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Mode MOSFET. PJA3415A Datasheet

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Mode MOSFET. PJA3415A Datasheet






PJA3415A MOSFET. Datasheet pdf. Equivalent




PJA3415A MOSFET. Datasheet pdf. Equivalent





Part

PJA3415A

Description

P-Channel Enhancement Mode MOSFET



Feature


PPJA3415A 20V P-Channel Enhancement Mod e MOSFET Voltage -20 V Current -4.5A Features  RDS(ON) , VGS@-4.5V, ID @-4.5A<46mΩ  RDS(ON) , VGS@-2.5V, ID@-3.0A<56mΩ  RDS(ON) , VGS@-1.8V , ID@-1.5A<88mΩ  Advanced Trench P rocess Technology  Specially Designe d for Switch Load, PWM Application, etc  Lead free in compliance with EU Ro HS 2011/65/EU directive.  Green mol.
Manufacture

Pan Jit International

Datasheet
Download PJA3415A Datasheet


Pan Jit International PJA3415A

PJA3415A; ding compound as per IEC61249 Std. (Halo gen Free) Mechanical Data  Case: SO T-23 Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx . Weight: 0.0003 ounces, 0.0084 grams Marking: A5A SOT-23 Unit : inch(mm ) Maximum Ratings and Thermal Char acteristics o (TA=25 C unless otherw ise noted) PARAMETER Drain-Source Vo ltage Gate-Source Voltage .


Pan Jit International PJA3415A

Continuous Drain Current Pulsed Drain Cu rrent Power Dissipation Ta=25oC Derate above 25oC Operating Junction and Sto rage Temperature Range Typical Thermal resistance - Junction to Ambient (Note 3) SYMBOL VDS VGS ID IDM PD TJ,TSTG R θJA LIMIT -20 +12 -4.5 -18 1.25 10 -5 5~150 100 UNITS V V A A W mW/ oC oC oC /W July 7,2015-REV00 Page 1 PPJA3415 A Electrical Char.


Pan Jit International PJA3415A

acteristics o (TA=25 C unless otherwi se noted) PARAMETER Static Drain-Sour ce Breakdown Voltage Gate Threshold Vol tage Drain-Source On-State Resistance Z ero Gate Voltage Drain Current Gate-Sou rce Leakage Current Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Ch arge Input Capacitance Output Capacitan ce Reverse Transfer Capacitance Switchi ng Turn-On Delay T.

Part

PJA3415A

Description

P-Channel Enhancement Mode MOSFET



Feature


PPJA3415A 20V P-Channel Enhancement Mod e MOSFET Voltage -20 V Current -4.5A Features  RDS(ON) , VGS@-4.5V, ID @-4.5A<46mΩ  RDS(ON) , VGS@-2.5V, ID@-3.0A<56mΩ  RDS(ON) , VGS@-1.8V , ID@-1.5A<88mΩ  Advanced Trench P rocess Technology  Specially Designe d for Switch Load, PWM Application, etc  Lead free in compliance with EU Ro HS 2011/65/EU directive.  Green mol.
Manufacture

Pan Jit International

Datasheet
Download PJA3415A Datasheet




 PJA3415A
PPJA3415A
20V P-Channel Enhancement Mode MOSFET
Voltage
-20 V Current
-4.5A
Features
RDS(ON) , VGS@-4.5V, ID@-4.5A<46m
RDS(ON) , VGS@-2.5V, ID@-3.0A<56m
RDS(ON) , VGS@-1.8V, ID@-1.5A<88m
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0003 ounces, 0.0084 grams
Marking: A5A
SOT-23
Unit : inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
-20
+12
-4.5
-18
1.25
10
-55~150
100
UNITS
V
V
A
A
W
mW/ oC
oC
oC/W
July 7,2015-REV00
Page 1




 PJA3415A
PPJA3415A
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
SYMBOL
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS
TEST CONDITION
VGS=0V, ID=-250uA
VDS=VGS, ID=-250uA
VGS=-4.5V, ID=-4.5A
VGS=-2.5V, ID=-3.0A
VGS=-1.8V, ID=-1.5A
VDS=-16V, VGS=0V
VGS=+12V, VDS=0V
VDS=-10V, ID=-4.5A,
VGS=-4.5V (Note 1,2)
VDS=-10V, VGS=0V,
f=1.0MHZ
VDD=-10V, ID=-4.5A,
VGS=-4.5V,
RG=6Ω (Note 1,2)
---
Diode Forward Voltage
VSD IS=-1.0A, VGS=0V
MIN. TYP. MAX. UNITS
-20 -
-
-0.5 -0.74 -1.3
- 38 46
- 47 56
V
V
mΩ
- 68 88
-
-0.01
-1
uA
- +10 +100 nA
- 10 -
- 1.7 -
- 2.4 -
- 980 -
- 100 -
- 81 -
nC
pF
- 9.8 -
- 54 -
ns
- 44 -
- 31 -
- - -1.5 A
- -0.78 -1.2 V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper
4. The maximum current rating is package limited
July 7,2015-REV00
Page 2




 PJA3415A
PPJA3415A
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
July 7,2015-REV00
Fig.6 Body Diode Characteristics
Page 3



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