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protection diode. PESD5V0R1BSF Datasheet

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protection diode. PESD5V0R1BSF Datasheet






PESD5V0R1BSF diode. Datasheet pdf. Equivalent




PESD5V0R1BSF diode. Datasheet pdf. Equivalent





Part

PESD5V0R1BSF

Description

Ultra low capacitance bidirectional ESD protection diode



Feature


PESD5V0R1BSF Ultra low capacitance bidi rectional ESD protection diode 7 May 2 015 Product data sheet 1. General des cription Ultra low capacitance bidirect ional ElectroStatic Discharge (ESD) pro tection diode, part of the TrEOS Protec tion family. This device is housed in a DSN0603-2 (SOD962) leadless ultra smal l Surface-Mounted Device (SMD) package. The TrEOS Protect.
Manufacture

NXP

Datasheet
Download PESD5V0R1BSF Datasheet


NXP PESD5V0R1BSF

PESD5V0R1BSF; ion family is optimized for safeguarding very sensitive high-speed interfaces a gainst ESD pulses with a high level of robustness. 2. Features and benefits Bidirectional ESD protection of one line • Extremely low diode capacitanc e Cd = 0.1 pF • ESD protection up to ±10 kV according to IEC 61000-4-2 • Ultra small SMD package 3. Application s ESD and surge protection .


NXP PESD5V0R1BSF

for: • ultra high-speed datalines • very sensitive interface lines • gene ric interface lines in portable electro nics, communication, consumer and compu ting devices. 4. Quick reference data Table 1. Symbol Cd VRWM Quick referen ce data Parameter diode capacitance rev erse standoff voltage Conditions f = 1 MHz; VR = 0 V; Tamb = 25 °C Tamb = 25 °C Min Typ Max Unit - 0.


NXP PESD5V0R1BSF

.1 0.15 pF - - 5V Scan or click this QR code to view the latest information fo r this product NXP Semiconductors PES D5V0R1BSF Ultra low capacitance bidirec tional ESD protection diode 5. Pinning information Table 2. Pinning informati on Pin Symbol Description 1 K cathode 2 K cathode Simplified outline Graphic symbol 12 Transparent top view DSN060 3-2 (SOD962-2) 12.

Part

PESD5V0R1BSF

Description

Ultra low capacitance bidirectional ESD protection diode



Feature


PESD5V0R1BSF Ultra low capacitance bidi rectional ESD protection diode 7 May 2 015 Product data sheet 1. General des cription Ultra low capacitance bidirect ional ElectroStatic Discharge (ESD) pro tection diode, part of the TrEOS Protec tion family. This device is housed in a DSN0603-2 (SOD962) leadless ultra smal l Surface-Mounted Device (SMD) package. The TrEOS Protect.
Manufacture

NXP

Datasheet
Download PESD5V0R1BSF Datasheet




 PESD5V0R1BSF
PESD5V0R1BSF
Ultra low capacitance bidirectional ESD protection diode
7 May 2015
Product data sheet
1. General description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode,
part of the TrEOS Protection family. This device is housed in a DSN0603-2 (SOD962)
leadless ultra small Surface-Mounted Device (SMD) package. The TrEOS Protection
family is optimized for safeguarding very sensitive high-speed interfaces against ESD
pulses with a high level of robustness.
2. Features and benefits
Bidirectional ESD protection of one line
Extremely low diode capacitance Cd = 0.1 pF
ESD protection up to ±10 kV according to IEC 61000-4-2
Ultra small SMD package
3. Applications
ESD and surge protection for:
ultra high-speed datalines
very sensitive interface lines
generic interface lines
in portable electronics, communication, consumer and computing devices.
4. Quick reference data
Table 1.
Symbol
Cd
VRWM
Quick reference data
Parameter
diode capacitance
reverse standoff
voltage
Conditions
f = 1 MHz; VR = 0 V; Tamb = 25 °C
Tamb = 25 °C
Min Typ Max Unit
- 0.1 0.15 pF
- - 5V
Scan or click this QR code to view the latest information for this product




 PESD5V0R1BSF
NXP Semiconductors
PESD5V0R1BSF
Ultra low capacitance bidirectional ESD protection diode
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 K cathode
2 K cathode
Simplified outline
Graphic symbol
12
Transparent
top view
DSN0603-2 (SOD962-2)
12
sym045
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PESD5V0R1BSF
DSN0603-2
Description
Leadless ultra small package; 2 terminals; body 0.6 x 0.3 x 0.3
mm
Version
SOD962-2
7. Marking
Table 4. Marking codes
Type number
PESD5V0R1BSF
Marking code
B
PESD5V0R1BSF
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
2 / 12




 PESD5V0R1BSF
NXP Semiconductors
PESD5V0R1BSF
Ultra low capacitance bidirectional ESD protection diode
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
IPPM
rated peak pulse current
tp = 8/20 µs
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
ESD maximum ratings
VESD
electrostatic discharge voltage IEC 61000-4-2; contact discharge
IEC 61000-4-2; air discharge
[1] According to IEC 61000-4-5 and IEC 61643-321.
[2] Device stressed with ten non-repetitive ESD pulses.
120
IPP
(%)
80
100 % IPP; 8 µs
e- t
001aaa630
IPP
100 %
90 %
50 % IPP; 20 µs
40
Min Max Unit
[1] -
4.5 A
- 150 °C
-40 125 °C
-65 150 °C
[2] -
[2] -
10 kV
15 kV
001aaa631
0
0 10 20 30 40
t (µs)
Fig. 1. 8/20 µs pulse waveform according to
IEC 61000-4-5 and IEC 61643-321
10 %
tr = 0.6 ns to 1 ns
30 ns
60 ns
Fig. 2. ESD pulse waveform according to
IEC 61000-4-2
t
PESD5V0R1BSF
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
3 / 12



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