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Mode MOSFET. PJA138L Datasheet

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Mode MOSFET. PJA138L Datasheet






PJA138L MOSFET. Datasheet pdf. Equivalent




PJA138L MOSFET. Datasheet pdf. Equivalent





Part

PJA138L

Description

N-Channel Enhancement Mode MOSFET



Feature


PPJA138L 60V N-Channel Enhancement Mode MOSFET Voltage 60 V Current 250mA Features  RDS(ON) , VGS@10V, ID@250 mA<4.2Ω  RDS(ON) , VGS@4.5V, ID@10 0mA<5Ω  RDS(ON) , VGS@2.5V, ID@50m A<7Ω  Advanced Trench Process Tech nology  ESD Protected  Specially Designed for Relay driver, Speed line d rive, etc.  Lead free in compliance with EU RoHS 2011/65/EU directive.  G.
Manufacture

Pan Jit International

Datasheet
Download PJA138L Datasheet


Pan Jit International PJA138L

PJA138L; reen molding compound as per IEC61249 St d. (Halogen Free) Mechanical Data  Case : SOT-23 Package  Terminals : S olderable per MIL-STD-750, Method 2026  Approx. Weight : 0.0003 ounces, 0.0 084 grams  Marking: A8L SOT-23 Uni t : inch(mm) Maximum Ratings and Th ermal Characteristics o (TA=25 C unl ess otherwise noted) PARAMETER Drai n-Source Voltage Gate-Sou.


Pan Jit International PJA138L

rce Voltage Continuous Drain Current Pu lsed Drain Current Power Dissipation T A=25oC Derate above 25oC Operating Jun ction and Storage Temperature Range Ty pical Thermal resistance - Junction to Ambient (Note 3) SYMBOL VDS VGS ID IDM PD TJ,TSTG RθJA LIMIT 60 +20 250 100 0 500 4 -55~150 250 UNITS V V mA mA mW mW/ oC oC oC/W March 27,2015-REV.01 Page 1 PPJA138L E.


Pan Jit International PJA138L

lectrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER St atic Drain-Source Breakdown Voltage Gat e Threshold Voltage Drain-Source On-Sta te Resistance Zero Gate Voltage Drain C urrent Gate-Source Leakage Current Dyna mic (Note 4) Total Gate Charge Gate-Sou rce Charge Gate-Drain Charge Input Capa citance Output Capacitance Reverse Tran sfer Capacitance T.

Part

PJA138L

Description

N-Channel Enhancement Mode MOSFET



Feature


PPJA138L 60V N-Channel Enhancement Mode MOSFET Voltage 60 V Current 250mA Features  RDS(ON) , VGS@10V, ID@250 mA<4.2Ω  RDS(ON) , VGS@4.5V, ID@10 0mA<5Ω  RDS(ON) , VGS@2.5V, ID@50m A<7Ω  Advanced Trench Process Tech nology  ESD Protected  Specially Designed for Relay driver, Speed line d rive, etc.  Lead free in compliance with EU RoHS 2011/65/EU directive.  G.
Manufacture

Pan Jit International

Datasheet
Download PJA138L Datasheet




 PJA138L
PPJA138L
60V N-Channel Enhancement Mode MOSFET
Voltage
60 V
Current 250mA
Features
RDS(ON) , VGS@10V, ID@250mA<4.2
RDS(ON) , VGS@4.5V, ID@100mA<5
RDS(ON) , VGS@2.5V, ID@50mA<7
Advanced Trench Process Technology
ESD Protected
Specially Designed for Relay driver, Speed line drive, etc.
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case : SOT-23 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight : 0.0003 ounces, 0.0084 grams
Marking: A8L
SOT-23
Unit : inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
TA=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
60
+20
250
1000
500
4
-55~150
250
UNITS
V
V
mA
mA
mW
mW/ oC
oC
oC/W
March 27,2015-REV.01
Page 1




 PJA138L
PPJA138L
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic (Note 4)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
SYMBOL
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS
TEST CONDITION
VGS=0V,ID=250uA
VDS=VGS, ID=250uA
VGS=10V,ID=250mA
VGS=4.5V,ID=100mA
VGS=2.5V,ID=50mA
VGS=1.8V,ID=10mA
VDS=60V,VGS=0V
VGS=+20V,VDS=0V
VDS=15V, ID=250mA,
VGS=4.5V (Note 1,2)
VDS=15V, VGS=0V,
f=1.0MHZ
VDD=10V, ID=250mA,
VGS=10V,
RG=6Ω (Note 1,2)
---
Diode Forward Voltage
VSD IS=250mA, VGS=0V
MIN. TYP. MAX. UNITS
60 -
-
0.8 1.2 1.5
- 2.5 4.2
- 2.8 5
- 3.7 7
- 12 -
- 0.01 1
- +1.0 +10
V
V
Ω
uA
uA
- 0.7 -
- 0.33 -
- 0.2 -
- 15 -
- 8.4 -
- 4.2 -
-7-
- 22 -
- 21 -
- 25 -
nC
pF
ns
- - 250 mA
- 0.8 1.1 V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins. mounted on a 1 inch square pad of copper
4. Guaranteed by design, not subject to production testing.
March 27,2015-REV.01
Page 2




 PJA138L
PPJA138L
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
March 27,2015-REV.01
Fig.6 Body Diode Characteristics
Page 3



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