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State Relay. RDHA710SE10A2SK Datasheet

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State Relay. RDHA710SE10A2SK Datasheet






RDHA710SE10A2SK Relay. Datasheet pdf. Equivalent




RDHA710SE10A2SK Relay. Datasheet pdf. Equivalent





Part

RDHA710SE10A2SK

Description

Solid State Relay



Feature


PD-96982 Radiation Hardended, Solid-Sta te Relay with Buffered Inputs RDHA710S E10A2SK Dual, 100V, 10A gProduct Summa ry Part Number Breakdown Voltage RDH A710SE10A2SK 100V Current 10A tr / t f Logic Drive Voltage Controlled 3.3V 8-PIN SURFACE MOUNT Description The RDHA710SE10A2SK is a radiation hardened dual solid-state relay in a hermetic p ackage. It is conf.
Manufacture

International Rectifier

Datasheet
Download RDHA710SE10A2SK Datasheet


International Rectifier RDHA710SE10A2SK

RDHA710SE10A2SK; igured as a dual, single-pole-single-thr ow (SPST) normally open relay with comm on input supply. This device is charact erized for 100 krad(Si) total ionizing dose, and neutron fluence level of 1.8E 12 n/cm2. The input and output MOSFETs utilize International Rectifier’s R5 technology. The RDHA710SE10A2SK is opti cally coupled and actuated by standard logic inputs. Featu.


International Rectifier RDHA710SE10A2SK

res: n Total Dose Capability to 100 krad (Si) n Neutron Fluence Level of 1.8E12 n/cm2 n Optically Coupled n 1000VDC Inp ut to Output Isolation n Buffered Input Stage n 3.3V Compatible Logic Level In put n Controlled Switching Times n Herm etically Sealed Package Absolute Maxim um Ratings per Channel @ Tj=25°C (unle ss otherwise specified) Parameter gOut put Maximum Voltage.


International Rectifier RDHA710SE10A2SK

f gOutput Current eInput Buffer Voltage - (pins 4 & 6) Input Buffer Current i Input Supply Voltage (pin 5) iÃInput Supply Current fgPower Dissipation Oper ating Temperature Range Storage Tempera ture Range Lead Temperature Symbol VS IO VIN IIN VDD IDD PDISS TJ TS TL Valu e 100 12 ±7.5 ±10 10 25 60 -55 to +12 5 -65 to +150 300 Units V A V mA V mA W °C For notes, pleas.

Part

RDHA710SE10A2SK

Description

Solid State Relay



Feature


PD-96982 Radiation Hardended, Solid-Sta te Relay with Buffered Inputs RDHA710S E10A2SK Dual, 100V, 10A gProduct Summa ry Part Number Breakdown Voltage RDH A710SE10A2SK 100V Current 10A tr / t f Logic Drive Voltage Controlled 3.3V 8-PIN SURFACE MOUNT Description The RDHA710SE10A2SK is a radiation hardened dual solid-state relay in a hermetic p ackage. It is conf.
Manufacture

International Rectifier

Datasheet
Download RDHA710SE10A2SK Datasheet




 RDHA710SE10A2SK
PD-96982
Radiation Hardended,
Solid-State Relay
with Buffered Inputs
RDHA710SE10A2SK
Dual, 100V, 10A
gProduct Summary
Part
Number
Breakdown
Voltage
RDHA710SE10A2SK
100V
Current
10A
tr / tf Logic Drive
Voltage
Controlled
3.3V
8-PIN SURFACE MOUNT
Description
The RDHA710SE10A2SK is a radiation hardened
dual solid-state relay in a hermetic package. It is
configured as a dual, single-pole-single-throw
(SPST) normally open relay with common input
supply. This device is characterized for 100 krad(Si)
total ionizing dose, and neutron fluence level of
1.8E12 n/cm2. The input and output MOSFETs utilize
International Rectifier’s R5 technology. The
RDHA710SE10A2SK is optically coupled and
actuated by standard logic inputs.
Features:
n Total Dose Capability to 100 krad(Si)
n Neutron Fluence Level of 1.8E12 n/cm2
n Optically Coupled
n 1000VDC Input to Output Isolation
n Buffered Input Stage
n 3.3V Compatible Logic Level Input
n Controlled Switching Times
n Hermetically Sealed Package
Absolute Maximum Ratings per Channel @ Tj=25°C (unless otherwise specified)
Parameter
gOutput Maximum Voltage
f gOutput Current
eInput Buffer Voltage - (pins 4 & 6)
Input Buffer Current
Input Supply Voltage (pin 5)
Input Supply Current
fgPower Dissipation
Operating Temperature Range
Storage Temperature Range
Lead Temperature
Symbol
VS
IO
VIN
IIN
VDD
IDD
PDISS
TJ
TS
TL
Value
100
12
±7.5
±10
10
25
60
-55 to +125
-65 to +150
300
Units
V
A
V
mA
V
mA
W
°C
For notes, please refer to page 3
www.irf.com
1
03/29/06




