KMB012N30QA

SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for DC/DC Converter and Battery pack.. FEATURES VDSS=30V, ID=12A. Drain to Source On Resistance. RDS(ON)=7m (Max.) @ VGS=10V RDS(ON)=11m (Max.) @ VGS=4.5V MOSFET Maximum Ratings (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL RATING UNIT Drain to Source Voltage Gate to Source Voltage Drain Current DC@Ta=25 (Note 1) Pulsed (Note 1) Drain Power Dissipation @Ta=25 (Note 1) Maximum Junction Temperature Storage Temperature Range VDSS VGSS ID IDP PD Tj Tstg 30 20 12 48 2.5 150 -55~150 V V A A W Thermal Resistance, Junction to Ambient (Note 1) RthJA Note1) Surface Mounted on 1 1 FR4 Board, t 10sec. 50 /W KMB012N30QA N-Ch Trench MOSFET DP H T G U L A DIM MILLIMETERS A 4.85+_ 0.2 85 B1 3.94+_ 0.2 B2 6.02+_ 0.3 B1 B2 D 0.4+_ 0.1 G 0.15+0.1/-0.05 14 H 1.63+_ 0.2 L 0.65+_ 0.2 P 1.27 T 0.20+0.1/-0.05 U 0.1 MAX FLP-8 KMB012N 30QA PIN CONNECTION (TOP VIEW) S1 S2 S3 G4 8D 7D 6D 5D 1 2 3 4 8 7 6 5 2009. 09. 04 Revision No : 0 1/4 KMB012N30QA ELECTRICAL CHARACTERISTICS (Ta=25 ) UNLESS OTHERWISE NOTED CHARACTERISTIC SYMBOL TEST CONDITION Static Drain to Source Breakdown Voltage Drain Cut-off Current Gate to Source Leakage Current Gate to Source Threshold Voltage Drain to Source On Resistance Forward Transconductance Dy...