BLL8H1214L-250; BLL8H1214LS-250
LDMOS L-band radar power transistor
Rev. 2 — 13 January 2015
Product data sheet
1. Pro...
BLL8H1214L-250; BLL8H1214LS-250
LDMOS L-band radar power
transistor
Rev. 2 — 13 January 2015
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power
transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.
Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit.
Test signal
f
VDS PL
Gp D
tr
tf
(GHz)
(V) (W)
(dB) (%) (ns)
(ns)
pulsed RF
1.2 to 1.4 50 250
17 55
15
5
1.2 Features and benefits
Easy power control Integrated dual side ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (1.2 GHz to 1.4 GHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency range
NXP Semiconductors
BLL8H1214L(S)-250
LDMOS L-band radar power
transistor
2. Pinning information
Table 2. Pinning Pin Description BLL8H1214L-250 (SOT502A) 1 drain 2 gate 3 source
BLL8H1214LS-250 (SOT502B) 1 drain 2 gate 3 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
[1]
V\P
[1]
V\P
Table 3. Ordering information
Type number
Package
Name Description
BLL8H1214L-250 -
flanged ceramic package...
