Document
NX7002BKS
60 V, dual N-channel Trench MOSFET
12 May 2015
Product data sheet
1. General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Logic-level compatible • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
• Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
Per transistor
VDS drain-source voltage Tj = 25 °C
- - 60 V
VGS gate-source voltage
-20 -
20 V
ID
drain current
VGS = 10 V; Tsp = 25 °C
- - 330 mA
VGS = 10 V; Tamb = 25 °C
[1] - - 240 mA
Static characteristics (per transistor)
RDSon
drain-source on-state VGS = 10 V; ID = 200 mA; Tj = 25 °C resistance
- 2.2 2.8 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm2.
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NXP Semiconductors
NX7002BKS
60 V, dual N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1
Simplified outline
654
Graphic symbol
D1
D2
123
TSSOP6 (SOT363)
G1
G2
S1 S2 017aaa256
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
NX7002BKS
TSSOP6
Description plastic surface-mounted package; 6 leads
Version SOT363
7. Marking
Table 4. Marking codes Type number
NX7002BKS
Marking code [1]
LT%
[1] % = placeholder for manufacturing site code
NX7002BKS
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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NXP Semiconductors
NX7002BKS
60 V, dual N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Per transistor
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = 10 V; Tsp = 25 °C
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Source-drain diode
IS source current
Per device
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Tsp = 25 °C Tamb = 25 °C
[1] [1]
[2] [1]
[1]
Min Max Unit
- 60 V
-20 20
V
- 330 mA
- 240 mA
- 150 mA
- 0.8 A
- 285 mW - 320 mW
- 870 mW
- 200 mA
-55 150 °C -55 150 °C -65 150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
NX70.