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protection diode. PESD3V3C1BSF Datasheet

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protection diode. PESD3V3C1BSF Datasheet






PESD3V3C1BSF diode. Datasheet pdf. Equivalent




PESD3V3C1BSF diode. Datasheet pdf. Equivalent





Part

PESD3V3C1BSF

Description

Ultra low capacitance bidirectional ESD protection diode



Feature


PESD3V3C1BSF Ultra low capacitance bidi rectional ESD protection diode 26 June 2015 Product data sheet 1. General d escription Ultra low capacitance bidire ctional ElectroStatic Discharge (ESD) p rotection diode, part of the TrEOS Prot ection family. This device is housed in a DSN0603-2 (SOD962) leadless ultra sm all Surface-Mounted Device (SMD) packag e. The TrEOS Prote.
Manufacture

NXP

Datasheet
Download PESD3V3C1BSF Datasheet


NXP PESD3V3C1BSF

PESD3V3C1BSF; ction family is optimized for safeguardi ng very sensitive high-speed interfaces against ESD pulses with a high level o f robustness. 2. Features and benefits • Bidirectional ESD protection of on e line • Extremely low diode capacita nce Cd = 0.2 pF • ESD protection up t o ±20 kV according to IEC 61000-4-2 Ultra small SMD package 3. Applicati ons ESD and surge protectio.


NXP PESD3V3C1BSF

n for: • ultra high-speed datalines very sensitive interface lines • ge neric interface lines in portable elect ronics, communication, consumer and com puting devices. 4. Quick reference dat a Table 1. Symbol VRWM Cd Quick refer ence data Parameter reverse standoff vo ltage diode capacitance Conditions Tam b = 25 °C f = 1 MHz; VR = 0 V; Tamb = 25 °C Min Typ Max Unit -.


NXP PESD3V3C1BSF

- 3.3 V - 0.2 0.25 pF Scan or click th is QR code to view the latest informati on for this product NXP Semiconductors PESD3V3C1BSF Ultra low capacitance bi directional ESD protection diode 5. Pi nning information Table 2. Pinning info rmation Pin Symbol Description 1 K1 cat hode (diode 1) 2 K2 cathode (diode 2) Simplified outline Graphic symbol 12 Transparent top vi.

Part

PESD3V3C1BSF

Description

Ultra low capacitance bidirectional ESD protection diode



Feature


PESD3V3C1BSF Ultra low capacitance bidi rectional ESD protection diode 26 June 2015 Product data sheet 1. General d escription Ultra low capacitance bidire ctional ElectroStatic Discharge (ESD) p rotection diode, part of the TrEOS Prot ection family. This device is housed in a DSN0603-2 (SOD962) leadless ultra sm all Surface-Mounted Device (SMD) packag e. The TrEOS Prote.
Manufacture

NXP

Datasheet
Download PESD3V3C1BSF Datasheet




 PESD3V3C1BSF
PESD3V3C1BSF
Ultra low capacitance bidirectional ESD protection diode
26 June 2015
Product data sheet
1. General description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode,
part of the TrEOS Protection family. This device is housed in a DSN0603-2 (SOD962)
leadless ultra small Surface-Mounted Device (SMD) package. The TrEOS Protection
family is optimized for safeguarding very sensitive high-speed interfaces against ESD
pulses with a high level of robustness.
2. Features and benefits
Bidirectional ESD protection of one line
Extremely low diode capacitance Cd = 0.2 pF
ESD protection up to ±20 kV according to IEC 61000-4-2
Ultra small SMD package
3. Applications
ESD and surge protection for:
ultra high-speed datalines
very sensitive interface lines
generic interface lines
in portable electronics, communication, consumer and computing devices.
4. Quick reference data
Table 1.
Symbol
VRWM
Cd
Quick reference data
Parameter
reverse standoff
voltage
diode capacitance
Conditions
Tamb = 25 °C
f = 1 MHz; VR = 0 V; Tamb = 25 °C
Min Typ Max Unit
- - 3.3 V
- 0.2 0.25 pF
Scan or click this QR code to view the latest information for this product




 PESD3V3C1BSF
NXP Semiconductors
PESD3V3C1BSF
Ultra low capacitance bidirectional ESD protection diode
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 K1 cathode (diode 1)
2 K2 cathode (diode 2)
Simplified outline
Graphic symbol
12
Transparent
top view
DSN0603-2 (SOD962-2)
12
sym045
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PESD3V3C1BSF
DSN0603-2
Description
Leadless ultra small package; 2 terminals; body 0.6 x 0.3 x 0.3
mm
Version
SOD962-2
7. Marking
Table 4. Marking codes
Type number
PESD3V3C1BSF
Marking code
P
PESD3V3C1BSF
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved
2 / 12




 PESD3V3C1BSF
NXP Semiconductors
PESD3V3C1BSF
Ultra low capacitance bidirectional ESD protection diode
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
IPPM
rated peak pulse current
tp = 8/20 µs
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
ESD maximum ratings
VESD
electrostatic discharge voltage IEC 61000-4-2; contact discharge
IEC 61000-4-2; air discharge
[1] According to IEC 61000-4-5 and IEC 61643-321.
[2] Device stressed with ten non-repetitive ESD pulses.
120
IPP
(%)
80
100 % IPP; 8 µs
e- t
001aaa630
IPP
100 %
90 %
50 % IPP; 20 µs
40
Min Max Unit
[1] -
9A
- 150 °C
-40 125 °C
-65 150 °C
[2] -
[2] -
20 kV
20 kV
001aaa631
0
0 10 20 30 40
t (µs)
Fig. 1. 8/20 µs pulse waveform according to
IEC 61000-4-5 and IEC 61643-321
10 %
tr = 0.6 ns to 1 ns
30 ns
60 ns
Fig. 2. ESD pulse waveform according to
IEC 61000-4-2
t
PESD3V3C1BSF
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved
3 / 12



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