PESD5V0V1BLD

PESD5V0V1BLD Very low capacitance bidirectional ESD protection diode Rev. 1 — 7 December 2010 Product data sheet 1. Product profile 1.1 General description Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 1.2 Features and benefits „ Bidirectional ESD protection of one line „ Low clamping voltage: VCL = 12.5 V „ Ultra small SMD plastic package „ Ultra low leakage current: IRM < 1 nA „ Solderable side pads „ ESD protection up to 30 kV „ Package height typ. 0.37 mm „ IEC 61000-4-2; level 4 (ESD) „ Very low diode capacitance: Cd = 11 pF „ IEC 61000-4-5 (surge); IPP = 4.8 A „ Max. peak pulse power: PPP = 45 W „ AEC-Q101 qualified 1.3 Applications „ Computers and peripherals „ Audio and video equipment „ Cellular handsets and accessories „ Subscriber Identity Module (SIM) card protection „ Communication systems „ Portable electronics „ 10/100 Mbit/s Ethernet „ FireWire 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions VRWM reverse standoff voltage Cd diode capacitance f = 1 MHz; VR = 0 V Min Typ Max Unit - - 5V - 11 13 pF NXP Semiconductors PESD5V0V1BLD Very low capacitance bidirectional ESD protection diode 2. Pinning informa...