PESD5V0F1BRLD

DFN1006D-2 PESD5V0F1BRLD Femtofarad bidirectional ESD protection diode Rev. 1 — 30 January 2014 Product data sheet 1. Product profile 1.1 General description Femtofarad bidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is encapsulated in a leadless ultra small DFN1006D-2 (SOD882D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. The combination of extremely low capacitance, high ESD maximum rating and ultra small package makes the device ideal for high-speed data line protection and antenna protection applications. 1.2 Features and benefits  Bidirectional ESD protection of one line  ESD protection up to 10 kV (contact) and 15 kV (air)  Femtofarad capacitance: Cd = 400 fF  Low ESD clamping voltage: 30 V  IEC 61000-4-2; level 4 (ESD)  Package height typ. 0.37 mm at 30 ns and 8 kV  Very low leakage current: IRM < 1 nA  AEC-Q101 qualified 1.3 Applications  10/100/1000 Mbit/s Ethernet  FireWire  High-speed data lines  SIM card protection  Cellular handsets and accessories  Portable electronics  Communication systems  Computers and peripherals  Audio and video equipment  Antenna protection 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Per device VRWM Cd reverse standoff voltage diode capacitance Conditions f = 1 MHz; VR = 0 V Min Typ -- 0.4 Max Unit 5.5 V 0.55 pF NXP Sem...