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Mode MOSFET. PJA3405 Datasheet

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Mode MOSFET. PJA3405 Datasheet






PJA3405 MOSFET. Datasheet pdf. Equivalent




PJA3405 MOSFET. Datasheet pdf. Equivalent





Part

PJA3405

Description

P-Channel Enhancement Mode MOSFET



Feature


PPJA3405 30V P-Channel Enhancement Mode MOSFET Voltage -30 V Current -3.6A Features  RDS(ON) , VGS@-10V, ID@- 3.6A<73mΩ  RDS(ON) , VGS@-4.5V, ID @-2.4A<97mΩ  Advanced Trench Proce ss Technology  Specially Designed fo r Switch Load, PWM Application, etc  Lead free in compliance with EU RoHS 2 011/65/EU directive.  Green molding compound as per IEC61249 Std. (Hal.
Manufacture

Pan Jit International

Datasheet
Download PJA3405 Datasheet


Pan Jit International PJA3405

PJA3405; ogen Free) Mechanical Data  Case: SOT -23 Package  Terminals: Solderable p er MIL-STD-750, Method 2026  Approx. Weight: 0.0003 ounces, 0.0084 grams Marking: A05 SOT-23 Unit: inch(mm) Maximum Ratings and Thermal Characteri stics (TA=25oC unless otherwise noted) PARAMETER Drain-Source Voltage Gate- Source Voltage Continuous Drain Curren t Pulsed Drain Current Po.


Pan Jit International PJA3405

wer Dissipation Ta=25oC Derate above 25 oC Operating Junction and Storage Temp erature Range Typical Thermal resistan ce - Junction to Ambient (Note 3) SYMB OL VDS VGS ID IDM PD TJ,TSTG RθJA LIM IT -30 +20 -3.6 -14.4 1.25 10 -55~150 1 00 UNITS V V A A W mW/ oC oC oC/W Mar ch 10,2014-REV.00 Page 1 PPJA3405 Ele ctrical Characteristics (TA=25oC unless otherwise noted) .


Pan Jit International PJA3405

PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-So urce On-State Resistance Zero Gate Volt age Drain Current Gate-Source Leakage C urrent Dynamic Total Gate Charge Gate-S ource Charge Gate-Drain Charge Input Ca pacitance Output Capacitance Reverse Tr ansfer Capacitance Switching Turn-On De lay Time Turn-On Rise Time Turn-Off Del ay Time Turn-Off F.

Part

PJA3405

Description

P-Channel Enhancement Mode MOSFET



Feature


PPJA3405 30V P-Channel Enhancement Mode MOSFET Voltage -30 V Current -3.6A Features  RDS(ON) , VGS@-10V, ID@- 3.6A<73mΩ  RDS(ON) , VGS@-4.5V, ID @-2.4A<97mΩ  Advanced Trench Proce ss Technology  Specially Designed fo r Switch Load, PWM Application, etc  Lead free in compliance with EU RoHS 2 011/65/EU directive.  Green molding compound as per IEC61249 Std. (Hal.
Manufacture

Pan Jit International

Datasheet
Download PJA3405 Datasheet




 PJA3405
PPJA3405
30V P-Channel Enhancement Mode MOSFET
Voltage
-30 V Current
-3.6A
Features
RDS(ON) , VGS@-10V, ID@-3.6A<73m
RDS(ON) , VGS@-4.5V, ID@-2.4A<97m
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0003 ounces, 0.0084 grams
Marking: A05
SOT-23
Unit: inch(mm)
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
-30
+20
-3.6
-14.4
1.25
10
-55~150
100
UNITS
V
V
A
A
W
mW/ oC
oC
oC/W
March 10,2014-REV.00
Page 1




 PJA3405
PPJA3405
Electrical Characteristics (TA=25oC unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
SYMBOL
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS
TEST CONDITION
VGS=0V, ID=-250uA
VDS=VGS, ID=-250uA
VGS=-10V, ID=-3.6A
VGS=-4.5V, ID=-2.4A
VDS=-30V, VGS=0V
VGS=+20V, VDS=0V
VDS=-15V, ID=-3.6A,
VGS=-10V (Note 1,2)
VDS=-15V, VGS=0V,
f=1.0MHZ
VDD=-15V, ID=-3.6A,
VGS=-10V,
RG=6(Note 1,2)
---
Diode Forward Voltage
VSD IS=-1.0A, VGS=0V
MIN. TYP. MAX. UNITS
-30 -
-
-1.0 -1.37 -2.1
- 59 73
- 76 97
V
V
m
-
-0.01
-1
uA
-
+10 +100
nA
- 10 -
- 1.1 -
- 1.7 -
- 417 -
- 50 -
- 36 -
nC
pF
- 3.2 -
- 33 -
- 119 -
- 68 -
ns
- - -1.5
- -0.77 -1.2
A
V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RΘJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper
4. The maximum current rating is package limited
March 10,2014-REV.00
Page 2




 PJA3405
PPJA3405
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
March 10,2014-REV.00
Fig.6 Body Dlode Characterlslcs
Page 3



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