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Photodiode. SDN136 Datasheet

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Photodiode. SDN136 Datasheet






SDN136 Photodiode. Datasheet pdf. Equivalent




SDN136 Photodiode. Datasheet pdf. Equivalent





Part

SDN136

Description

Photodiode



Feature


SDN136 Analog High Speed Optocoupler 1MB d, Photodiode with Transistor Output D escription The SDN136 is a high speed o ptocoupler consisting of an infrared Ga As LED optically coupled through a high isolation barrier to an integrated hig h speed transistor and photodiode. Sepa rate access to the photodiode and trans istor allow users to reduce base-collec tor capacitance, e.
Manufacture

Solid State Optronic

Datasheet
Download SDN136 Datasheet


Solid State Optronic SDN136

SDN136; nabling much higher switching speeds. Si gnals with frequencies of up to 2.0MHz can be switched, giving the SDN136 a mu ch broader application range than tradi tional optocouplers. The SDN136 comes s tandard in an 8 pin DIP package. Applic ations High Speed Logic Ground Isolati on Replace Slower Speed Optocouplers Line Receivers Power Transistor Isolat ion Pulse Transfo.


Solid State Optronic SDN136

rmer Replacement Switch Mode Power Supp lies High Voltage Insulation Ground I solation – Analog Signals Schematic D iagram NC 1 8 VCC Anode 2 7 VB Cat hode 3 6 VO NC 4 5 Ground SDN136 T ruth Table (Positive Logic) LED ON OFF VO LOW HIGH ** A 0.1μF bypass Capac itor must be connected between pins 5 & 8 (GND & VCC) Features TTL Compatibl e High Bit Rate: 1Mb.


Solid State Optronic SDN136

/s Bandwidth: 2.0MHz Open Collector Ou tput High Isolation Voltage (5000VRMS) High Common Mode Interference Immunit y RoHS / Pb-Free / REACH Compliant Ag ency Approvals UL / C-UL: VDE: File # E201932 File # 40035191 (EN 60747-5-2) Absolute Maximum Ratings The values i ndicated are absolute stress ratings. F unctional operation of the device is no t implied at these.

Part

SDN136

Description

Photodiode



Feature


SDN136 Analog High Speed Optocoupler 1MB d, Photodiode with Transistor Output D escription The SDN136 is a high speed o ptocoupler consisting of an infrared Ga As LED optically coupled through a high isolation barrier to an integrated hig h speed transistor and photodiode. Sepa rate access to the photodiode and trans istor allow users to reduce base-collec tor capacitance, e.
Manufacture

Solid State Optronic

Datasheet
Download SDN136 Datasheet




 SDN136
SDN136
Analog High Speed Optocoupler
1MBd, Photodiode with Transistor Output
Description
The SDN136 is a high speed optocoupler consisting of an
infrared GaAs LED optically coupled through a high
isolation barrier to an integrated high speed transistor and
photodiode.
Separate access to the photodiode and transistor allow
users to reduce base-collector capacitance, enabling much
higher switching speeds. Signals with frequencies of up to
2.0MHz can be switched, giving the SDN136 a much
broader application range than traditional optocouplers.
The SDN136 comes standard in an 8 pin DIP package.
Applications
High Speed Logic Ground Isolation
Replace Slower Speed Optocouplers
Line Receivers
Power Transistor Isolation
Pulse Transformer Replacement
Switch Mode Power Supplies
High Voltage Insulation
Ground Isolation – Analog Signals
Schematic Diagram
NC 1
8 VCC
Anode 2
7 VB
Cathode 3
6 VO
NC 4
5 Ground
SDN136
Truth Table
(Positive Logic)
LED
ON
OFF
VO
LOW
HIGH
** A 0.1μF bypass Capacitor must be connected between pins 5 & 8
(GND & VCC)
Features
TTL Compatible
High Bit Rate: 1Mb/s
Bandwidth: 2.0MHz
Open Collector Output
High Isolation Voltage (5000VRMS)
High Common Mode Interference Immunity
RoHS / Pb-Free / REACH Compliant
Agency Approvals
UL / C-UL:
VDE:
File # E201932
File # 40035191 (EN 60747-5-2)
Absolute Maximum Ratings
The values indicated are absolute stress ratings. Functional
operation of the device is not implied at these or any
conditions in excess of those defined in electrical
characteristics section of this document. Exposure to
absolute Maximum Ratings may cause permanent damage
to the device and may adversely affect reliability.
Storage Temperature …………………………..-55 to +125°C
Operating Temperature …………………………-40 to +85°C
Continuous Input Current ………………………………..40mA
Transient Input Current ………………….……………..400mA
Reverse Input Control Voltage …………..…………………5V
Input Power Dissipation…………………………………40mW
Peak Output Current (Pin 6) …………………………….16mA
Max Emitter-Base Reverse Voltage (Pin 5-7)……………..5V
Max Supply Voltage (Pin 8-5) ……………………………..15V
Max Output Voltage (Pin 6-5) ……………………………..15V
Max Base Current (Pin 7) …………………………………5mA
Output Power Dissipation ……………………………..100mW
Ordering Information
Part Number Description
SDN136
SDN136-H
SDN136-S
SDN136-STR
8 pin DIP, (50/Tube)
0.40” (10.16mm) Lead Spacing (VDE0884)
8 pin SMD, (50/Tube)
8 pin SMD, Tape and Reel (1000/Reel)
NOTE: Suffixes listed above are not included in marking on
device for part number identification
© 2012 Solid State Optronics San José, CA
www.ssousa.com +1.408.293.4600
Page # 1
SDN136/H/S/TR
Rev 1.10 (08/09/2012)
001511




