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protection diode. PESD3V3X1BCSF Datasheet

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protection diode. PESD3V3X1BCSF Datasheet






PESD3V3X1BCSF diode. Datasheet pdf. Equivalent




PESD3V3X1BCSF diode. Datasheet pdf. Equivalent





Part

PESD3V3X1BCSF

Description

Ultra low capacitance bidirectional ESD protection diode



Feature


PESD3V3X1BCSF Ultra low capacitance bid irectional ESD protection diode 17 Aug ust 2015 Product data sheet 1. Genera l description Ultra low capacitance bid irectional ElectroStatic Discharge (ESD ) protection diode a DSN0603-2 (SOD962) leadless ultra small Surface-Mounted D evice (SMD) package. 2. Features and b enefits • Bidirectional ESD protectio n of one line • Low .
Manufacture

NXP

Datasheet
Download PESD3V3X1BCSF Datasheet


NXP PESD3V3X1BCSF

PESD3V3X1BCSF; diode capacitance Cd = 1.1 pF • ESD pr otection up to ±20 kV according to IEC 61000-4-2 • Ultra small SMD package 3. Applications ESD and surge protecti on for: • very sensitive interface li nes • generic interface lines in port able electronics, communication, consum er and computing devices. 4. Quick ref erence data Table 1. Symbol Cd VRWM Q uick reference data Paramet.


NXP PESD3V3X1BCSF

er diode capacitance reverse standoff vo ltage Conditions f = 1 MHz; VR = 0 V; Tamb = 25 °C Tamb = 25 °C Min Typ Ma x Unit - - 1.1 pF - - 3.3 V 5. Pinning information Table 2. Pin 1 2 Pinning information Symbol Description K1 cath ode (diode 1) K2 cathode (diode 2) Sim plified outline Graphic symbol 12 Tra nsparent top view DSN0603-2 (SOD962-2) 12 sym045 Scan or .


NXP PESD3V3X1BCSF

click this QR code to view the latest in formation for this product NXP Semicon ductors PESD3V3X1BCSF Ultra low capaci tance bidirectional ESD protection diod e 6. Ordering information Table 3. Or dering information Type number Packag e Name PESD3V3X1BCSF DSN0603-2 Desc ription Leadless ultra small package; 2 terminals; body 0.6 x 0.3 x 0.3 mm Ve rsion SOD962-2 7..

Part

PESD3V3X1BCSF

Description

Ultra low capacitance bidirectional ESD protection diode



Feature


PESD3V3X1BCSF Ultra low capacitance bid irectional ESD protection diode 17 Aug ust 2015 Product data sheet 1. Genera l description Ultra low capacitance bid irectional ElectroStatic Discharge (ESD ) protection diode a DSN0603-2 (SOD962) leadless ultra small Surface-Mounted D evice (SMD) package. 2. Features and b enefits • Bidirectional ESD protectio n of one line • Low .
Manufacture

NXP

Datasheet
Download PESD3V3X1BCSF Datasheet




 PESD3V3X1BCSF
PESD3V3X1BCSF
Ultra low capacitance bidirectional ESD protection diode
17 August 2015
Product data sheet
1. General description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode a
DSN0603-2 (SOD962) leadless ultra small Surface-Mounted Device (SMD) package.
2. Features and benefits
Bidirectional ESD protection of one line
Low diode capacitance Cd = 1.1 pF
ESD protection up to ±20 kV according to IEC 61000-4-2
Ultra small SMD package
3. Applications
ESD and surge protection for:
very sensitive interface lines
generic interface lines
in portable electronics, communication, consumer and computing devices.
4. Quick reference data
Table 1.
Symbol
Cd
VRWM
Quick reference data
Parameter
diode capacitance
reverse standoff
voltage
Conditions
f = 1 MHz; VR = 0 V; Tamb = 25 °C
Tamb = 25 °C
Min Typ Max Unit
- - 1.1 pF
- - 3.3 V
5. Pinning information
Table 2.
Pin
1
2
Pinning information
Symbol Description
K1 cathode (diode 1)
K2 cathode (diode 2)
Simplified outline
Graphic symbol
12
Transparent
top view
DSN0603-2 (SOD962-2)
12
sym045
Scan or click this QR code to view the latest information for this product




 PESD3V3X1BCSF
NXP Semiconductors
PESD3V3X1BCSF
Ultra low capacitance bidirectional ESD protection diode
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PESD3V3X1BCSF
DSN0603-2
Description
Leadless ultra small package; 2 terminals; body 0.6 x
0.3 x 0.3 mm
Version
SOD962-2
7. Marking
Table 4. Marking codes
Type number
PESD3V3X1BCSF
Marking code
P
PESD3V3X1BCSF
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved
2 / 12




 PESD3V3X1BCSF
NXP Semiconductors
PESD3V3X1BCSF
Ultra low capacitance bidirectional ESD protection diode
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
IPPM
rated peak pulse current
tp 8/20 µs
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
ESD maximum ratings
VESD
electrostatic discharge voltage IEC 61000-4-2; contact discharge
IEC 61000-4-2; air discharge
[1] According to IEC 61000-4-5 and IEC 61643-321.
[2] Device stressed with ten non-repetitive ESD pulses.
120
IPP
(%)
80
100 % IPP; 8 µs
e- t
001aaa630
IPP
100 %
90 %
50 % IPP; 20 µs
40
Min Max Unit
[1] -
8A
- 150 °C
-40 125 °C
-65 150 °C
[2] -
[2] -
20 kV
20 kV
001aaa631
0
0 10 20 30 40
t (µs)
Fig. 1. 8/20 µs pulse waveform according to
IEC 61000-4-5 and IEC 61643-321
10 %
tr = 0.6 ns to 1 ns
30 ns
60 ns
Fig. 2. ESD pulse waveform according to
IEC 61000-4-2
t
PESD3V3X1BCSF
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved
3 / 12



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