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NX2020N2 Dataheets PDF



Part Number NX2020N2
Manufacturers NXP
Logo NXP
Description N-channel Trench MOSFET
Datasheet NX2020N2 DatasheetNX2020N2 Datasheet (PDF)

DFN2020MD-6 NX2020N2 30 V, N-channel Trench MOSFET 20 January 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Very fast switching • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm • Exposed drain pad for excellent thermal conduction • Tin-pl.

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DFN2020MD-6 NX2020N2 30 V, N-channel Trench MOSFET 20 January 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Very fast switching • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm • Exposed drain pad for excellent thermal conduction • Tin-plated 100 % solderable side pads for optical solder inspection 3. Applications • Charging switch for portable devices • DC-to-DC converters • Power management in battery-driven portables • Hard disk and computing power management 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 10 V; Tamb = 25 °C; t ≤ 5 s VGS = 10 V; ID = 7 A; Tj = 25 °C Min Typ Max Unit - - 30 V -20 - 20 V [1] - - 10.4 A - 16.5 19.5 mΩ [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Scan or click this QR code to view the latest information for this product NXP Semiconductors NX2020N2 30 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain 7 D drain 8 S source Simplified outline 16 7 25 Graphic symbol D G 384 Transparent top view DFN2020MD-6 (SOT1220) S 017aaa253 6. Ordering information Table 3. Ordering information Type number Package Name Description Version NX2020N2 DFN2020MD-6 DFN2020MD-6: plastic thermal enhanced ultra thin small outline SOT1220 package; no leads; 6 terminals 7. Marking Table 4. Marking codes Type number NX2020N2 Marking code 2F NX2020N2 Product data sheet All information provided in this document is subject to legal disclaimers. 20 January 2014 © NXP N.V. 2014. All rights reserved 2 / 15 NXP Semiconductors NX2020N2 30 V, N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 10 V; Tamb = 25 °C; t ≤ 5 s VGS = 10 V; Tamb = 25 °C VGS = 10 V; Tamb = 100 °C IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tamb = 25 °C; t ≤ 5 s Tsp = 25 °C Tj junction temperature Tamb ambient temperature Tstg storage temperature Source-drain diode IS source current Tamb = 25 °C [1] [1] [1] [1] [1] [1] Min Max Unit - 30 V -20 20 V - 10.4 A - 7.2 A - 4.6 A - 30 A - 1.7 W - 3.5 W - 12.5 W -55 150 °C -55 150 °C -65 150 °C - 2.2 A [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. 120 017aaa123 120 017aaa124 Pder (%) Ider (%) 80 80 40 40 0 - 75 - 25 25 75 125 175 Tj (°C) Fig. 1. Normalized total power dissipation as a function of junction temperature 0 - 75 - 25 25 75 125 175 Tj (°C) Fig. 2. Normalized continuous drain current as a function of junction temperature NX2020N2 Product data sheet All information provided in this document is subject to legal disclaimers. 20 January 2014 © NXP N.V. 2014. All rights reserved 3 / 15 NXP Semiconductors NX2020N2 30 V, N-channel Trench MOSFET 102 ID (A) 10 1 Limit RDSon = VDS/ID 017aaa541 tp = 10 µs tp = 100 µs tp = 1 ms tp = 10 ms 10-1 DC; Tsp = 25 °C tp = 100 ms DC; Tamb = 25 °C; drain mounting pad 6 cm2 10-2 10-1 IDM = single pulse 1 10 102 VDS (V) Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 9. Thermal characteristics Table 6. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air Rth(j-sp) thermal resistance from junction to solder point Min Typ Max Unit [1] - 235 270 K/W [2] - 67 74 K/W [3] - 33 36 K/W - 5 10 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5 s NX2020N2 Product data sheet All information provided in this document is subject to legal disclaimers. 20 January 2014 © NXP N.V. 2014. All rights reserved 4 / 15 NXP Semiconductors NX2020N2 30 V, N-channel Trench MOSFET 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 0.05 10 0.02 0.01 0 017aaa542 1 10-3 10-2 FR4 PCB, standard footprint 10-1 1 10 102 103 tp (s) Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duratio.


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