DatasheetsPDF.com

protection diode. PESD5V0X2UMB Datasheet

DatasheetsPDF.com

protection diode. PESD5V0X2UMB Datasheet






PESD5V0X2UMB diode. Datasheet pdf. Equivalent




PESD5V0X2UMB diode. Datasheet pdf. Equivalent





Part

PESD5V0X2UMB

Description

Ultra low capacitance unidirectional double ESD protection diode



Feature


SOT883B PESD5V0X2UMB Ultra low capacit ance unidirectional double ESD protecti on diode 3 February 2014 Product dat a sheet 1. General description Ultra l ow capacitance unidirectional double El ectroStatic Discharge (ESD) protection diode in a DFN1006B-3 (SOT883B) leadles s ultra small Surface-Mounted Device (S MD) plastic package designed to protect up to two signal .
Manufacture

NXP

Datasheet
Download PESD5V0X2UMB Datasheet


NXP PESD5V0X2UMB

PESD5V0X2UMB; lines from the damage caused by ESD and other transients. 2. Features and bene fits • Ultra low diode capacitance: C d = 0.50 pF • Ultra low package heigh t of only 0.37 mm • ESD protection up to 10 kV; IEC61000-4-2 • IPPM = 1.5 A; IEC 61643-321 (surge) • AEC-Q101 q ualified 3. Applications • High-spee d data lines • Portable electronics Communication systems • Compute.


NXP PESD5V0X2UMB

rs and peripherals 4. Quick reference d ata Table 1. Quick reference data Sym bol Parameter Per diode Cd diode cap acitance VRWM reverse standoff voltag e Conditions f = 1 MHz; VR = 0 V [1] Measured from pin 1 or 2 to 3. Min Typ Max Unit [1] - 0.5 0.65 pF - 5V Sca n or click this QR code to view the lat est information for this product NXP S emiconductors PES.


NXP PESD5V0X2UMB

D5V0X2UMB Ultra low capacitance unidirec tional double ESD protection diode 5. Pinning information Table 2. Pinning in formation Pin Symbol Description 1 K1 c athode (diode 1) 2 K2 cathode (diode 2) 3 A common anode Simplified outline Graphic symbol 1 3 2 Transparent top v iew DFN1006B-3 (SOT883B) 1 2 3 brb051 6. Ordering information Table 3. Ord ering information .

Part

PESD5V0X2UMB

Description

Ultra low capacitance unidirectional double ESD protection diode



Feature


SOT883B PESD5V0X2UMB Ultra low capacit ance unidirectional double ESD protecti on diode 3 February 2014 Product dat a sheet 1. General description Ultra l ow capacitance unidirectional double El ectroStatic Discharge (ESD) protection diode in a DFN1006B-3 (SOT883B) leadles s ultra small Surface-Mounted Device (S MD) plastic package designed to protect up to two signal .
Manufacture

NXP

Datasheet
Download PESD5V0X2UMB Datasheet




 PESD5V0X2UMB
PESD5V0X2UMB
Ultra low capacitance unidirectional double ESD protection
diode
3 February 2014
Product data sheet
1. General description
Ultra low capacitance unidirectional double ElectroStatic Discharge (ESD) protection
diode in a DFN1006B-3 (SOT883B) leadless ultra small Surface-Mounted Device (SMD)
plastic package designed to protect up to two signal lines from the damage caused by
ESD and other transients.
2. Features and benefits
Ultra low diode capacitance: Cd = 0.50 pF
Ultra low package height of only 0.37 mm
ESD protection up to 10 kV; IEC61000-4-2
IPPM = 1.5 A; IEC 61643-321 (surge)
AEC-Q101 qualified
3. Applications
High-speed data lines
Portable electronics
Communication systems
Computers and peripherals
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per diode
Cd diode capacitance
VRWM
reverse standoff
voltage
Conditions
f = 1 MHz; VR = 0 V
[1] Measured from pin 1 or 2 to 3.
Min Typ Max Unit
[1] -
-
0.5 0.65 pF
- 5V
Scan or click this QR code to view the latest information for this product




 PESD5V0X2UMB
NXP Semiconductors
PESD5V0X2UMB
Ultra low capacitance unidirectional double ESD protection diode
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 K1 cathode (diode 1)
2 K2 cathode (diode 2)
3 A common anode
Simplified outline
Graphic symbol
1
3
2
Transparent
top view
DFN1006B-3 (SOT883B)
1
2
3
brb051
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PESD5V0X2UMB
DFN1006B-3
Description
DFN1006B-3: leadless ultra small plastic package; 3 solder
lands; body 1.0 x 0.6 x 0.37 mm
Version
SOT883B
7. Marking
Table 4. Marking codes
Type number
PESD5V0X2UMB
PIN 1 INDICATION
Marking code
0100 1110
READING DIRECTION
READING EXAMPLE:
0111
1011
READING DIRECTION
Fig. 1. DFN1006B-3 (SOT883B) binary marking code description
MARKING CODE
(EXAMPLE)
006aac673
PESD5V0X2UMB
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 February 2014
© NXP N.V. 2014. All rights reserved
2 / 13




 PESD5V0X2UMB
NXP Semiconductors
PESD5V0X2UMB
Ultra low capacitance unidirectional double ESD protection diode
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Per diode
IPPM
rated peak pulse current
tp = 8/20 µs
Tj junction temperature
Tstg storage temperature
Tamb
ambient temperature
ESD maximum ratings
VESD
electrostatic discharge voltage IEC 61000-4-2 (contact discharge)
IEC 61000-4-2 (air discharge)
machine model
MIL-STD-883 (human body model)
[1] According to IEC 61000-4-5 and IEC 61643-321.
[2] Measured from pin 1 or 2 to 3.
[3] Device stressed with ten non-repetitive ESD pulses.
120
IPP
(%)
80
100 % IPP; 8 µs
e- t
001aaa630
IPP
100 %
90 %
50 % IPP; 20 µs
40
Min Max Unit
[1][2]
-
-
-55
-65
1.5 A
150 °C
150 °C
150 °C
[3][2]
[3][2]
[2]
-
-
-
-
10 kV
15 kV
400 V
10 kV
001aaa631
0
0 10 20 30 40
t (µs)
Fig. 2. 8/20 µs pulse waveform according to
IEC 61000-4-5 and IEC 61643-321
10 %
tr = 0.6 ns to 1 ns
30 ns
60 ns
Fig. 3. ESD pulse waveform according to
IEC 61000-4-2
t
PESD5V0X2UMB
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 February 2014
© NXP N.V. 2014. All rights reserved
3 / 13



Recommended third-party PESD5V0X2UMB Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)