Document
WLCSP4
PMCM4401VNE
12V, N-channel Trench MOSFET
24 July 2015
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
2. Features and benefits
• Low threshold voltage • Ultra small package: 0.78 × 0.78 × 0.35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
• Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = 4.5 V; ID = 3 A; Tj = 25 °C
Min Typ Max Unit
- - 12 V
-8 -
8V
[1] - - 6 A
- 36 42 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
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NXP Semiconductors
PMCM4401VNE
12V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description
A1 G
gate
A2 S
source
B1 D
drain
B2 S
source
Simplified outline
12 A
B
Transparent top view
WLCSP4 (OLPMCM4401VNE)
Graphic symbol
D
G
S 017aaa255
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMCM4401VNE
WLCSP4
Description
WLCSP4: wafer level chip-size package; 4 bumps (2 x 2)
Version OL-PMCM4401VNE
7. Marking
Table 4. Marking codes Type number PMCM4401VNE
Marking code P
PIN A1 INDICATION
2
1
Fig. 1. WLCSP4 marking code description
AB Top view, balls down
MARKING CODE (EXAMPLE)
aaa-012880
PMCM4401VNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 July 2015
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NXP Semiconductors
PMCM4401VNE
12V, N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Source-drain diode
IS source current
Tsp = 25 °C Tamb = 25 °C
[1] [1] [1] [2] [1]
[1]
Min Max Unit - 12 V
-8 8
V
- 6A
- 4.7 A
- 3A
- 19 A
- 400 mW
- 1300 mW - 12500 mW
-55 150 °C
-55 150 °C
-65 150 °C
- 1.1 A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 Printed Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
PMCM4401VNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 July 2015
© NXP Semiconductors N.V. 2015. All rights reserved
3 / 15
NXP Semiconductors
120
Pder (%)
80
017aaa123
PMCM4401VNE
12V, N-channel Trench MOSFET
120
Ider (%)
80
017aaa124
40 40
0 - 75
- 25
25
75 125 175 Tj (°C)
Fig. 2. Normalized total power dissipation as a function of junction temperature
0 - 75 - 25
25
75 125 175 Tj (°C)
Fig. 3. Normalized continuous drain current as a function of junction temperature
102 ID (A)
10
Limit RDSon = VDS/ID
tp = 10 µs tp = 100 µs
aaa-019061
1 tp = 1 ms
10-1
DC; Tsp = 25 °C
DC; Tamb = 25 °C; drain mounting pad 6 cm2
tp = 10 ms tp = 100 ms
10-2 10-1
1
10 102 VDS (V)
IDM = single pulse
Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
9. Thermal characteristics
Table 6. Symbol Rth(j-a)
Thermal characteristics Parameter
thermal resistance from junction to ambient
PMCM4401VNE
Product data sheet
Conditions
in free air
[1]
[2]
[3]
in free air; t ≤ 5 s
[3]
All information provided in this document is subject to legal disclaimers.
24 July 2015
Min Typ Max Unit - 250 300 K/W - 70 85 K/W - 85 100 K/W - 50 60 K/W
© NXP Semiconductors N.V. 2015. All rights reserved
4 / 15
NXP Semiconductors
PMCM4401VNE
12V, N-channel Trench MOSFET
Symbol Rth(j-sp)
Parameter
Conditions
thermal resistance from junction to solder point
Min Typ Max Unit - 5 10 K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain, 4-layer, 1 cm2. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
103 aaa-013734
Zth(j-a) (K/W)
duty cycle = 1
0.75
0.50 102 0.33 0.25
0.20
0.10
0.05
10 0
0.02 0.01
1 10-3
10-2
FR4 PCB, standard footprint
10-1
1
10 1.