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protection diode. PESD5V0X2UM Datasheet

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protection diode. PESD5V0X2UM Datasheet






PESD5V0X2UM diode. Datasheet pdf. Equivalent




PESD5V0X2UM diode. Datasheet pdf. Equivalent





Part

PESD5V0X2UM

Description

Ultra low capacitance unidirectional double ESD protection diode



Feature


SOT883 PESD5V0X2UM Ultra low capacitan ce unidirectional double ESD protection diode 3 February 2014 Product data sheet 1. General description Ultra low capacitance unidirectional double Elec troStatic Discharge (ESD) protection di ode in a DFN1006-3 (SOT883) leadless ul tra small Surface-Mounted Device (SMD) plastic package designed to protect up to two signal line.
Manufacture

NXP

Datasheet
Download PESD5V0X2UM Datasheet


NXP PESD5V0X2UM

PESD5V0X2UM; s from the damage caused by ESD and othe r transients. 2. Features and benefits • Ultra low diode capacitance: Cd = 0.50 pF • ESD protection up to 10 kV; IEC61000-4-2 • IPPM = 1.5 A; IEC 616 43-321 (surge) • AEC-Q101 qualified 3. Applications • High-speed data lin es • Portable electronics • Communi cation systems • Computers and periph erals 4. Quick reference data Ta.


NXP PESD5V0X2UM

ble 1. Quick reference data Symbol Par ameter Per diode Cd diode capacitance VRWM reverse standoff voltage Condi tions f = 1 MHz; VR = 0 V [1] Measured from pin 1 or 2 to 3. Min Typ Max Uni t [1] - 0.5 0.65 pF - 5V Scan or cli ck this QR code to view the latest info rmation for this product NXP Semicondu ctors PESD5V0X2UM Ultra low capacitanc e unidirectional d.


NXP PESD5V0X2UM

ouble ESD protection diode 5. Pinning i nformation Table 2. Pinning information Pin Symbol Description 1 K1 cathode (d iode 1) 2 K2 cathode (diode 2) 3 A comm on anode Simplified outline 1 3 2 Tran sparent top view DFN1006-3 (SOT883) Gr aphic symbol 1 3 2 brb051 6. Ordering information Table 3. Ordering informat ion Type number Package Name PESD5V 0X2UM DFN1006-3 .

Part

PESD5V0X2UM

Description

Ultra low capacitance unidirectional double ESD protection diode



Feature


SOT883 PESD5V0X2UM Ultra low capacitan ce unidirectional double ESD protection diode 3 February 2014 Product data sheet 1. General description Ultra low capacitance unidirectional double Elec troStatic Discharge (ESD) protection di ode in a DFN1006-3 (SOT883) leadless ul tra small Surface-Mounted Device (SMD) plastic package designed to protect up to two signal line.
Manufacture

NXP

Datasheet
Download PESD5V0X2UM Datasheet




 PESD5V0X2UM
PESD5V0X2UM
Ultra low capacitance unidirectional double ESD protection
diode
3 February 2014
Product data sheet
1. General description
Ultra low capacitance unidirectional double ElectroStatic Discharge (ESD) protection
diode in a DFN1006-3 (SOT883) leadless ultra small Surface-Mounted Device (SMD)
plastic package designed to protect up to two signal lines from the damage caused by
ESD and other transients.
2. Features and benefits
Ultra low diode capacitance: Cd = 0.50 pF
ESD protection up to 10 kV; IEC61000-4-2
IPPM = 1.5 A; IEC 61643-321 (surge)
AEC-Q101 qualified
3. Applications
High-speed data lines
Portable electronics
Communication systems
Computers and peripherals
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per diode
Cd diode capacitance
VRWM
reverse standoff
voltage
Conditions
f = 1 MHz; VR = 0 V
[1] Measured from pin 1 or 2 to 3.
Min Typ Max Unit
[1] -
-
0.5 0.65 pF
- 5V
Scan or click this QR code to view the latest information for this product




 PESD5V0X2UM
NXP Semiconductors
PESD5V0X2UM
Ultra low capacitance unidirectional double ESD protection diode
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 K1 cathode (diode 1)
2 K2 cathode (diode 2)
3 A common anode
Simplified outline
1
3
2
Transparent
top view
DFN1006-3 (SOT883)
Graphic symbol
1
3
2
brb051
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PESD5V0X2UM
DFN1006-3
Description
Version
DFN1006-3: leadless ultra small plastic package; 3 solder lands SOT883
7. Marking
Table 4. Marking codes
Type number
PESD5V0X2UM
Marking code
ZH
PESD5V0X2UM
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 February 2014
© NXP N.V. 2014. All rights reserved
2 / 13




 PESD5V0X2UM
NXP Semiconductors
PESD5V0X2UM
Ultra low capacitance unidirectional double ESD protection diode
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Per diode
IPPM
rated peak pulse current
tp = 8/20 µs
Tj junction temperature
Tstg storage temperature
Tamb
ambient temperature
ESD maximum ratings
VESD
electrostatic discharge voltage IEC 61000-4-2 (contact discharge)
IEC 61000-4-2 (air discharge)
machine model
MIL-STD-883 (human body model)
[1] According to IEC 61000-4-5 and IEC 61643-321.
[2] Measured from pin 1 or 2 to 3.
[3] Device stressed with ten non-repetitive ESD pulses.
120
IPP
(%)
80
100 % IPP; 8 µs
e- t
001aaa630
IPP
100 %
90 %
50 % IPP; 20 µs
40
Min Max Unit
[1][2]
-
-
-55
-65
1.5 A
150 °C
150 °C
150 °C
[3][2]
[3][2]
[2]
-
-
-
-
10 kV
15 kV
400 V
10 kV
001aaa631
0
0 10 20 30 40
t (µs)
Fig. 1. 8/20 µs pulse waveform according to
IEC 61000-4-5 and IEC 61643-321
10 %
tr = 0.6 ns to 1 ns
30 ns
60 ns
Fig. 2. ESD pulse waveform according to
IEC 61000-4-2
t
PESD5V0X2UM
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 February 2014
© NXP N.V. 2014. All rights reserved
3 / 13



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