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Trench MOSFET. PMCM6501VNE Datasheet

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Trench MOSFET. PMCM6501VNE Datasheet






PMCM6501VNE MOSFET. Datasheet pdf. Equivalent




PMCM6501VNE MOSFET. Datasheet pdf. Equivalent





Part

PMCM6501VNE

Description

N-channel Trench MOSFET



Feature


WLCSP6 PMCM6501VNE 12 V, N-channel Tren ch MOSFET 26 August 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transist or (FET) in a 6 bumps Wafer Level Chip- Size Package (WLCSP) using Trench MOSFE T technology. 2. Features and benefits • Low threshold voltage • Ultra sm all package: 0.98 × 1.48 × 0.35 mm Trench MOSFET technology.
Manufacture

NXP

Datasheet
Download PMCM6501VNE Datasheet


NXP PMCM6501VNE

PMCM6501VNE; • ElectroStatic Discharge (ESD) prote ction > 2 kV HBM 3. Applications • R elay driver • High-speed line driver • Low-side loadswitch • Switching c ircuits 4. Quick reference data Table 1. Quick reference data Symbol Param eter VDS drain-source voltage VGS gat e-source voltage ID drain current Sta tic characteristics RDSon drain-sourc e on-state resistance Condi.


NXP PMCM6501VNE

tions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.5 V; ID = 3 A; Tj = 25 °C Min Typ Max Unit - - 12 V -8 - 8V [1] - - 9.6 A - 15 18 mΩ [1] Device mounted on an FR4 Printed-C ircuit Board (PCB), single-sided copper , tin-plated, mounting pad for drain 6 cm2. Scan or click this QR code to vie w the latest information for this produ ct NXP Semiconductors .


NXP PMCM6501VNE

PMCM6501VNE 12 V, N-channel Trench MOSFE T 5. Pinning information Table 2. Pin ning information Pin Symbol Description A1 G gate A2 S source B1 S sourc e B2 S source C1 D drain C2 D dra in Simplified outline 12 A B C Transpa rent top view WLCSP6 (OLPMCM6501VNE) G raphic symbol D G S 017aaa255 6. Or dering information Table 3. Ordering i nformation Type n.

Part

PMCM6501VNE

Description

N-channel Trench MOSFET



Feature


WLCSP6 PMCM6501VNE 12 V, N-channel Tren ch MOSFET 26 August 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transist or (FET) in a 6 bumps Wafer Level Chip- Size Package (WLCSP) using Trench MOSFE T technology. 2. Features and benefits • Low threshold voltage • Ultra sm all package: 0.98 × 1.48 × 0.35 mm Trench MOSFET technology.
Manufacture

NXP

Datasheet
Download PMCM6501VNE Datasheet




 PMCM6501VNE
PMCM6501VNE
12 V, N-channel Trench MOSFET
26 August 2015
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level
Chip-Size Package (WLCSP) using Trench MOSFET technology.
2. Features and benefits
Low threshold voltage
Ultra small package: 0.98 × 1.48 × 0.35 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = 4.5 V; ID = 3 A; Tj = 25 °C
Min Typ Max Unit
- - 12 V
-8 -
8V
[1] - - 9.6 A
- 15 18 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
Scan or click this QR code to view the latest information for this product




 PMCM6501VNE
NXP Semiconductors
PMCM6501VNE
12 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
A1 G
gate
A2 S
source
B1 S
source
B2 S
source
C1 D
drain
C2 D
drain
Simplified outline
12
A
B
C
Transparent top view
WLCSP6 (OL-
PMCM6501VNE)
Graphic symbol
D
G
S
017aaa255
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMCM6501VNE
WLCSP6
Description
WLCSP6: wafer level chip-size package; 6 bumps (3 x
2)
Version
OL-PMCM6501VNE
7. Marking
Table 4. Marking codes
Type number
PMCM6501VNE
Marking code
AC
PIN A1
INDICATION
2
1
Fig. 1. WLCSP6 marking code description
AB
Top view, balls down
C
MARKING CODE
(EXAMPLE)
aaa-013901
PMCM6501VNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved
2 / 15




 PMCM6501VNE
NXP Semiconductors
PMCM6501VNE
12 V, N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Source-drain diode
IS source current
Tsp = 25 °C
Tamb = 25 °C
[1]
[1]
[1]
[2]
[1]
[1]
Min Max Unit
- 12 V
-8 8
V
- 9.6 A
- 7.3 A
- 4.6 A
- 29 A
- 556 mW
- 1300 mW
- 12500 mW
-55 150 °C
-55 150 °C
-65 150 °C
- 1.2 A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
[2] Device mounted on an FR4 Printed Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
PMCM6501VNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved
3 / 15



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