KMB054N40DA

SEMICONDUCTOR TECHNICAL DATA KMB054N40DA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power Supply. FEATURES VDSS=40V, ID=54A. Low Drain-Source ON Resistance. : RDS(ON)=8.5m (Max.) @ VGS=10V : RDS(ON)=11m (Max.) @ VGS=4.5V Super High Dense Cell Design. High Power and Current Handling Capability. A CD B H G FF J E K L N M DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 D 0.70 +_0.20 E 2.70 +_ 0.15 F 2.30 +_ 0.10 G 0.96 MAX H 0.90 MAX J 1.80 +_0.20 K 2.30 +_0.10 L 0.50 +_ 0.10 M 0.50 +_0.10 N 0.70 MIN 123 1. GATE 2. DRAIN 3. SOURCE MAXIMUM RATING (Ta=25 Unless otherwise Noted) CHARACTERISTIC SYMBOL N-Ch UNIT Drain-Source Voltage VDSS Gate-Source Voltage VGSS Drain Current DC@TC=25 Pulsed (Note1) (Note2) ID IDP Drain-Source-Diode Forward Current IS @TC=25 Drain Power Dissipation @Ta=25 (Note1) (Note2) PD Maximum Junction Temperature Tj Storage Temperature Range Tstg Thermal Resistance, Junction to Case (Note1) RthJC Thermal Resistance, Junction to Ambient (Note2) RthJA Note 1) RthJC means that the infinite heat sink is mounted. Note 2) Surface Mounted on 1 1 Pad of 2 oz copper. 40 20 54 100 100 45 3.1 150 -55 150 2.8 40 V V A A W /W /W DPAK (1) Marking Type Name KMB 054N40 DA Lot No PIN CONNECTION (TOP VIEW) D 2 2 1 G 2008. 5. 26 ...