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Mode MOSFET. PJA3413 Datasheet

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Mode MOSFET. PJA3413 Datasheet






PJA3413 MOSFET. Datasheet pdf. Equivalent




PJA3413 MOSFET. Datasheet pdf. Equivalent





Part

PJA3413

Description

P-Channel Enhancement Mode MOSFET



Feature


PPJA3413 20V P-Channel Enhancement Mode MOSFET Voltage -20 V Current -3.4A Features  RDS(ON) , VGS@-4.5V, ID@ -3.4A<82mΩ  RDS(ON) , VGS@-2.5V, I D@-2.2A<110mΩ  RDS(ON) , VGS@-1.8V , ID@-1.2A<146mΩ  Advanced Trench Process Technology  Specially Design ed for Switch Load, PWM Application, et c  Lead free in compliance with EU R oHS 2011/65/EU directive.  Green mo.
Manufacture

Pan Jit International

Datasheet
Download PJA3413 Datasheet


Pan Jit International PJA3413

PJA3413; lding compound as per IEC61249 Std. (Hal ogen Free) Mechanical Data  Case: SO T-23 Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx . Weight: 0.0003 ounces, 0.0084 grams Marking: A13 SOT-23 Unit: inch(mm) Maximum Ratings and Thermal Character istics (TA=25oC unless otherwise noted) PARAMETER Drain-Source Voltage Gate -Source Voltage Continuou.


Pan Jit International PJA3413

s Drain Current Pulsed Drain Current Po wer Dissipation Ta=25oC Derate above 2 5oC Operating Junction and Storage Tem perature Range Typical Thermal resista nce - Junction to Ambient (Note 3) SYM BOL VDS VGS ID IDM PD TJ,TSTG RθJA LI MIT -20 +12 -3.4 -13.6 1.25 10 -55~150 100 UNITS V V A A W mW/ oC oC oC/W Fe bruary 17,2014-REV.00 Page 1 PPJA3413 Electrical Charact.


Pan Jit International PJA3413

eristics (TA=25oC unless otherwise noted ) PARAMETER Static Drain-Source Breakd own Voltage Gate Threshold Voltage Drai n-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leaka ge Current Dynamic Total Gate Charge Ga te-Source Charge Gate-Drain Charge Inpu t Capacitance Output Capacitance Revers e Transfer Capacitance Switching Turn-O n Delay Time Turn-.

Part

PJA3413

Description

P-Channel Enhancement Mode MOSFET



Feature


PPJA3413 20V P-Channel Enhancement Mode MOSFET Voltage -20 V Current -3.4A Features  RDS(ON) , VGS@-4.5V, ID@ -3.4A<82mΩ  RDS(ON) , VGS@-2.5V, I D@-2.2A<110mΩ  RDS(ON) , VGS@-1.8V , ID@-1.2A<146mΩ  Advanced Trench Process Technology  Specially Design ed for Switch Load, PWM Application, et c  Lead free in compliance with EU R oHS 2011/65/EU directive.  Green mo.
Manufacture

Pan Jit International

Datasheet
Download PJA3413 Datasheet




 PJA3413
PPJA3413
20V P-Channel Enhancement Mode MOSFET
Voltage
-20 V Current
-3.4A
Features
RDS(ON) , VGS@-4.5V, ID@-3.4A<82m
RDS(ON) , VGS@-2.5V, ID@-2.2A<110m
RDS(ON) , VGS@-1.8V, ID@-1.2A<146m
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0003 ounces, 0.0084 grams
Marking: A13
SOT-23
Unit: inch(mm)
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
-20
+12
-3.4
-13.6
1.25
10
-55~150
100
UNITS
V
V
A
A
W
mW/ oC
oC
oC/W
February 17,2014-REV.00
Page 1




 PJA3413
PPJA3413
Electrical Characteristics (TA=25oC unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
SYMBOL
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS
TEST CONDITION
VGS=0V, ID=-250uA
VDS=VGS, ID=-250uA
VGS=-4.5V, ID=-3.4A
VGS=-2.5V, ID=-2.2A
VGS=-1.8V, ID=-1.2A
VDS=-20V, VGS=0V
VGS=+12V, VDS=0V
VDS=-10V, ID=-3.4A,
VGS=-4.5V (Note 1,2)
VDS=-10V, VGS=0V,
f=1.0MHZ
VDD=-10V, ID=-3.4A,
VGS=-4.5V,
RG=6(Note 1,2)
---
Diode Forward Voltage
VSD IS=-1.0A, VGS=0V
MIN. TYP. MAX. UNITS
-20 -
-
-0.4 -0.65 -1.2
- 65 82
V
V
- 82 110 m
- 103 146
-
0.01
-1
uA
-
+10 +100
nA
-7-
-1-
- 1.8 -
- 522 -
- 55 -
- 40 -
nC
pF
- 10 -
4 - ns
- 34 -
5
- - -1.5 A
- 0.77 -1.2 V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RΘJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper
4. The maximum current rating is package limited
February 17,2014-REV.00
Page 2




 PJA3413
PPJA3413
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
February 17,2014-REV.00
Fig.6 Body Diode Characteristics
Page 3



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