FIF IF frequency
G Conversion gain
NF Noise Figure
Min Typ Max Unit 71 86 GHz DC 12 GHz
8 dB 5 dB
Ref. : DSCHR1080a5093 - 03 Apr 15
1/12 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHR1080a98F
71-86GHz Down-converter
Electrical Characteristics
Tamb.= +25°C, Vd = 3.5V
Symbol
Parameter
Min Typ
FRF
RF Frequency range
71
FLO
LO Frequency range
34.5
FIF IF output Frequency
DC 10
PLO Gc
LO input power Conversion gain (1)
01 8
R_LO
LO input return loss
8
R_RF
RF input return loss
10
NF Im_rej
Noise Figure Image rejection (1)
5 16
2LO Leak. 2LO Leakage to RF port
-38
RFin P1dB RF Input power @1dB compression Idt Drain current (Id LO Buffer +Id LNA) (2)
-10 175
DLO, DRF DC drain voltage (LO Buffer, LNA)
3.5
GLO, GX, GRF
LO Buffer, Mixer, LNA DC gate voltage
-2
(1) An external combiner 90° is required on I / Q.
(2) LO drain quiescent current 85mA, LNA drain quiescent current 90mA.
Max Unit 86 GHz 44 GHz 12 GHz
dBm dB dB dB dB dBc dBm dBm mA V
V
These values are representative of on-wafer measurements made without bonding wires at the RF & LO ports.
A ribbon (75 µm wide) connection at the RF and LO inputs (see chapter recommended chip assembly) could improve the results.
Ref. : DSCHR1080a5093 - 03 Apr 15
2/12 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
71-86GHz Down-converter
CHR1080a98F
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vd Drain bias voltage
4V V
Idt Drain bias current
240 mA
Vg Gate bias voltage Pin_LO Maximum LO peak input power overdrive (2)
-3.0 to -1.4 +10
V dBm
Tj Junction temperature
175 °C
Ta Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +150
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
(2) Duration < 1s.
Typical Bias Conditions
Tamb.= +25°C
Pad name
Pad No
Parameter
Typical Values
Unit
GRF
6 LNA DC gate voltage (1)
-2 V
DRF
7 LNA DC drain voltage (90mA)
3.5 V
GX 8 Mixer DC gate voltage
-2 V
DLO
10 LO Buffer DC drain voltage (85mA)
3.5 V
GLO
12 LO Buffer DC gate voltage
-2.2 V
5, 9, 11 Not connected (1) LNA gate voltage could be adjusted between -3.0V and -1.4V to perform gain control
Ref. : DSCHR1080a5093 - 03 Apr 15
3/12 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHR1080a98F
71-86GHz Down-converter
Typical on wafer Measurements
Tamb.= +25°C, Vd = +3.5V
Without specific comment: GLO= -2.2V, GX= -2V, Pin_RF= -30dBm, Pin_LO= 1dBm, IF frequency = 10GHz GRF to be tuned for I_DRF= 90mA ( GRF close to -2V) LSB: RF= 2LO- IF; USB: RF= 2LO+ IF
Conversion Gain (dB)
Conversion Gain versus RF Frequency & IF Frequency
16
14
12
10
8
6 LSB; IF= 10GHz LSB; IF= 6GHz
4 USB; IF= 10GHz USB; IF= 6GHz
2
0 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 RF Frequency (GHz)
Ref. : DSCHR1080a5093 - 03 Apr 15
4/12 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
71-86GHz Down-converter
CHR1080a98F
Typical on wafer Measurements
Tamb.= +25°C, Vd = +3.5V
Image Rejection (dBc)
Image rejection versus RF Frequency & IF Frequency
40
38
36
IF= 10GHz; Infradyne mode
IF= 10GHz; Supradyne mode
34
IF= 6GHz
IF= 6GHz
32
30
28
26
24
22
20
18
16
14
12
10 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86
RF Frequency (GHz)
Conversion Gain versus RF Frequency & Mixer voltage
16
14 12 10
Conversion Gain (dB)
8
6
4
Channel Q; VGX= -2V
Channel Q; VGX=-1.8.