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NX7002BKS Dataheets PDF



Part Number NX7002BKS
Manufacturers NXP
Logo NXP
Description dual N-channel Trench MOSFET
Datasheet NX7002BKS DatasheetNX7002BKS Datasheet (PDF)

NX7002BKS 60 V, dual N-channel Trench MOSFET 12 May 2015 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Relay driver • High-speed line driver • Low-side loadswi.

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NX7002BKS 60 V, dual N-channel Trench MOSFET 12 May 2015 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor VDS drain-source voltage Tj = 25 °C - - 60 V VGS gate-source voltage -20 - 20 V ID drain current VGS = 10 V; Tsp = 25 °C - - 330 mA VGS = 10 V; Tamb = 25 °C [1] - - 240 mA Static characteristics (per transistor) RDSon drain-source on-state VGS = 10 V; ID = 200 mA; Tj = 25 °C resistance - 2.2 2.8 Ω [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm2. Scan or click this QR code to view the latest information for this product NXP Semiconductors NX7002BKS 60 V, dual N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 Simplified outline 654 Graphic symbol D1 D2 123 TSSOP6 (SOT363) G1 G2 S1 S2 017aaa256 6. Ordering information Table 3. Ordering information Type number Package Name NX7002BKS TSSOP6 Description plastic surface-mounted package; 6 leads Version SOT363 7. Marking Table 4. Marking codes Type number NX7002BKS Marking code [1] LT% [1] % = placeholder for manufacturing site code NX7002BKS Product data sheet All information provided in this document is subject to legal disclaimers. 12 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 16 NXP Semiconductors NX7002BKS 60 V, dual N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Per transistor VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 10 V; Tsp = 25 °C VGS = 10 V; Tamb = 25 °C VGS = 10 V; Tamb = 100 °C IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Source-drain diode IS source current Per device Tj junction temperature Tamb ambient temperature Tstg storage temperature Tsp = 25 °C Tamb = 25 °C [1] [1] [2] [1] [1] Min Max Unit - 60 V -20 20 V - 330 mA - 240 mA - 150 mA - 0.8 A - 285 mW - 320 mW - 870 mW - 200 mA -55 150 °C -55 150 °C -65 150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm2. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. NX70.


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