Document
BLL8H0514L-130; BLL8H0514LS-130
LDMOS driver transistor
Rev. 2 — 9 February 2015
Product data sheet
1. Product profile
1.1 General description
130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.
Table 1. Application information Typical RF performance at Tcase = 25 C; IDq = 50 mA; in a class-AB application circuit.
Test signal f
tp VDS PL Gp RLin D Pdroop(pulse) tr
(MHz)
(s) (%) (V) (W) (dB) (dB) (%) (dB)
(ns)
tf (ns)
pulsed RF 960 to 1215 128 10 50 130 19 10 54 0
15 8
1200 to 1400 300 10 50 130 17 10 50 0
15 8
1.2 Features and benefits
Easy power control Integrated dual side ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (0.5 GHz to 1.4 GHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range
NXP Semiconductors
BLL8H0514L(S)-130
LDMOS driver transistor
2. Pinning information
Table 2. Pinning Pin Description BLL8H0514L-130 (SOT1135A) 1 drain 2 gate 3 source
BLL8H0514LS-130 (SOT1135B) 1 drain 2 gate 3 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
[1]
V\P
[1]
V\P
Table 3. Ordering information
Type number
Package
Name Description
BLL8H0514L-130 -
flanged ceramic package; 2 mounting holes; 2 leads
BLL8H0514LS-130 -
earless flanged ceramic package; 2 leads
Version SOT1135A SOT1135B
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage VGS gate-source voltage Tstg storage temperature Tj junction temperature
Min 6 65 [1] -
Max 100 +13 +150 225
Unit V V C C
[1] Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF calculator.
BLL8H0514L-130_0514LS-130
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 9 February 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
2 of 13
NXP Semiconductors
BLL8H0514L(S)-130
LDMOS driver transistor
5. Thermal characteristics
Table 5. Symbol Zth(j-c)
Thermal characteristics
Parameter
transient thermal impedance from junction to case
Conditions Tcase = 85 C; PL = 130 W
tp = 100 s; = 10 % tp = 200 s; = 10 % tp = 300 s; = 10 % tp = 100 s; = 20 % tp = 1 ms; = 10 %
Typ Unit
0.17 K/W 0.22 K/W 0.25 K/W 0.23 K/W 0.36 K/W
6. Characteristics
Table 6. DC characteristics Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
V(BR)DSS VGS(th) IDSS IDSX
drain-source breakdown voltage gate-source threshold voltage drain leakage current drain cut-off current
IGSS gfs RDS(on)
gate leakage current forward transconductance drain-source on-state resistance
VGS = 0 V; ID = 630 mA
VDS = 10 V; ID = 135 mA
VGS = 0 V; VDS = 50 V
VGS = VGS(th) + 3.75 V; VDS = 10 V
VGS = 11 V; VDS = 0 V
VDS = 10 V; ID = 135 mA
VGS = VGS(th) + 6.25 V; ID = 135 mA
Min Typ Max Unit
100 - -
V
1.3 1.8 2.25 V
- - 1.4 A
15.8 18 -
A
- - 140 nA 806 - 1578 mS - 200 275 m
Table 7. RF characteristics
Test signal: pulsed RF; tp = 300 s; = 10 %; RF performance at VDS = 50 V; IDq = 50 mA; f = 1.2 GHz to 1.4 GHz; Tcase = 25 C; unless otherwise specified, in a class-AB production test circuit.
Symbol Parameter
Conditions Min Typ Max Unit
VDS Gp RLin D Pdroop(pulse) tr tf
drain-source voltage power gain input return loss drain efficiency pulse droop power rise time fall time
PL = 130 W PL = 130 W PL = 130 W PL = 130 W PL = 130 W PL = 130 W PL = 130 W
- - 50 V
15 17 -
dB
- 10 7 dB
45 50 -
%
- 0 0.3 dB
- 20 50 ns
- 6 50 ns
BLL8H0514L-130_0514LS-130
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 9 February 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
3 of 13
NXP Semiconductors
BLL8H0514L(S)-130
LDMOS driver transistor
7. Application information
7.1 Ruggedness in class-AB operation
The BLL8H0514L-130 and BLL8H0514LS-130 are capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 50 mA; PL = 130 W; f = 1.2 GHz to 1.4 GHz; tp = 300 s; = 10 %.
7.2 Impedance information
Table 8. f (MHz) 1200 1300 1400
Typical impedance ZS () 1.21 j3.44 1.56 j4.49 2.21 j4.86
ZL () 2.40 j0.63 2.30 j0.87 2.00 j1.71
JDWH =6
Fig 1. Definition of transistor impedance
GUDLQ =/
DDI
BLL8H0514L-130_0514LS-130
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 9 February 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
4 of 13
NXP Semiconductors
BLL8H0514L(S)-130
LDMOS driver transistor
7.3 Performance curves
.