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Mode MOSFET. PJA3411 Datasheet

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Mode MOSFET. PJA3411 Datasheet






PJA3411 MOSFET. Datasheet pdf. Equivalent




PJA3411 MOSFET. Datasheet pdf. Equivalent





Part

PJA3411

Description

P-Channel Enhancement Mode MOSFET



Feature


PPJA3411 20V P-Channel Enhancement Mode MOSFET Voltage -20 V Current -3.1A Features  RDS(ON) , VGS@-4.5V, ID@ -3.1A<100mΩ  RDS(ON) , VGS@-2.5V, ID@-2.0A<135mΩ  RDS(ON) , VGS@-1.8 V, ID@-1.1A<190mΩ  Advanced Trench Process Technology  Specially Desig ned for Switch Load, PWM Application, e tc.  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green .
Manufacture

Pan Jit International

Datasheet
Download PJA3411 Datasheet


Pan Jit International PJA3411

PJA3411; molding compound as per IEC61249 Std. (H alogen Free) Mechanical Data  Case: SOT-23 Package  Terminals : Solderab le per MIL-STD-750, Method 2026  App rox. Weight: 0.0003 ounces, 0.0084 gram s  Marking: A11 SOT-23 Unit: inch( mm) Maximum Ratings and Thermal Charac teristics (TA=25oC unless otherwise not ed) PARAMETER Drain-Source Voltage G ate-Source Voltage Contin.


Pan Jit International PJA3411

uous Drain Current Pulsed Drain Current Power Dissipation Ta=25oC Derate abov e 25oC Operating Junction and Storage Temperature Range Typical Thermal resi stance - Junction to Ambient (Note 3) SYMBOL VDS VGS ID IDM PD TJ,TSTG RθJA LIMIT -20 +12 -3.1 -12.4 1.25 10 -55~1 50 100 UNITS V V A A W mW/ oC oC oC/W March 10,2014-REV.00 Page 1 PPJA3411 Electrical Charact.


Pan Jit International PJA3411

eristics (TA=25oC unless otherwise noted ) PARAMETER Static Drain-Source Breakd own Voltage Gate Threshold Voltage Drai n-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leaka ge Current Dynamic Total Gate Charge Ga te-Source Charge Gate-Drain Charge Inpu t Capacitance Output Capacitance Revers e Transfer Capacitance Switching Turn-O n Delay Time Turn-.

Part

PJA3411

Description

P-Channel Enhancement Mode MOSFET



Feature


PPJA3411 20V P-Channel Enhancement Mode MOSFET Voltage -20 V Current -3.1A Features  RDS(ON) , VGS@-4.5V, ID@ -3.1A<100mΩ  RDS(ON) , VGS@-2.5V, ID@-2.0A<135mΩ  RDS(ON) , VGS@-1.8 V, ID@-1.1A<190mΩ  Advanced Trench Process Technology  Specially Desig ned for Switch Load, PWM Application, e tc.  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green .
Manufacture

Pan Jit International

Datasheet
Download PJA3411 Datasheet




 PJA3411
PPJA3411
20V P-Channel Enhancement Mode MOSFET
Voltage
-20 V Current
-3.1A
Features
RDS(ON) , VGS@-4.5V, ID@-3.1A<100m
RDS(ON) , VGS@-2.5V, ID@-2.0A<135m
RDS(ON) , VGS@-1.8V, ID@-1.1A<190m
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc.
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0003 ounces, 0.0084 grams
Marking: A11
SOT-23
Unit: inch(mm)
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
-20
+12
-3.1
-12.4
1.25
10
-55~150
100
UNITS
V
V
A
A
W
mW/ oC
oC
oC/W
March 10,2014-REV.00
Page 1




 PJA3411
PPJA3411
Electrical Characteristics (TA=25oC unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
SYMBOL
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS
TEST CONDITION
VGS=0V, ID=-250uA
VDS=VGS, ID=-250uA
VGS=-4.5V, ID=-3.1A
VGS=-2.5V, ID=-2.0A
VGS=-1.8V, ID=-1.1A
VDS=-20V, VGS=0V
VGS=+12V, VDS=0V
VDS=-10V, ID=-3.1A,
VGS=-4.5V (Note 1,2)
VDS=-10V, VGS=0V,
f=1.0MHZ
VDD=-10V, ID=-3.1A,
VGS=-4.5V,
RG=6(Note 1,2)
---
Diode Forward Voltage
VSD IS=-1.0A, VGS=0V
MIN. TYP. MAX. UNITS
-20 -
-
-0.4 -0.71 -1.2
- 84 100
V
V
- 104 135 m
- 134 190
-
-0.01
-1
uA
-
+10 +100
nA
- 5.4 -
- 0.7 -
- 1.3 -
- 416 -
- 43 -
- 32 -
nC
pF
-4-
- 27 - ns
- 78 -
- 45 -
- - -1.5 A
-
0.8 -1.2
V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RΘJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper
4. The maximum current rating is package limited
March 10,2014-REV.00
Page 2




 PJA3411
PPJA3411
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
March 10,2014-REV.00
Fig.6 Body Diode Characteristics
Page 3



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