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10N60K

Unisonic Technologies

N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 10N60K 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60K is an N-channel Powe...


Unisonic Technologies

10N60K

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Description
UNISONIC TECHNOLOGIES CO., LTD 10N60K 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc. The UTC 10N60K is generally applied in high efficient DC to DC converters, PWM motor controls and bridge circuits, etc.  FEATURES * RDS(ON)<1.2Ω @ VGS=10V * Low Gate Charge (Typical 90nC) * Low CRSS ( typical 18 pF) * High Switching Speed * Improved dv/dt capability  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 10N60KL-TF3-T 10N60KG-TF3-T TO-220F 10N60KL-TF1-T 10N60KG-TF1-T TO-220F1 10N60KL-TF2-T 10N60KG-TF2-T TO-220F2 10N60KL-TF3T-T 10N60KG-TF3T-T TO-220F3 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GDS GDS GDS GDS Packing Tube Tube Tube Tube  MARKING INFORMATION PACKAGE TO-220F TO-220F1 TO-220F2 TO-220F3 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd MARKING 1 of 7 QW-R502-743.E 10N60K Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) Drain Current Continuous Pulsed (Note 2) Avalanche Energy Single Pulsed (Note 3) IAR ID IDM EAS 10 A 10 A 38 A 300 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation TO-220F/TO-220F1 TO-220F3...




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