PPJA3400
30V N-Channel Enhancement Mode MOSFET
Voltage
30 V Current
4.9A
Features
RDS(ON) , VGS@10V, [email protected]<38mΩ...
PPJA3400
30V N-Channel Enhancement Mode MOSFET
Voltage
30 V Current
4.9A
Features
RDS(ON) , VGS@10V,
[email protected]<38mΩ RDS(ON) ,
[email protected],
[email protected]<44mΩA RDS(ON) ,
[email protected],
[email protected]<60mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc Lead free in compliance with EU RoHS 2011/65/EU
directive Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0003 ounces, 0.0084 grams Marking: A00
SOT-23
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current
Pulsed Drain Current Power Dissipation
Ta=25oC Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance - Junction to Ambient (Note 3)
SYMBOL VDS VGS ID IDM
PD
TJ,TSTG
RθJA
LIMIT 30 +12 4.9 19.6 1.25 10
-55~150
100
UNITS V V A A W
mW/ oC oC
oC/W
July 1,2015-REV.01
Page 1
PPJA3400
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Turn-On Delay Time Turn-On Rise Time Turn-Off D...