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Mode MOSFET. PJA3406 Datasheet

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Mode MOSFET. PJA3406 Datasheet






PJA3406 MOSFET. Datasheet pdf. Equivalent




PJA3406 MOSFET. Datasheet pdf. Equivalent





Part

PJA3406

Description

N-Channel Enhancement Mode MOSFET



Feature


PPJA3406 30V N-Channel Enhancement Mode MOSFET Voltage 30 V Current 4.4A Features  RDS(ON) , VGS@10V, ID@4.4 A<48mΩ  RDS(ON) , VGS@4.5V, ID@2.8 A<70mΩ  Advanced Trench Process Te chnology  Specially Designed for swi tch Load, PWM applications, and solid-s tate relays relay  Lead free in comp liance with EU RoHS 2011/65/EU directiv e.  Green molding compound as p.
Manufacture

Pan Jit International

Datasheet
Download PJA3406 Datasheet


Pan Jit International PJA3406

PJA3406; er IEC61249 Std. (Halogen Free) Mechanic al Data  Case: SOT-23 Package  Te rminals: Solderable per MIL-STD-750, Me thod 2026  Approx. Weight: 0.0003 ou nces, 0.0084 grams  Marking: A06 SO T-23 Unit: inch(mm) Maximum Ratings a nd Thermal Characteristics (TA=25oC unl ess otherwise noted) PARAMETER Drain- Source Voltage Gate-Source Voltage Co ntinuous Drain Current Pu.


Pan Jit International PJA3406

lsed Drain Current Power Dissipation Ta =25oC Derate above 25oC Operating Junc tion and Storage Temperature Range Typ ical Thermal resistance - Junction to A mbient (Note 3) SYMBOL VDS VGS ID IDM PD TJ,TSTG RθJA LIMIT 30 +20 4.4 17.6 1.25 10 -55~150 100 UNITS V V A A W m W/ oC oC oC/W March 10,2014-REV.00 Pa ge 1 PPJA3406 Electrical Characteristi cs (TA=25oC unless .


Pan Jit International PJA3406

otherwise noted) PARAMETER Static Drain -Source Breakdown Voltage Gate Threshol d Voltage Drain-Source On-State Resista nce Zero Gate Voltage Drain Current Gat e-Source Leakage Current Dynamic Total Gate Charge Gate-Source Charge Gate-Dra in Charge Input Capacitance Output Capa citance Reverse Transfer Capacitance Sw itching Turn-On Delay Time Turn-On Rise Time Turn-Off Del.

Part

PJA3406

Description

N-Channel Enhancement Mode MOSFET



Feature


PPJA3406 30V N-Channel Enhancement Mode MOSFET Voltage 30 V Current 4.4A Features  RDS(ON) , VGS@10V, ID@4.4 A<48mΩ  RDS(ON) , VGS@4.5V, ID@2.8 A<70mΩ  Advanced Trench Process Te chnology  Specially Designed for swi tch Load, PWM applications, and solid-s tate relays relay  Lead free in comp liance with EU RoHS 2011/65/EU directiv e.  Green molding compound as p.
Manufacture

Pan Jit International

Datasheet
Download PJA3406 Datasheet




 PJA3406
PPJA3406
30V N-Channel Enhancement Mode MOSFET
Voltage
30 V
Current
4.4A
Features
RDS(ON) , VGS@10V, ID@4.4A<48m
RDS(ON) , VGS@4.5V, ID@2.8A<70m
Advanced Trench Process Technology
Specially Designed for switch Load, PWM applications,
and solid-state relays relay
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0003 ounces, 0.0084 grams
Marking: A06
SOT-23
Unit: inch(mm)
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
30
+20
4.4
17.6
1.25
10
-55~150
100
UNITS
V
V
A
A
W
mW/ oC
oC
oC/W
March 10,2014-REV.00
Page 1




 PJA3406
PPJA3406
Electrical Characteristics (TA=25oC unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
SYMBOL
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS
TEST CONDITION
VGS=0V, ID=250uA
VDS=VGS, ID=250uA
VGS=10V, ID=4.4A
VGS=4.5V, ID=2.8A
VDS=30V, VGS=0V
VGS=+20V, VDS=0V
VDS=15V, ID=4.4A,
VGS=10V (Note 1,2)
VDS=15V, VGS=0V,
f=1.0MHZ
VDD=15V, ID=4.4A,
VGS=10V,
RG=6(Note 1,2)
---
Diode Forward Voltage
VSD IS=1.0A, VGS=0V
MIN. TYP. MAX. UNITS
30 -
-
1.0 1.37 2.1
- 35 48
- 51 70
V
V
m
- 0.01 1
uA
-
+10 +100
nA
- 5.8 -
-1-
-1-
- 235 -
- 36 -
- 24 -
nC
pF
-3-
- 39 -
ns
- 23 -
- 28 -
- - 1.5 A
-
0.77
1.2
V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RΘJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper
4. The maximum current rating is package limited
March 10,2014-REV.00
Page 2




 PJA3406
PPJA3406
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
March 10,2014-REV.00
Fig.6 Body Diode Characteristics
Page 3



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