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Trench MOSFET. PMCM440VNE Datasheet

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Trench MOSFET. PMCM440VNE Datasheet






PMCM440VNE MOSFET. Datasheet pdf. Equivalent




PMCM440VNE MOSFET. Datasheet pdf. Equivalent





Part

PMCM440VNE

Description

N-channel Trench MOSFET



Feature


WLCSP4 PMCM440VNE 12 V, N-channel Trenc h MOSFET 7 April 2015 Product data she et 1. General description N-channel en hancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Siz e Package (WLCSP) using Trench MOSFET t echnology. 2. Features and benefits Low threshold voltage • Ultra small package: 0.78 × 0.78 × 0.35 mm • T rench MOSFET technology • .
Manufacture

NXP

Datasheet
Download PMCM440VNE Datasheet


NXP PMCM440VNE

PMCM440VNE; ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Relay driver • High-speed line driver • L ow-side loadswitch • Switching circui ts 4. Quick reference data Table 1. Q uick reference data Symbol Parameter VDS drain-source voltage VGS gate-sou rce voltage ID drain current Static c haracteristics RDSon drain-source on- state resistance Conditio.


NXP PMCM440VNE

ns Tj = 25 °C VGS = 4.5 V; Tamb = 25 ° C; t ≤ 5 s VGS = 4.5 V; ID = 3 A; Tj = 25 °C Min Typ Max Unit - - 12 V - 8 - 8V [1] - - 5 A - 57 67 mΩ [1] Device mounted on an FR4 Printed-Circui t Board (PCB), single-sided copper, tin -plated, mounting pad for drain 6 cm2. Scan or click this QR code to view the latest information for this product N XP Semiconductors PMCM4.


NXP PMCM440VNE

40VNE 12 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning i nformation Pin Symbol Description A1 G gate A2 S source B1 D drain B2 S source Simplified outline 12 A B Tra nsparent top view WLCSP4 (OLPMCM440VNE) Graphic symbol D G S 017aaa255 6. Ordering information Table 3. Orderin g information Type number Package Na me PMCM440VNE WL.

Part

PMCM440VNE

Description

N-channel Trench MOSFET



Feature


WLCSP4 PMCM440VNE 12 V, N-channel Trenc h MOSFET 7 April 2015 Product data she et 1. General description N-channel en hancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Siz e Package (WLCSP) using Trench MOSFET t echnology. 2. Features and benefits Low threshold voltage • Ultra small package: 0.78 × 0.78 × 0.35 mm • T rench MOSFET technology • .
Manufacture

NXP

Datasheet
Download PMCM440VNE Datasheet




 PMCM440VNE
PMCM440VNE
12 V, N-channel Trench MOSFET
7 April 2015
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level
Chip-Size Package (WLCSP) using Trench MOSFET technology.
2. Features and benefits
Low threshold voltage
Ultra small package: 0.78 × 0.78 × 0.35 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = 4.5 V; ID = 3 A; Tj = 25 °C
Min Typ Max Unit
- - 12 V
-8 -
8V
[1] - - 5 A
- 57 67 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
Scan or click this QR code to view the latest information for this product




 PMCM440VNE
NXP Semiconductors
PMCM440VNE
12 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
A1 G
gate
A2 S
source
B1 D
drain
B2 S
source
Simplified outline
12
A
B
Transparent top view
WLCSP4 (OL-
PMCM440VNE)
Graphic symbol
D
G
S
017aaa255
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMCM440VNE
WLCSP4
Description
WLCSP4: wafer level chip-size package; 4 bumps (2 x 2)
Version
OL-
PMCM440VNE
7. Marking
Table 4. Marking codes
Type number
PMCM440VNE
Marking code
M
PIN A1
INDICATION
2
1
Fig. 1. WLCSP4 marking code description
A
MARKING CODE
(EXAMPLE)
B aaa-012880
PMCM440VNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 April 2015
© NXP Semiconductors N.V. 2015. All rights reserved
2 / 15




 PMCM440VNE
NXP Semiconductors
PMCM440VNE
12 V, N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Source-drain diode
IS source current
Tsp = 25 °C
Tamb = 25 °C
[1]
[1]
[1]
[2]
[1]
[1]
Min Max Unit
- 12 V
-8 8
V
- 5A
- 3.9 A
- 15.5 A
- 16 A
- 400 mW
- 1300 mW
- 12500 mW
-55 150 °C
-55 150 °C
-65 150 °C
- 1.1 A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
[2] Device mounted on an FR4 Printed Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
PMCM440VNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 April 2015
© NXP Semiconductors N.V. 2015. All rights reserved
3 / 15



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