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PJA3402

Pan Jit International

N-Channel Enhancement Mode MOSFET

PPJA3402 30V N-Channel Enhancement Mode MOSFET Voltage 30 V Current 4.4A Features  RDS(ON) , VGS@10V, [email protected]<48...


Pan Jit International

PJA3402

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PPJA3402 30V N-Channel Enhancement Mode MOSFET Voltage 30 V Current 4.4A Features  RDS(ON) , VGS@10V, [email protected]<48mΩ  RDS(ON) , [email protected], [email protected]<53mΩ  RDS(ON) , [email protected], [email protected]<66mΩ  RDS(ON) , [email protected], [email protected]<92mΩ  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  Lead free in comply with EU RoHS 2011/65/EU directives.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case : SOT-23 Package  Terminals : Solderable per MIL-STD-750, Method 2026  Approx. Weight : 0.0003 ounces, 0.0084 grams  Marking : A02 SOT-23 Unit: inch(mm) Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Ta=25oC Derate above 25oC Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Ambient (Note 3) SYMBOL VDS VGS ID IDM PD TJ,TSTG RθJA LIMIT 30 +12 4.4 17.6 1.25 10 -55~150 100 UNITS V V A A W mW/ oC oC oC/W March 10,2014-REV.00 Page 1 PPJA3402 Electrical Characteristics (TA=25oC unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Turn-On Delay Time Turn...




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