KMB080N75PA

SEMICONDUCTOR TECHNICAL DATA General Description It s mainly suitable for low voltage applications such as automotive, DC/DC converters and a load switch in battery powered applications FEATURES VDSS= 75V, ID= 80A Drain-Source ON Resistance : RDS(ON)=12m (Max.) @VGS = 10V MOSFET MAXIMUM RATING (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage Gate-Source Voltage Drain Current DC Pulsed (Note 1) Drain-Source Diode Forward Current Drain Power Dissipation Maximum Junction Temperature Storage Temperature Range VDSS VGSS ID* IDP IS PD* 25 Tj Tstg 75 25 80 320 80 300 -55 175 -55 175 V V A A A W Note1) Pulse Test : Pulse width 10 S Duty cycle 1% Thermal Characteristics CHARACTERISTIC SYMBOL RATING UNIT Thermal Resistance, Junction-to-Ambient RthJA 62.5 /W Thermal Resistance, Junction-to-Case RthJC 0.5 /W Equivalent Circuit D KMB080N75PA N CHANNEL MOS FIELD EFFECT TRANSISTOR A E I K M D NN F G B Q L J O C P H 123 1. GATE 2. DRAIN 3. SOURCE DIM MILLIMETERS A 9.9 +_ 0.2 B 15.95 MAX C 1.3+0.1/-0.05 D 0.8 +_ 0.1 E 3.6 +_ 0.2 F 2.8 +_ 0.1 G 3.7 H 0.5+0.1/-0.05 I 1.5 J 13.08 +_ 0.3 K 1.46 L 1.4 +_ 0.1 M 1.27 +_ 0.1 N 2.54 +_ 0.2 O 4.5 +_ 0.2 P 2.4 +_ 0.2 Q 9.2 +_ 0.2 TO-220AB G S 2007. 10. 31 Revision No : 2 1/6 KMB080N75PA MOSFET Electrical Characteristics (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL Static Drain-Source Breakdown Voltage BVDSS Drain Cut-off Current IDSS Gate Leakage Current IG...