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Trench MOSFET. PMCM6501VPE Datasheet

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Trench MOSFET. PMCM6501VPE Datasheet






PMCM6501VPE MOSFET. Datasheet pdf. Equivalent




PMCM6501VPE MOSFET. Datasheet pdf. Equivalent





Part

PMCM6501VPE

Description

P-channel Trench MOSFET



Feature


WLCSP6 PMCM6501VPE 12 V, P-channel Tren ch MOSFET 10 August 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transist or (FET) in a 6 bumps Wafer Level Chip- Size Package (WLCSP) using Trench MOSFE T technology. 2. Features and benefits • Low threshold voltage • Ultra sm all package: 0.98 × 1.48 × 0.35 mm Trench MOSFET technology.
Manufacture

NXP

Datasheet
Download PMCM6501VPE Datasheet


NXP PMCM6501VPE

PMCM6501VPE; • ElectroStatic Discharge (ESD) prote ction > 2 kV HBM 3. Applications • B attery switch • High-speed line drive r • Low-side loadswitch • Switching circuits 4. Quick reference data Tab le 1. Quick reference data Symbol Par ameter Conditions Min Typ Max Unit V DS drain-source voltage Tj = 25 °C - - -12 V VGS gate-source voltage -8 - 8V ID drain current VGS =.


NXP PMCM6501VPE

-4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -8.2 A Static characteristics RDSon drain-source on-state VGS = -4.5 V; I D = -3.0 A; Tj = 25 °C resistance - 1 9 25 mΩ [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sid ed copper, tin-plated, mounting pad for drain 6 cm2. Scan or click this QR co de to view the latest information for t his product NXP Semico.


NXP PMCM6501VPE

nductors PMCM6501VPE 12 V, P-channel Tr ench MOSFET 5. Pinning information Ta ble 2. Pinning information Pin Symbol D escription A1 G gate A2 S source B 1 S source B2 S source C1 D drain C2 D drain Simplified outline 12 A B C Transparent top view WLCSP6 (OLPMCM6 501VPE) Graphic symbol D G S 017aaa 259 6. Ordering information Table 3. Ordering informati.

Part

PMCM6501VPE

Description

P-channel Trench MOSFET



Feature


WLCSP6 PMCM6501VPE 12 V, P-channel Tren ch MOSFET 10 August 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transist or (FET) in a 6 bumps Wafer Level Chip- Size Package (WLCSP) using Trench MOSFE T technology. 2. Features and benefits • Low threshold voltage • Ultra sm all package: 0.98 × 1.48 × 0.35 mm Trench MOSFET technology.
Manufacture

NXP

Datasheet
Download PMCM6501VPE Datasheet




 PMCM6501VPE
PMCM6501VPE
12 V, P-channel Trench MOSFET
10 August 2015
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level
Chip-Size Package (WLCSP) using Trench MOSFET technology.
2. Features and benefits
Low threshold voltage
Ultra small package: 0.98 × 1.48 × 0.35 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
Battery switch
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C
- - -12 V
VGS gate-source voltage
-8 -
8V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -8.2 A
Static characteristics
RDSon
drain-source on-state VGS = -4.5 V; ID = -3.0 A; Tj = 25 °C
resistance
- 19 25 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
Scan or click this QR code to view the latest information for this product




 PMCM6501VPE
NXP Semiconductors
PMCM6501VPE
12 V, P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
A1 G
gate
A2 S
source
B1 S
source
B2 S
source
C1 D
drain
C2 D
drain
Simplified outline
12
A
B
C
Transparent top view
WLCSP6 (OL-
PMCM6501VPE)
Graphic symbol
D
G
S
017aaa259
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMCM6501VPE
WLCSP6
Description
WLCSP6: wafer level chip-size package; 6 bumps
(3 x 2)
Version
OL-PMCM6501VPE
7. Marking
Table 4. Marking codes
Type number
PMCM6501VPE
Marking code
AD
PIN A1
INDICATION
2
1
Fig. 1. WLCSP6 marking code description
AB
Top view, balls down
C
MARKING CODE
(EXAMPLE)
aaa-013901
PMCM6501VPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved
2 / 15




 PMCM6501VPE
NXP Semiconductors
PMCM6501VPE
12 V, P-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Source-drain diode
IS source current
Tsp = 25 °C
Tamb = 25 °C
[1]
[1]
[1]
[2]
[1]
[1]
Min Max Unit
- -12 V
-8 8
V
- -8.2 A
- -6.2 A
- -4 A
- -25 A
- 556 mW
- 1300 mW
- 12500 mW
-55 150 °C
-55 150 °C
-65 150 °C
- -1.2 A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
PMCM6501VPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved
3 / 15



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