MBRF300150R

Silicon Power Schottky Diode Features High Surge Capability Types from 150 V to 200 V VRRM Not ESD Sensitive MBRF300150 thru MBRF300200R VRRM = 150 V - 200 V IF(AV) = 300 A TO-244AB Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBRF300150(R) MBRF300200(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 150 106 150 -55 to 150 -55 to 150 200 141 200 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MBRF300150(R) Average forward current (per pkg) Peak forward surge current (per leg) Maximum forward voltage (per leg) Reverse current at rated DC blocking voltage (per leg) Thermal characteristics Thermal resistance, junction-case (per leg) IF(AV) IFSM VF IR RΘJC TC = 125 °C tp = 8.3 ms, half sine IFM = 150 A, Tj = 25 °C Tj = 25 °C Tj = 100 °C Tj = 150 °C 300 2000 0.88 1 10 30 0.40 MBRF300200(R) 300 2000 0.92 1 10 30 0.40 Unit V V V °C °C Unit A A V mA °C/W www.genesicsemi.com/silicon-products/schottky-rectifiers/ 1 MBRF300150 thru MBRF300200R www.genesicsemi.com/silicon-products/schottky-rectifiers/ 2 MBRF300150 thru MBRF300200R Package dimensions and terminal configuration Product is marked with part number and terminal configuration. www.genesicsemi.com/silicon-products/schottky-rectifiers/ 3 ...