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PMCM4401VNE Dataheets PDF



Part Number PMCM4401VNE
Manufacturers NXP
Logo NXP
Description N-channel Trench MOSFET
Datasheet PMCM4401VNE DatasheetPMCM4401VNE Datasheet (PDF)

WLCSP4 PMCM4401VNE 12V, N-channel Trench MOSFET 24 July 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Ultra small package: 0.78 × 0.78 × 0.35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch.

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WLCSP4 PMCM4401VNE 12V, N-channel Trench MOSFET 24 July 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Ultra small package: 0.78 × 0.78 × 0.35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.5 V; ID = 3 A; Tj = 25 °C Min Typ Max Unit - - 12 V -8 - 8V [1] - - 6 A - 36 42 mΩ [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Scan or click this QR code to view the latest information for this product NXP Semiconductors PMCM4401VNE 12V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description A1 G gate A2 S source B1 D drain B2 S source Simplified outline 12 A B Transparent top view WLCSP4 (OLPMCM4401VNE) Graphic symbol D G S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name PMCM4401VNE WLCSP4 Description WLCSP4: wafer level chip-size package; 4 bumps (2 x 2) Version OL-PMCM4401VNE 7. Marking Table 4. Marking codes Type number PMCM4401VNE Marking code P PIN A1 INDICATION 2 1 Fig. 1. WLCSP4 marking code description AB Top view, balls down MARKING CODE (EXAMPLE) aaa-012880 PMCM4401VNE Product data sheet All information provided in this document is subject to legal disclaimers. 24 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 15 NXP Semiconductors PMCM4401VNE 12V, N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; Tamb = 100 °C IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tj junction temperature Tamb ambient temperature Tstg storage temperature Source-drain diode IS source current Tsp = 25 °C Tamb = 25 °C [1] [1] [1] [2] [1] [1] Min Max Unit - 12 V -8 8 V - 6A - 4.7 A - 3A - 19 A - 400 mW - 1300 mW - 12500 mW -55 150 °C -55 150 °C -65 150 °C - 1.1 A [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 Printed Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. PMCM4401VNE Product data sheet All information provided in this document is subject to legal disclaimers. 24 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 15 NXP Semiconductors 120 Pder (%) 80 017aaa123 PMCM4401VNE 12V, N-channel Trench MOSFET 120 Ider (%) 80 017aaa124 40 40 0 - 75 - 25 25 75 125 175 Tj (°C) Fig. 2. Normalized total power dissipation as a function of junction temperature 0 - 75 - 25 25 75 125 175 Tj (°C) Fig. 3. Normalized continuous drain current as a function of junction temperature 102 ID (A) 10 Limit RDSon = VDS/ID tp = 10 µs tp = 100 µs aaa-019061 1 tp = 1 ms 10-1 DC; Tsp = 25 °C DC; Tamb = 25 °C; drain mounting pad 6 cm2 tp = 10 ms tp = 100 ms 10-2 10-1 1 10 102 VDS (V) IDM = single pulse Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 9. Thermal characteristics Table 6. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient PMCM4401VNE Product data sheet Conditions in free air [1] [2] [3] in free air; t ≤ 5 s [3] All information provided in this document is subject to legal disclaimers. 24 July 2015 Min Typ Max Unit - 250 300 K/W - 70 85 K/W - 85 100 K/W - 50 60 K/W © NXP Semiconductors N.V. 2015. All rights reserved 4 / 15 NXP Semiconductors PMCM4401VNE 12V, N-channel Trench MOSFET Symbol Rth(j-sp) Parameter Conditions thermal resistance from junction to solder point Min Typ Max Unit - 5 10 K/W [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain, 4-layer, 1 cm2. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. 103 aaa-013734 Zth(j-a) (K/W) duty cycle = 1 0.75 0.50 102 0.33 0.25 0.20 0.10 0.05 10 0 0.02 0.01 1 10-3 10-2 FR4 PCB, standard footprint 10-1 1 10 1.


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