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Mode MOSFET. PJA3412 Datasheet

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Mode MOSFET. PJA3412 Datasheet






PJA3412 MOSFET. Datasheet pdf. Equivalent




PJA3412 MOSFET. Datasheet pdf. Equivalent





Part

PJA3412

Description

N-Channel Enhancement Mode MOSFET



Feature


PPJA3412 20V N-Channel Enhancement Mode MOSFET Voltage 20 V Current 4.1A Features  RDS(ON) , VGS@4.5V, ID@4. 1A<56mΩ  RDS(ON) , VGS@2.5V, ID@2. 8A<68mΩ  RDS(ON) , VGS@1.8V, ID@1. 5A<95mΩ  Advanced Trench Process T echnology  Specially Designed for Sw itch Load, PWM Application, etc.  Le ad free in compliance with EU RoHS 2011 /65/EU directive.  Green molding co.
Manufacture

Pan Jit International

Datasheet
Download PJA3412 Datasheet


Pan Jit International PJA3412

PJA3412; mpound as per IEC61249 Std. (Halogen Fre e) Mechanical Data  Case: SOT-23 Pac kage  Terminals : Solderable per MIL -STD-750, Method 2026  Approx. Weigh t: 0.0003 ounces, 0.0084 grams  Mark ing: A12 SOT-23 Unit: inch(mm) Maxim um Ratings and Thermal Characteristics (TA=25oC unless otherwise noted) PARAM ETER Drain-Source Voltage Gate-Source Voltage Continuous Drain.


Pan Jit International PJA3412

Current Pulsed Drain Current Power Dis sipation Ta=25oC Derate above 25oC Op erating Junction and Storage Temperatur e Range Typical Thermal resistance - J unction to Ambient (Note 3) SYMBOL VDS VGS ID IDM PD TJ,TSTG RθJA LIMIT 20 +12 4.1 16.4 1.25 10 -55~150 100 UNITS V V A A W mW/ oC oC oC/W March 10,201 4-REV.00 Page 1 PPJA3412 Electrical C haracteristics (TA=.


Pan Jit International PJA3412

25oC unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage G ate Threshold Voltage Drain-Source On-S tate Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dy namic Total Gate Charge Gate-Source Cha rge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Ca pacitance Switching Turn-On Delay Time Turn-On Rise Time .

Part

PJA3412

Description

N-Channel Enhancement Mode MOSFET



Feature


PPJA3412 20V N-Channel Enhancement Mode MOSFET Voltage 20 V Current 4.1A Features  RDS(ON) , VGS@4.5V, ID@4. 1A<56mΩ  RDS(ON) , VGS@2.5V, ID@2. 8A<68mΩ  RDS(ON) , VGS@1.8V, ID@1. 5A<95mΩ  Advanced Trench Process T echnology  Specially Designed for Sw itch Load, PWM Application, etc.  Le ad free in compliance with EU RoHS 2011 /65/EU directive.  Green molding co.
Manufacture

Pan Jit International

Datasheet
Download PJA3412 Datasheet




 PJA3412
PPJA3412
20V N-Channel Enhancement Mode MOSFET
Voltage
20 V
Current
4.1A
Features
RDS(ON) , VGS@4.5V, ID@4.1A<56m
RDS(ON) , VGS@2.5V, ID@2.8A<68m
RDS(ON) , VGS@1.8V, ID@1.5A<95m
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc.
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0003 ounces, 0.0084 grams
Marking: A12
SOT-23
Unit: inch(mm)
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
20
+12
4.1
16.4
1.25
10
-55~150
100
UNITS
V
V
A
A
W
mW/ oC
oC
oC/W
March 10,2014-REV.00
Page 1




 PJA3412
PPJA3412
Electrical Characteristics (TA=25oC unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
SYMBOL
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS
TEST CONDITION
VGS=0V, ID=250uA
VDS=VGS, ID=250uA
VGS=4.5V, ID=4.1A
VGS=2.5V, ID=2.8A
VGS=1.8V, ID=1.5A
VDS=20V, VGS=0V
VGS=+12V, VDS=0V
VDS=10V, ID=4.1A,
VGS=4.5V (Note 1,2)
VDS=10V, VGS=0V,
f=1.0MHZ
VDD=10V, ID=4.1A,
VGS=4.5V,
RG=6(Note 1,2)
---
Diode Forward Voltage
VSD IS=1.0A, VGS=0V
MIN. TYP. MAX. UNITS
20 -
-
0.4 0.66 1.2
- 41 56
V
V
- 50 68 m
- 66 95
- -0.01 1
uA
-
+10 +100
nA
- 4.6 -
- 0.8 -
-1-
- 350 -
- 40 -
- 29 -
nC
pF
-4-
- 47 -
ns
- 18 -
- 10 -
- - 1.5 A
-
0.75
1.2
V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RΘJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper
4. The maximum current rating is package limited
March 10,2014-REV.00
Page 2




 PJA3412
PPJA3412
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
March 10,2014-REV.00
Fig.6 Body Diode Characteristics
Page 3



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