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Mode MOSFET. PJA3403 Datasheet

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Mode MOSFET. PJA3403 Datasheet






PJA3403 MOSFET. Datasheet pdf. Equivalent




PJA3403 MOSFET. Datasheet pdf. Equivalent





Part

PJA3403

Description

P-Channel Enhancement Mode MOSFET



Feature


PPJA3403 30V P-Channel Enhancement Mode MOSFET Voltage -30 V Current -3.1A Features  RDS(ON) , VGS@-10V, ID@- 3.1A<98mΩ  RDS(ON) , VGS@-4.5V, ID @-2.2A<114mΩ  RDS(ON) , VGS@-2.5V, ID@-1.1A<165mΩ  Advanced Trench P rocess Technology  Specially Designe d for Switch Load, PWM Application, etc .  Lead free in compliance with EU R oHS 2011/65/EU directive.  Green mo.
Manufacture

Pan Jit International

Datasheet
Download PJA3403 Datasheet


Pan Jit International PJA3403

PJA3403; lding compound as per IEC61249 Std. (Hal ogen Free) Mechanical Data  Case: SO T-23 Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx . Weight: 0.0003 ounces, 0.0084 grams Marking: A03 SOT-23 Unit: inch(mm) Maximum Ratings and Thermal Character istics (TA=25oC unless otherwise noted) PARAMETER Drain-Source Voltage Gate -Source Voltage Continuou.


Pan Jit International PJA3403

s Drain Current Pulsed Drain Current Po wer Dissipation Ta=25oC Derate above 2 5oC Operating Junction and Storage Tem perature Range Typical Thermal resista nce - Junction to Ambient (Note 3) SYM BOL VDS VGS ID IDM PD TJ,TSTG RθJA LI MIT -30 +12 -3.1 -12.4 1.25 10 -55~150 100 UNITS V V A A W mW/ oC oC oC/W Ma rch 10,2014-REV.00 Page 1 PPJA3403 El ectrical Characteri.


Pan Jit International PJA3403

stics (TA=25oC unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-S ource On-State Resistance Zero Gate Vol tage Drain Current Gate-Source Leakage Current Dynamic Total Gate Charge Gate- Source Charge Gate-Drain Charge Input C apacitance Output Capacitance Reverse T ransfer Capacitance Switching Turn-On D elay Time Turn-On .

Part

PJA3403

Description

P-Channel Enhancement Mode MOSFET



Feature


PPJA3403 30V P-Channel Enhancement Mode MOSFET Voltage -30 V Current -3.1A Features  RDS(ON) , VGS@-10V, ID@- 3.1A<98mΩ  RDS(ON) , VGS@-4.5V, ID @-2.2A<114mΩ  RDS(ON) , VGS@-2.5V, ID@-1.1A<165mΩ  Advanced Trench P rocess Technology  Specially Designe d for Switch Load, PWM Application, etc .  Lead free in compliance with EU R oHS 2011/65/EU directive.  Green mo.
Manufacture

Pan Jit International

Datasheet
Download PJA3403 Datasheet




 PJA3403
PPJA3403
30V P-Channel Enhancement Mode MOSFET
Voltage
-30 V Current
-3.1A
Features
RDS(ON) , VGS@-10V, ID@-3.1A<98m
RDS(ON) , VGS@-4.5V, ID@-2.2A<114m
RDS(ON) , VGS@-2.5V, ID@-1.1A<165m
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc.
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0003 ounces, 0.0084 grams
Marking: A03
SOT-23
Unit: inch(mm)
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
-30
+12
-3.1
-12.4
1.25
10
-55~150
100
UNITS
V
V
A
A
W
mW/ oC
oC
oC/W
March 10,2014-REV.00
Page 1




 PJA3403
PPJA3403
Electrical Characteristics (TA=25oC unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
SYMBOL
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS
TEST CONDITION
VGS=0V, ID=-250uA
VDS=VGS, ID=-250uA
VGS=-10V, ID=-3.1A
VGS=-4.5V, ID=-2.2A
VGS=-2.5V, ID=-1.1A
VDS=-30V, VGS=0V
VGS=+12V, VDS=0V
VDS=-15V, ID=-3.1A,
VGS=-10V (Note 1,2)
VDS=-15V, VGS=0V,
f=1.0MHZ
VDD=-15V, ID=-3.1A,
VGS=-10V,
RG=6(Note 1,2)
---
Diode Forward Voltage
VSD IS=-1.0A, VGS=0V
MIN. TYP. MAX. UNITS
-30 -
-
-0.5 -0.96 -1.3
- 82 98
V
V
- 91 114 m
- 115 165
-
-0.01
-1
uA
-
+10 +100
nA
- 11 -
- 0.85 -
- 1.4 -
- 443 -
- 38 -
- 25 -
nC
pF
- 2.5 -
- 32 -
- 161 -
- 73 -
ns
- - -1.5
-0.79 -1.2
A
V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RΘJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper
4. The maximum current rating is package limited
March 10,2014-REV.00
Page 2




 PJA3403
PPJA3403
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
March 10,2014-REV.00
Fig.6 Body Diode Characteristics
Page 3



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