 RDHA710SE10A2SK
RDHA710SE10A2SK
General Characteristics per Channel @ -55°CdTCd+125°C (Unless Otherwise Specified)
Parameter
Group A
Test Conditions
Subgroups
ceInput Buffer Threshold Voltage
VDD = 5.0V, IO= 10A
Input-to-Output Leakage Current
1 VI-O = 1.0KVdc, dwell = 5.0s
cOutput Capacitance
cThermal Resistance
VIN = 0.1V, f = 1.0MHz, VS =25V
TC = 25°C
c fVIN = 3.3V, VDD = 5.0V ,
MTBF (Per Channel)
MIL-HDBK-217F, SF@Tc= 25°C
Symbol Min.
VIN(TH)
II-O
COSS
RTHJC
3.0
--
--
--
6.0
Typ.
--
--
365
--
--
Max. Units
-- V
1.0 µA
-- pF
1.7 °C/W
-- MHrs
Pre-Irradiation
Electrical Characteristics per Channel @ -55°CdTCd+125°C (Unless Otherwise Specified)
Parameter
Output On-Resistance
Output Leakage Current
Input Supply Current
Input Buffer Current
hTurn-On Delay
hTurn-Off Delay
d hRise Time ,
d hFall Time ,
Group A
Test Conditions
Subgroups
1
2
1
2
1,2,3
1
2,3
VIN = 3.3V
VDD = 5.0V, IO= 10A
VIN = 0.1V, VS = 100V
VIN = 0.1V, VS = 80V
VDD = 5.0V, IO= 10A
c iVDD = 10V, IO= 10A ‚
VIN = 3.3V
1,2,3
1,2,3
VIN =3.3V, VDD =5.0V, VS =30V
RC = 7.0/100µF, PW = 50ms
VIN =0.1V, VDD =5.0V, VS =30V
RC = 7.0/100µF, PW = 50ms
1,2,3
1,2,3
VIN =3.3V, VDD =5.0V, VS =30V
RC = 7.0/100µF, PW = 50ms
VIN =0.1V, VDD =5.0V, VS =30V
RC = 7.0/100µF, PW = 50ms
Symbol Min. Typ. Max. Units
-- 0.070 0.100
RDS(ON) -- 0.125 0.165
IO
--
--
--
--
25
250
µA
IDD
--
--
10
--
15
25
mA
IIN
--
--
--
--
1.0
3.0
µA
ton -- 6.5 25
toff -- 25 50
ms
tr -- 1.3 6.0
tf -- 5.5 18
For notes, please refer to page 3
2
www.irf.com




 RDHA710SE10A2SK
RDHA710SE10A2SK
Post Total Dose Irradiation ˆ,‰,Š
Electrical Characteristics per Channel @ 25°C (Unless Otherwise Specified)
Parameter
Output On-Resistance
Input Supply Current
Output Leakage Current
Input Buffer Current
hTurn-On Delay
hTurn-Off Delay
dhRise Time
dhFall Time
Group A
Test Conditions
Subgroups
1 VIN = 3.3V, VDD = 5.0V, IO= 10A
1 VDD = 5.0V, IO= 10A
1 VIN = 0.1V, VS = 100V
1 VIN = 3.3V
1
VIN =3.3V, VDD =5.0V, VS =30V
RC = 7.0/100µF, PW = 50ms
1 VIN =0.1V, VDD =5.0V, VS =30V
RC = 7.0/100µF, PW = 50ms
1 VIN =3.3V, VDD =5.0V, VS =30V
RC = 7.0/100µF, PW = 50ms
1 VIN =0.1V, VDD =5.0V, VS =30V
RC = 7.0/100µF, PW = 50ms
Symbol Min.
RDS(ON)
IDD
IO
IIN
ton
--
--
--
--
--
toff --
tr --
tf --
Typ. Max. Units
0.070 0.100
10 15
-- 25
-- 1.0
mA
µA
6.5 25
25 50
ms
1.3 6.0
5.5 18
Notes for Maximum Ratings and Electrical Characteristic Tables
 Specification is guaranteed by design
‚ Rise and fall times are controlled internally
ƒ Inputs protected for VIN< 1.0V and VIN > 7.5V
m Optically coupled Solid State Relays (SSRs) have relatively slow turn on and turn off times. Care must be taken to
insure that transient currents do not cause violation of SOA. If transient conditions are present, IR recommends a
complete simulation to be performed by the end user to insure compliance with SOA requirements as specified in the
IRHNJ57130 data sheet
n While the SSR design meets the design requirements specified in MIL-PRF-38534, the end user is responsible for
product derating, as required for the application
o Reference Figures 3 & 4 for Switching Test Circuits and Wave Form
‡ Input Supply voltage shall not exceed 5.25V@Tc 70°C
ˆ Total Dose Irradiation with Input Bias. 10mA IDD applied and VDS = 0 during Irradiation
‰ Total Dose Irradiation with Output Bias. 80 Volts VDS applied and IDD = 0 during Irradiation
Š International Rectifier does not currently have a DSCC certified Radiation Hardness Assurance Program
www.irf.com
3



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