Document
DFN2020MD-6
NX2020N2
30 V, N-channel Trench MOSFET
20 January 2014
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Trench MOSFET technology • Very fast switching • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm • Exposed drain pad for excellent thermal conduction • Tin-plated 100 % solderable side pads for optical solder inspection
3. Applications
• Charging switch for portable devices • DC-to-DC converters • Power management in battery-driven portables • Hard disk and computing power management
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
VGS = 10 V; ID = 7 A; Tj = 25 °C
Min Typ Max Unit
- - 30 V
-20 -
20 V
[1] - - 10.4 A
- 16.5 19.5 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
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NXP Semiconductors
NX2020N2
30 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain 7 D drain 8 S source
Simplified outline
16 7
25
Graphic symbol
D
G
384
Transparent top view
DFN2020MD-6 (SOT1220)
S 017aaa253
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
NX2020N2
DFN2020MD-6 DFN2020MD-6: plastic thermal enhanced ultra thin small outline SOT1220 package; no leads; 6 terminals
7. Marking
Table 4. Marking codes Type number NX2020N2
Marking code 2F
NX2020N2
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 January 2014
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NXP Semiconductors
NX2020N2
30 V, N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tamb = 25 °C; t ≤ 5 s
Tsp = 25 °C
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Source-drain diode
IS source current
Tamb = 25 °C
[1] [1] [1] [1] [1]
[1]
Min Max Unit - 30 V
-20 20
V
- 10.4 A
- 7.2 A
- 4.6 A
- 30 A
- 1.7 W
- 3.5 W
- 12.5 W
-55 150 °C
-55 150 °C
-65 150 °C
- 2.2 A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
120
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120
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Pder (%)
Ider (%)
80 80
40 40
0 - 75
- 25
25
75 125 175 Tj (°C)
Fig. 1. Normalized total power dissipation as a function of junction temperature
0 - 75 - 25
25
75 125 175 Tj (°C)
Fig. 2. Normalized continuous drain current as a function of junction temperature
NX2020N2
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 January 2014
© NXP N.V. 2014. All rights reserved
3 / 15
NXP Semiconductors
NX2020N2
30 V, N-channel Trench MOSFET
102 ID (A)
10
1
Limit RDSon = VDS/ID
017aaa541
tp = 10 µs
tp = 100 µs tp = 1 ms tp = 10 ms
10-1
DC; Tsp = 25 °C
tp = 100 ms
DC; Tamb = 25 °C; drain mounting pad 6 cm2
10-2 10-1
IDM = single pulse
1
10 102 VDS (V)
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
9. Thermal characteristics
Table 6. Symbol Rth(j-a)
Thermal characteristics Parameter
thermal resistance from junction to ambient
Conditions in free air
Rth(j-sp)
thermal resistance from junction to solder point
Min Typ Max Unit
[1] -
235 270 K/W
[2] -
67 74 K/W
[3] -
33 36 K/W
- 5 10 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5 s
NX2020N2
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 January 2014
© NXP N.V. 2014. All rights reserved
4 / 15
NXP Semiconductors
NX2020N2
30 V, N-channel Trench MOSFET
103
Zth(j-a) (K/W)
102
duty cycle = 1
0.75 0.5
0.33 0.25
0.2
0.1
0.05 10
0.02
0.01 0
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1 10-3
10-2
FR4 PCB, standard footprint
10-1
1
10 102 103 tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duratio.