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Monolithic Microwave. CHR2411-QDG Datasheet

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Monolithic Microwave. CHR2411-QDG Datasheet






CHR2411-QDG Microwave. Datasheet pdf. Equivalent




CHR2411-QDG Microwave. Datasheet pdf. Equivalent





Part

CHR2411-QDG

Description

GaAs Monolithic Microwave



Feature


CHR2411-QDG 22-24.5GHz RX Multifunction GaAs Monolithic Microwave IC in SMD le adless package Description The CHR2411 -QDG is a monolithic multifunction in K -Band which integrates a low noise ampl ifier and a mixer generating an IF sign al from DC to 1MHz. All the active devi ces are self biased on chip. The circui t is manufactured with a standard GaAs pHEMT process, 0.2.
Manufacture

United Monolithic Semiconductors

Datasheet
Download CHR2411-QDG Datasheet


United Monolithic Semiconductors CHR2411-QDG

CHR2411-QDG; 5µm gate length, via holes through the substrate, air bridges and electron bea m gate lithography. It is available in a 24 leads RoHS compliant QFN4x4 packag e. UMS R2411 YYWW Plastic packag e Main Features ■ 22-24.5GHz Bandwid th ■ 7dB Typical Noise figure ■ 23d B  2.5dB Stable gain in temperature ■ +5V single supply Voltage ■ 24L-Q FN4x4 SMD leadless package ■ MSL1 .


United Monolithic Semiconductors CHR2411-QDG

Multifunction block diagram Main Electr ical Characteristics Tamb.= +25°C Sy mbol Parameter Min Typ Max Unit RF F requency range 22 24.5 GHz Gc Convers ion Gain 19 23 27 dB NF SSB Noise fig ure (IF=1MHz) 7 dB LO & RF Input / Ou tput Return Loss -15 -8 dB ESD Protec tion: Electrostatic discharge sensitive device. Observe handling precautions! Ref. : CHR2411-QDG.


United Monolithic Semiconductors CHR2411-QDG

3116 - 26 Apr 13 1/10 Specifications su bject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - F ax: +33 (0) 1 69 86 34 34 CHR2411-QDG 22-24.5GHz RX Multifunction Electrica l Characteristics Tamb.= +25°C Symbo l Parameter RF Freq.

Part

CHR2411-QDG

Description

GaAs Monolithic Microwave



Feature


CHR2411-QDG 22-24.5GHz RX Multifunction GaAs Monolithic Microwave IC in SMD le adless package Description The CHR2411 -QDG is a monolithic multifunction in K -Band which integrates a low noise ampl ifier and a mixer generating an IF sign al from DC to 1MHz. All the active devi ces are self biased on chip. The circui t is manufactured with a standard GaAs pHEMT process, 0.2.
Manufacture

United Monolithic Semiconductors

Datasheet
Download CHR2411-QDG Datasheet




 CHR2411-QDG
CHR2411-QDG
22-24.5GHz RX Multifunction
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHR2411-QDG is a monolithic
multifunction in K-Band which integrates a
low noise amplifier and a mixer generating an
IF signal from DC to 1MHz. All the active
devices are self biased on chip.
The circuit is manufactured with a standard
GaAs pHEMT process, 0.25µm gate length,
via holes through the substrate, air bridges
and electron beam gate lithography.
It is available in a 24 leads RoHS compliant
QFN4x4 package.
UMS
R2411
YYWW
Plastic package
Main Features
22-24.5GHz Bandwidth
7dB Typical Noise figure
23dB 2.5dB Stable gain in temperature
+5V single supply Voltage
24L-QFN4x4 SMD leadless package
MSL1
Multifunction block diagram
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Min Typ Max Unit
RF Frequency range
22 24.5 GHz
Gc Conversion Gain
19 23 27 dB
NF SSB Noise figure (IF=1MHz)
7 dB
LO & RF Input / Output Return Loss
-15 -8 dB
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. : CHR2411-QDG3116 - 26 Apr 13
1/10 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34




 CHR2411-QDG
CHR2411-QDG
22-24.5GHz RX Multifunction
Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
RF Frequency range
LO Frequency range
IF Frequency range
RF Return Loss
LO Return Loss
IF IF Load impedance
PLO LO Drive Power
Gc Conversion Gain
ΔG(T) Gain variation over Temperature
NF SSB Noise figure (IF=1MHz)
Pin-1dB Input Power at 1dB Gain Comp. @24GHz
IP3_IN Input IP3 @24GHz
Iso LO to RF Isolation
+Vg, +Vd Supply Voltage
+I Supply Current
Top Operating temperature range
Min Typ Max Unit
22 24.5 GHz
22 24.5 GHz
DC 1.0 MHz
-15 -8 dB
-15 -8 dB
50
05
dBm
19 23 27 dB
2.5
dB
7 dB
-21 dBm
-12 dBm
-45 -30 dB
5V
60 80 mA
-40 25 105 °C
These performance has been obtained with the chip in QFN package mounted on the
recommended boards (ref. 95541 & 95581) described in this document. These performances
are highly dependent on this environment.
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Parameter
Values
Unit
+Vg, +Vd Maximum positive supply voltage
6V
+I Maximum positive supply voltage
90 mA
PLO Maximum peak input power overdrive
8 dBm
PRF Maximum peak input power overdrive
-12 dBm
Top Operating temperature range
-40 to +105
°C
Tstg Storage temperature range
-55 to +150
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
Ref. : CHR2411-QDG3116 - 26 Apr 13
2/10 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34




 CHR2411-QDG
22-24.5GHz RX Multifunction
CHR2411-QDG
Device thermal performances
All the figures given in this section are obtained assuming that the QFN device is cooled
down only by conduction through the package thermal pad (no convection mode considered).
The temperature is monitored at the package back-side interface (Tcase) as shown below.
The system maximum temperature must be adjusted in order to guarantee that Tcase
remains below the maximum value specified in the next table. So, the system PCB must be
designed to comply with this requirement.
A derating must be applied on the dissipated power if the Tcase temperature cannot be
maintained below the maximum temperature specified (see the curve Pdiss. Max) in order to
guarantee the nominal device life time (MTTF).
Ref. : CHR2411-QDG3116 - 26 Apr 13
3/10 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34



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