PESD18VF1BL

PESD18VF1BL Ultra low capacitance bidirectional ESD protection diode Rev. 1— 2 September 2013 Product data sheet 1. General description Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a DFN1006-2 (SOD882) leadless ultra small Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and other transients. 2. Features and benefits Ultra low diode capacitance Cd = 0.35 pF High reverse standoff voltage VRWM = 18 V Very small voltage dependency of the capacitance ESD protection up to ±10 kV according to IEC 61000-4-2, level 4 3. Applications NFC antenna protection Protection of high-speed data lines 4. Quick reference data Table 1. Symbol Cd VRWM Quick reference data Parameter Conditions diode capacitance f = 1 MHz; VR = 0 V reverse standoff voltage Min Typ Max Unit 0.28 0.35 0.5 pF - - 18 V 5. Pinning information Table 2. Pin 1 2 Pinning information Symbol Description K1 cathode (diode 1) K2 cathode (diode 2) Simplified outline Graphic symbol 12 Transparent top view DFN1006-2 (SOD882) 12 sym045 NXP Semiconductors PESD18VF1BL Ultra low capacitance bidirectional ESD protection diode 6. Ordering information Table 3. Ordering information Type number Package Name PESD18VF1BL DFN1006-2 Description leadless ultra small plastic package; 2 terminals Version SOD882 7. Marking Table 4. Marking codes Type number PESD18VF1BL Marking code WM 8. Limiting valu...