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CHR1080A98F Dataheets PDF



Part Number CHR1080A98F
Manufacturers United Monolithic Semiconductors
Logo United Monolithic Semiconductors
Description GaAs Monolithic Microwave
Datasheet CHR1080A98F DatasheetCHR1080A98F Datasheet (PDF)

CHR1080a98F 71-86GHz Down-converter GaAs Monolithic Microwave IC Description The CHR1080a98F is a multifunction monolithic receiver, which integrates a balanced sub-harmonic cold FET mixer, a LO buffer, and a RF low noise amplifier. It is designed for the E-band telecommunication application, particularly well suited for the new generation of high capacity backhaul. The circuit is manufactured with a pHEMT process, 0.10µm gate length. It is available in chip form. GLO DLO GX DRF GRF LO RF I.

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CHR1080a98F 71-86GHz Down-converter GaAs Monolithic Microwave IC Description The CHR1080a98F is a multifunction monolithic receiver, which integrates a balanced sub-harmonic cold FET mixer, a LO buffer, and a RF low noise amplifier. It is designed for the E-band telecommunication application, particularly well suited for the new generation of high capacity backhaul. The circuit is manufactured with a pHEMT process, 0.10µm gate length. It is available in chip form. GLO DLO GX DRF GRF LO RF I Q Main Features ■ Broadband RF performances: 71-86GHz ■ 8dB Conversion Gain ■ 5dB Noise Figure ■ -10dBm Input Power at 1dB compression ■ DC bias: Vd=3.5V @Id=175mA ■ Chip size 3.43x2.24x0.07mm Conversion Gain (dB) Conversion Gain 16 14 12 10 8 6 LSB; IF= 10GHz LSB; IF= 6GHz 4 USB; IF= 10GHz USB; IF= 6GHz 2 0 71 73 75 77 79 81 RF Frequency (GHz) 83 85 Main Electrical Characteristics Tamb.= +25°C Symbol Parameter FRF RF Frequency FIF IF frequency G Conversion gain NF Noise Figure Min Typ Max Unit 71 86 GHz DC 12 GHz 8 dB 5 dB Ref. : DSCHR1080a5093 - 03 Apr 15 1/12 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHR1080a98F 71-86GHz Down-converter Electrical Characteristics Tamb.= +25°C, Vd = 3.5V Symbol Parameter Min Typ FRF RF Frequency range 71 FLO LO Frequency range 34.5 FIF IF output Frequency DC 10 PLO Gc LO input power Conversion gain (1) 01 8 R_LO LO input return loss 8 R_RF RF input return loss 10 NF Im_rej Noise Figure Image rejection (1) 5 16 2LO Leak. 2LO Leakage to RF port -38 RFin P1dB RF Input power @1dB compression Idt Drain current (Id LO Buffer +Id LNA) (2) -10 175 DLO, DRF DC drain voltage (LO Buffer, LNA) 3.5 GLO, GX, GRF LO Buffer, Mixer, LNA DC gate voltage -2 (1) An external combiner 90° is required on I / Q. (2) LO drain quiescent current 85mA, LNA drain quiescent current 90mA. Max Unit 86 GHz 44 GHz 12 GHz dBm dB dB dB dB dBc dBm dBm mA V V These values are representative of on-wafer measurements made without bonding wires at the RF & LO ports. A ribbon (75 µm wide) connection at the RF and LO inputs (see chapter recommended chip assembly) could improve the results. Ref. : DSCHR1080a5093 - 03 Apr 15 2/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 71-86GHz Down-converter CHR1080a98F Absolute Maximum Ratings (1) Tamb.= +25°C Symbol Parameter Values Unit Vd Drain bias voltage 4V V Idt Drain bias current 240 mA Vg Gate bias voltage Pin_LO Maximum LO peak input power overdrive (2) -3.0 to -1.4 +10 V dBm Tj Junction temperature 175 °C Ta Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +150 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Typical Bias Conditions Tamb.= +25°C Pad name Pad No Parameter Typical Values Unit GRF 6 LNA DC gate voltage (1) -2 V DRF 7 LNA DC drain voltage (90mA) 3.5 V GX 8 Mixer DC gate voltage -2 V DLO 10 LO Buffer DC drain voltage (85mA) 3.5 V GLO 12 LO Buffer DC gate voltage -2.2 V 5, 9, 11 Not connected (1) LNA gate voltage could be adjusted between -3.0V and -1.4V to perform gain control Ref. : DSCHR1080a5093 - 03 Apr 15 3/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHR1080a98F 71-86GHz Down-converter Typical on wafer Measurements Tamb.= +25°C, Vd = +3.5V Without specific comment: GLO= -2.2V, GX= -2V, Pin_RF= -30dBm, Pin_LO= 1dBm, IF frequency = 10GHz GRF to be tuned for I_DRF= 90mA ( GRF close to -2V) LSB: RF= 2LO- IF; USB: RF= 2LO+ IF Conversion Gain (dB) Conversion Gain versus RF Frequency & IF Frequency 16 14 12 10 8 6 LSB; IF= 10GHz LSB; IF= 6GHz 4 USB; IF= 10GHz USB; IF= 6GHz 2 0 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 RF Frequency (GHz) Ref. : DSCHR1080a5093 - 03 Apr 15 4/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 71-86GHz Down-converter CHR1080a98F Typical on wafer Measurements Tamb.= +25°C, Vd = +3.5V Image Rejection (dBc) Image rejection versus RF Frequency & IF Frequency 40 38 36 IF= 10GHz; Infradyne mode IF= 10GHz; Supradyne mode 34 IF= 6GHz IF= 6GHz 32 30 28 26 24 22 20 18 16 14 12 10 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 RF Frequency (GHz) Conversion Gain versus RF Frequency & Mixer voltage 16 14 12 10 Conversion Gain (dB) 8 6 4 Channel Q; VGX= -2V Channel Q; VGX=-1.8.


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