Silicon Power Schottky Diode
Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive
MBRF1...
Silicon Power
Schottky Diode
Features High Surge Capability Types from 45 V to 100 V VRRM Not ESD Sensitive
MBRF12045 thru MBRF120100R
VRRM = 45 V - 100 V IF(AV) = 120 A
TO-244AB Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBRF12045(R) MBRF12060(R) MBRF12080(R) MBRF120100(R) Unit
Repetitive peak reverse voltage RMS reverse voltage
DC blocking voltage Operating temperature Storage temperature
VRRM
VRMS VDC Tj Tstg
45
32 45 -55 to 150 -55 to 150
60
42 60 -55 to 150 -55 to 150
80
57 80 -55 to 150 -55 to 150
100
70 100 -55 to 150 -55 to 150
V
V V °C °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBRF12045(R) MBRF12060(R) MBRF12080(R) MBRF120100(R) Unit
Average forward current (per pkg)
IF(AV)
TC = 125 °C
120
120
120
120 A
Peak forward surge current (per leg)
IFSM tp = 8.3 ms, half sine
800
800
800
800 A
Maximum forward voltage (per leg)
VF IFM = 60 A, Tj = 25 °C
0.70
0.75
0.84
0.84 V
Reverse current at rated DC blocking voltage (per leg)
IR
Tj = 25 °C Tj = 100 °C
1 10
1 10
1 10
1 10 mA
Tj = 150 °C
30
30
30
30
Thermal characteristics
Thermal resistance, junctioncase (per leg)
RΘJC
0.80 0.80 0.80 0.80 °C/W
www.genesicsemi.com/silicon-products/
schottky-rectifiers/
1
MBRF12045 thru MBRF120100R
www.genesicsemi.com/silicon-products/
schottky-rectifiers/
2
MBRF12045 thru MBRF120100R
Pack...
