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PESD5V0U1BLD

NXP

Ultra low capacitance bidirectional ESD protection diode

PESD5V0U1BLD Ultra low capacitance bidirectional ESD protection diode Rev. 2 — 27 July 2011 Product data sheet 1. Pr...


NXP

PESD5V0U1BLD

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Description
PESD5V0U1BLD Ultra low capacitance bidirectional ESD protection diode Rev. 2 — 27 July 2011 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 1.2 Features and benefits  Bidirectional ESD protection of one line  AEC-Q101 qualified  Ultra small SMD plastic package  ESD protection up to 10 kV  Solderable side pads  IEC 61000-4-2; level 4 (ESD)  Package height typ. 0.37 mm  Ultra low leakage current: IRM = 5 nA  Ultra low diode capacitance Cd = 2.9 pF 1.3 Applications  Computers and peripherals  Audio and video equipment  Cellular handsets and accessories  High-speed data lines  Communication systems  Portable electronics 1.4 Quick reference data Table 1. Symbol VRWM Cd Quick reference data Parameter reverse standoff voltage diode capacitance Conditions f = 1 MHz; VR = 0 V Min Typ Max Unit - - 5V - 2.9 3.5 pF 2. Pinning information Table 2. Pin 1 2 Pinning Description cathode (diode 1) cathode (diode 2) [1] The marking bar indicates pin 1. Simplified outline [1] 12 Transparent top view Graphic symbol 12 sym045 NXP Semiconductors PESD5V0U1BLD Ultra low capacitance bidirectional ESD protection diode 3. Ordering informatio...




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