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Mode MOSFET. PJA3407 Datasheet

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Mode MOSFET. PJA3407 Datasheet






PJA3407 MOSFET. Datasheet pdf. Equivalent




PJA3407 MOSFET. Datasheet pdf. Equivalent





Part

PJA3407

Description

P-Channel Enhancement Mode MOSFET



Feature


PPJA3407 30V P-Channel Enhancement Mode MOSFET Voltage -30 V Current -3.8A Features  RDS(ON) , VGS@-10V, ID@- 3.8A<65mΩ  RDS(ON) , VGS@-4.5V, ID @-2.6A<80mΩ  Advanced Trench Proce ss Technology  Specially Designed fo r Switch Load, PWM Applications, and So lid-State Relays Drivers: Relay  Lea d free in compliance with EU RoHS 2011/ 65/EU directive.  Green molding.
Manufacture

Pan Jit International

Datasheet
Download PJA3407 Datasheet


Pan Jit International PJA3407

PJA3407; compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: SOT-23 Package  Terminals : Solderable per MIL-STD-750, Method 2026  Approx. We ight: 0.0003 ounces, 0.0084 grams  M arking: A07 SOT-23 Unit: inch(mm) Ma ximum Ratings and Thermal Characteristi cs (TA=25oC unless otherwise noted) PA RAMETER Drain-Source Voltage Gate-Sou rce Voltage Continuous Dr.


Pan Jit International PJA3407

ain Current Pulsed Drain Current Power Dissipation Ta=25oC Derate above 25oC Operating Junction and Storage Tempera ture Range Typical Thermal resistance - Junction to Ambient (Note 3) SYMBOL VDS VGS ID IDM PD TJ,TSTG RθJA LIMIT -30 +20 -3.8 -15.2 1.25 10 -55~150 100 UNITS V V A A W mW/ oC oC oC/W March 10,2014-REV.00 Page 1 PPJA3407 Electr ical Characteristic.


Pan Jit International PJA3407

s (TA=25oC unless otherwise noted) PARA METER Static Drain-Source Breakdown Vol tage Gate Threshold Voltage Drain-Sourc e On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Curr ent Dynamic Total Gate Charge Gate-Sour ce Charge Gate-Drain Charge Input Capac itance Output Capacitance Reverse Trans fer Capacitance Switching Turn-On Delay Time Turn-On Rise.

Part

PJA3407

Description

P-Channel Enhancement Mode MOSFET



Feature


PPJA3407 30V P-Channel Enhancement Mode MOSFET Voltage -30 V Current -3.8A Features  RDS(ON) , VGS@-10V, ID@- 3.8A<65mΩ  RDS(ON) , VGS@-4.5V, ID @-2.6A<80mΩ  Advanced Trench Proce ss Technology  Specially Designed fo r Switch Load, PWM Applications, and So lid-State Relays Drivers: Relay  Lea d free in compliance with EU RoHS 2011/ 65/EU directive.  Green molding.
Manufacture

Pan Jit International

Datasheet
Download PJA3407 Datasheet




 PJA3407
PPJA3407
30V P-Channel Enhancement Mode MOSFET
Voltage
-30 V Current
-3.8A
Features
RDS(ON) , VGS@-10V, ID@-3.8A<65m
RDS(ON) , VGS@-4.5V, ID@-2.6A<80m
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Applications,
and Solid-State Relays Drivers: Relay
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0003 ounces, 0.0084 grams
Marking: A07
SOT-23
Unit: inch(mm)
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
-30
+20
-3.8
-15.2
1.25
10
-55~150
100
UNITS
V
V
A
A
W
mW/ oC
oC
oC/W
March 10,2014-REV.00
Page 1




 PJA3407
PPJA3407
Electrical Characteristics (TA=25oC unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
SYMBOL TEST CONDITION
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
VGS=0V, ID=-250uA
VDS=VGS, ID=-250uA
VGS=-10V, ID=-3.8A
VGS=-4.5V, ID=-2.6A
VDS=-30V, VGS=0V
VGS=+20V, VDS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
VDS=-15V, ID=-3.8A,
VGS=-10V (Note 1,2)
VDS=-15V, VGS=0V,
f=1.0MHZ
td(on)
tr
td(off)
tf
VDD=-15V, ID=-3.8A,
VGS=-10V,
RG=6(Note 1,2)
IS ---
VSD IS=-1.0A, VGS=0V
MIN. TYP. MAX. UNITS
-30 -
-
-1.0 -1.36 -2.1
- 52 65
- 66 80
V
V
m
-
-0.01
-1
uA
-
+10 +100
nA
- 12 -
- 1.7 - nC
- 2.3 -
- 528 -
- 63 - pF
- 48 -
-5-
33
ns
- 27 -
10
- - -1.5 A
- 0.76 -1.2 V
NOTES:
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RΘJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper
4. The maximum current rating is package limited
March 10,2014-REV.00
Page 2




 PJA3407
PPJA3407
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
March 10,2014-REV.00
Fig.6 Body Diode Characteristics
Page 3



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