BLL8H0514-25
Power LDMOS transistor
Rev. 1 — 9 February 2015
Product data sheet
1. Product profile
1.1 General descri...
BLL8H0514-25
Power LDMOS
transistor
Rev. 1 — 9 February 2015
Product data sheet
1. Product profile
1.1 General description
25 W LDMOS
transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.
Table 1. Application information Typical RF performance at Tcase = 25 C; IDq = 50 mA; in a class-AB application circuit.
Test signal f
tp VDS PL Gp RLin D Pdroop(pulse) tr
(MHz)
(s) (%) (V) (W) (dB) (dB) (%) (dB)
(ns)
tf (ns)
pulsed RF 960 to 1215 128 10 50 25 21 10 58 0.05
86
1200 to 1400 300 10 50 25 19 10 50 0.05
86
1.2 Features and benefits
Easy power control Integrated dual side ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (0.5 GHz to 1.4 GHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range
2. Pinning information
Table 2. Pin 1 2 3
Pinning Description drain gate source
[1] Connected to flange.
Simplified outline Graphic symbol
[1]
V\P
NXP Semiconductors
BLL8H0514-25
Power LDMOS
transistor
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
BLL8H0514-25 -
flanged ceramic package; 2 mounting holes; 2 leads
Version SOT467C
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating ...