Silicon Power Schottky Diode
Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive
MBRF5...
Silicon Power
Schottky Diode
Features High Surge Capability Types from 45 V to 100 V VRRM Not ESD Sensitive
MBRF50045 thru MBRF500100R
VRRM = 45 V - 100 V IF(AV) = 500 A
TO-244AB Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBRF50045(R) MBRF50060(R) MBRF50080(R) MBRF500100(R) Unit
Repetitive peak reverse voltage RMS reverse voltage
DC blocking voltage Operating temperature Storage temperature
VRRM
VRMS VDC Tj Tstg
45
32 45 -55 to 150 -55 to 150
60
42 60 -55 to 150 -55 to 150
80
57 80 -55 to 150 -55 to 150
100
70 100 -55 to 150 -55 to 150
V
V V °C °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBRF50045(R) MBRF50060(R) MBRF50080(R) MBRF500100(R) Unit
Average forward current (per pkg) Peak forward surge current (per leg)
Maximum forward voltage (per leg)
Reverse current at rated DC blocking voltage (per leg)
Thermal characteristics Thermal resistance, junctioncase (per leg)
IF(AV) IFSM VF IR
RΘJC
TC = 125 °C
tp = 8.3 ms, half sine
IFM = 250 A, Tj = 25 °C Tj = 25 °C Tj = 100 °C Tj = 150 °C
500
3500
0.75 1 10 50
0.30
500
3500
0.78 1 10 50
0.30
500
3500
0.84 1 10 50
0.30
500
3500
0.84 1 10 50
0.30
A A V mA
°C/W
www.genesicsemi.com/silicon-products/
schottky-rectifiers/
1
MBRF50045 thru MBRF500100R
www.genesicsemi.com/silicon-products/
schottky-rectifiers/
2
MBRF50045 thru MBRF500100R
Package dimensions and ter...