 SDN136
Electrical Characteristics, TA = 25°C (unless otherwise specified)
SDN136
Analog High Speed Optocoupler
1MBd, Photodiode with Transistor Output
Parameter
Symbol Min. Typ.
Input Specifications
LED Forward Voltage
LED Reverse Voltage
VF - 1.4
BVR 5 -
Detector Specifications
Current Transfer Ratio 1
CTR
19 24
Logic Low Output Voltage
Logic High Output Current
Logic Low Supply Current 2
Logic High Supply Current 2
Offset Voltage
VOL - 0.25
IOH - -
ICCL - 400
ICCH
--
Switching Specifications, TA = 0~70°C, VCC = 5V (unless otherwise specified)
Propagation Delay Time to
Low Output Level 3
tPHL - 0.1
Propagation Delay Time to
High Output Level 3
tPLH - 0.4
Logic High Common Mode Transient
Immunity 3
|CMH| 1 -
Logic High Common Mode Transient
Immunity 3
|CML| 1 -
Coupled Capacitance
Contact Transient Ratio
Isolation Specifications
Input-Output Insulation Leakage Current
Withstand Insulation Test Voltage
Input-Output Resistance
II-O
VISO
RI-O
-
5000
-
-
-
1012
Max.
1.7
-
50
0.4
1
-
1
0.8
0.8
-
-
1.0
-
-
Units Test Conditions
V IF = 16mA
V IR = 10μA
% IF=16mA, VCC=4.5V, VO=0.4V
V IF=0mA, VO=VCC=4.5V, IO=3mA
A IF=0mA, VO=VCC=5.5V
A IF=16mA, VO=OPEN (VCC=15V)
A IF=0mA, VO=OPEN (VCC=15V)
S TA=25°C (RL=1.9K, IF=16mA)
S TA=25°C (RL=1.9K, IF=16mA)
KV/ S IF=0mA, VCM=10VP-P, RL=1.9K
KV/ S IF=16mA, VCM=10VP-P, RL=1.9K
S
S
μA
VRMS

45% RH, t=5s, VI-O=3kV
RH 50%, t=1min
VI-O = 500VDC
Notes
1. Current Transfer Ratio (CTR) as a percentage is defined as the ratio of output collector current (IO) to the forward LED input current (IF)
times 100
2. A 0.1µF or bigger bypass capacitor for VCC is needed as shown in Figure 1 on following page
3. The 1.9Kload represents 1TTL unit load of 1.6mA and the 5.6Kpull-up resistor.
© 2012 Solid State Optronics San José, CA
www.ssousa.com +1.408.293.4600
Page # 2
SDN136/H/S/TR
Rev 1.10 (08/09/2012)
001511




 SDN136
SDN136 Electrical Test Circuits
SDN136
Analog High Speed Optocoupler
1MBd, Photodiode with Transistor Output
Figure 1: Single Channel Test Circuit for tPHL and tPLH
Figure 2: Single Channel Test Circuit for Common Mode Transient Immunity
© 2012 Solid State Optronics San José, CA
www.ssousa.com +1.408.293.4600
Page # 3
SDN136/H/S/TR
Rev 1.10 (08/09/2012)
001511



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