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protection diodes. PESD12VS1UL Datasheet

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protection diodes. PESD12VS1UL Datasheet






PESD12VS1UL diodes. Datasheet pdf. Equivalent




PESD12VS1UL diodes. Datasheet pdf. Equivalent





Part

PESD12VS1UL

Description

Unidirectional ESD protection diodes



Feature


PESD12VS1UL Unidirectional ESD protectio n diode 15 January 2020 Product data s heet 1. General description Unidirecti onal ElectroStatic Discharge (ESD) prot ection diode in a SOD882 leadless ultra small Surface Mounted Device (SMD) pla stic package designed to protect one si gnal line from the damage caused by ESD and other transients. 2. Features and benefits • Ultra .
Manufacture

NXP

Datasheet
Download PESD12VS1UL Datasheet


NXP PESD12VS1UL

PESD12VS1UL; small SMD plastic package • ESD protec tion of one line • Max. peak pulse po wer: PPPM = 150 W • Low clamping volt age: VCL = 35 V • Ultra low leakage c urrent: IRM < 1 nA • ESD protection u p to 30 kV • IEC 61000-4-2; level 4 ( ESD) • IEC 61000-4-5; (surge); IPPM = 5 A • AEC-Q101 qualified 3. Applica tions • Computers and peripherals • Audio and video equipment • Parallel .


NXP PESD12VS1UL

ports • Communication systems • High -speed data lines 4. Quick reference d ata Table 1. Quick reference data Sym bol Parameter VRWM reverse standoff voltage Cd diode capacitance Conditio ns Tamb = 25 °C f = 1 MHz; VR = 0 V; T amb = 25 °C Min Typ Max Unit - - 12 V - 38 75 pF Nexperia PESD12VS1UL Unid irectional ESD protection diode 5. Pin ning information Table .


NXP PESD12VS1UL

2. Pinning information Pin Symbol Descri ption 1K cathode[1] 2A anode [1] T he marking bar indicates the cathode. Simplified outline 12 Transparent top v iew DFN1006-2 (SOD882) Graphic symbol 1 2 sym035 6. Ordering information Table 3. Ordering information Type num ber Package Name PESD12VS1UL DFN100 6-2 Description Version plastic, lea dless ultra small .

Part

PESD12VS1UL

Description

Unidirectional ESD protection diodes



Feature


PESD12VS1UL Unidirectional ESD protectio n diode 15 January 2020 Product data s heet 1. General description Unidirecti onal ElectroStatic Discharge (ESD) prot ection diode in a SOD882 leadless ultra small Surface Mounted Device (SMD) pla stic package designed to protect one si gnal line from the damage caused by ESD and other transients. 2. Features and benefits • Ultra .
Manufacture

NXP

Datasheet
Download PESD12VS1UL Datasheet




 PESD12VS1UL
PESD12VS1UL
Unidirectional ESD protection diode
15 January 2020
Product data sheet
1. General description
Unidirectional ElectroStatic Discharge (ESD) protection diode in a SOD882 leadless ultra small
Surface Mounted Device (SMD) plastic package designed to protect one signal line from the
damage caused by ESD and other transients.
2. Features and benefits
Ultra small SMD plastic package
ESD protection of one line
Max. peak pulse power: PPPM = 150 W
Low clamping voltage: VCL = 35 V
Ultra low leakage current: IRM < 1 nA
ESD protection up to 30 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5; (surge); IPPM = 5 A
AEC-Q101 qualified
3. Applications
Computers and peripherals
Audio and video equipment
Parallel ports
Communication systems
High-speed data lines
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VRWM
reverse standoff
voltage
Cd diode capacitance
Conditions
Tamb = 25 °C
f = 1 MHz; VR = 0 V; Tamb = 25 °C
Min Typ Max Unit
- - 12 V
- 38 75 pF




 PESD12VS1UL
Nexperia
PESD12VS1UL
Unidirectional ESD protection diode
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1K
cathode[1]
2A
anode
[1] The marking bar indicates the cathode.
Simplified outline
12
Transparent
top view
DFN1006-2 (SOD882)
Graphic symbol
1
2
sym035
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PESD12VS1UL
DFN1006-2
Description
Version
plastic, leadless ultra small package; 2 terminals; 0.65 mm pitch; SOD882
1 mm x 0.6 mm x 0.48 mm body
7. Marking
Table 4. Marking codes
Type number
PESD12VS1UL
Marking code
G3
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
PPPM
rated peak pulse power
IPPM
rated peak pulse current
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
ESD maximum ratings
Conditions
tp = 8/20 µs
VESD
electrostatic discharge
voltage
IEC 61000-4-2 (contact discharge)
MIL-STD-883 (human body model)
[1]
[1]
[2]
[2]
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC61000-4-5.
[2] Device stressed with ten non-repetitive ESD pulses.
Min Max Unit
- 150 W
- 5A
- 150 °C
-55 150 °C
-65 150 °C
- 30 kV
- 10 kV
PESD12VS1UL
Product data sheet
All information provided in this document is subject to legal disclaimers.
15 January 2020
© Nexperia B.V. 2020. All rights reserved
2 / 11




 PESD12VS1UL
Nexperia
120
IPP
(%)
80
40
100 % IPP; 8 µs
001aaa630
e-t
50 % IPP; 20 µs
IPP
100 %
90 %
PESD12VS1UL
Unidirectional ESD protection diode
0
0 10 20 30 40
t (µs)
Fig. 1. 8/20 µs pulse waveform according to
IEC 61000-4-5
10 %
tr = 0.6 ns to 1 ns
30 ns
60 ns
t
001aaa631
Fig. 2. ESD pulse waveform according to
IEC 61000-4-2
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
VRWM
reverse standoff
voltage
Tamb = 25 °C
VBR
breakdown voltage
IR = 5 mA; Tamb = 25 °C
IRM reverse leakage current VRWM = 12 V; Tamb = 25 °C
Cd
diode capacitance
f = 1 MHz; VR = 0 V; Tamb = 25 °C
VCL
clamping voltage
IPP = 1 A; Tamb = 25 °C
IPPM = 5 A; Tamb = 25 °C
rdif differential resistance IR = 1 mA; Tamb = 25 °C
[1]
[2]
[2]
[1] Pulse test: tp ≤ 300 μs; duty cycle ≤ 0.02.
[2] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
Min
-
14.7
-
-
-
-
-
Typ
-
15
1
38
-
-
-
Max Unit
12 V
15.3 V
50 nA
75 pF
19 V
35 V
200 Ω
PESD12VS1UL
Product data sheet
All information provided in this document is subject to legal disclaimers.
15 January 2020
© Nexperia B.V. 2020. All rights reserved
3 / 11



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